BSZ096N10LS5ATMA1

BSZ096N10LS5ATMA1
Mfr. #:
BSZ096N10LS5ATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MV POWER MOS
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSZ096N10LS5ATMA1 Деректер тізімі
Жеткізу:
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Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Tags
BSZ09, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R
***ark
MOSFET, N-CH, 100V, 40A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0082ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Бөлім № Mfg. Сипаттама Қор Бағасы
BSZ096N10LS5ATMA1
DISTI # V36:1790_16141101
Infineon Technologies AG100V N-Channel MOSFET0
  • 5000000:$0.6049
  • 2500000:$0.6052
  • 500000:$0.6346
  • 50000:$0.6880
  • 5000:$0.6970
BSZ096N10LS5ATMA1
DISTI # BSZ096N10LS5ATMA1-ND
Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.6970
BSZ096N10LS5ATMA1
DISTI # BSZ096N10LS5ATMA1
Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ096N10LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.6339
  • 30000:$0.6449
  • 20000:$0.6679
  • 10000:$0.6929
  • 5000:$0.7189
BSZ096N10LS5ATMA1
DISTI # SP001352994
Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001352994)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 50000:€0.5809
  • 30000:€0.6259
  • 20000:€0.6779
  • 10000:€0.7399
  • 5000:€0.9049
BSZ096N10LS5ATMA1
DISTI # 726-BSZ096N10LS5ATMA
Infineon Technologies AGMOSFET
RoHS: Compliant
12
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.0700
  • 500:$0.9490
  • 1000:$0.7490
  • 5000:$0.6640
  • 10000:$0.6390
Сурет Бөлім № Сипаттама
BSZ096N10LS5ATMA1

Mfr.#: BSZ096N10LS5ATMA1

OMO.#: OMO-BSZ096N10LS5ATMA1

MOSFET
BSZ096N10LS5

Mfr.#: BSZ096N10LS5

OMO.#: OMO-BSZ096N10LS5-1190

Жаңа және түпнұсқа
BSZ096N10LS5ATMA1

Mfr.#: BSZ096N10LS5ATMA1

OMO.#: OMO-BSZ096N10LS5ATMA1-INFINEON-TECHNOLOGIES

MV POWER MOS
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
2000
Саны енгізіңіз:
BSZ096N10LS5ATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,00 $
0,00 $
10
0,00 $
0,00 $
100
0,00 $
0,00 $
500
0,00 $
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1000
0,00 $
0,00 $
-ден бастаңыз
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