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FS75R12W2T4BOMA1

FS75R12W2T4BOMA1
Mfr. #:
FS75R12W2T4BOMA1
Өндіруші:
Infineon Technologies
Сипаттама:
Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FS75R12W2T4BOMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Tags
FS75R12W, FS75R12, FS75R1, FS75R, FS75, FS7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin EASY2B-1 Tray
***ment14 APAC
IGBT, L POWER, 1200V, 75A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:375W
***ineon
EasyPACK 2B 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 4; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups
***et Europe
Trans IGBT Module N-CH 1.2kV 50A nom 460W 7-Pin 94x34mm
*** Stop Electro
Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel
***trelec
IGBT module [Infineon] BSM 50GB 120DLC IGBT module
***p One Stop Global
Trans IGBT Module N-CH 1200V 78A 400000mW 7-Pin 34MM-1
*** Electronic Components
IGBT Modules 1200V 50A DUAL
***ronik
IGBT-MOD 1200V 78A HB 34mm
***trelec
IGBT Module 34 mm 1.2 kV
***ment14 APAC
IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:78A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:400W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:M34a; Current Ic Continuous a Max:50A; Current Temperature:80°C; Fall Time tf:100ns; Package / Case:Half Bridge 1; Power Dissipation Max:400W; Power Dissipation Pd:400W; Power Dissipation Pd:400W; Pulsed Current Icm:100A; Rise Time:100ns; Termination Type:Screw; Voltage Vces:1.2kV
***ical
Trans IGBT Module N-CH 1200V 75A 270000mW 28-Pin ECONO2-6 Tray
***nell
IGBT MODULE, 6 N-CH, 1.2KV, 75A, 270W; Transistor Polarity: Six N Channel; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 270W; Collector Emitter Voltage V(br)ceo: 1.2kV;
***trelec
IGBT module Connection: Soldering pins Fastening: 4 x M2 Configuration: 3-phasig Housing type: EconoPACK™2 Collector-emitter saturation voltage: 2.15 V Energy dissipation during make-time: 5 mJ Energy dissipation during turn-off time: 6.5 mJ
***ark
IGBT MOD, 1.2KV, 75A, 270W; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:270W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
EconoPACK 2 1200V sixpack IGBT module with IGBT3 and NTC | Summary of Features: High power density; Established Econo module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; induction; aircon
***ical
Trans IGBT Module N-CH 1200V 75A 270000mW 32-Pin Case SP-3 Tube
***ark
INSULATED GATE BIPOLAR TRANSISTOR, 75A I(C), 1200V V(BR)CES, N-CHANNEL ROHS COMPLIANT: YES
***rochip SCT
High Voltage Power Module, Dual boost chopper, 1200V, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
POWER MOD IGBT TRENCH BOOST SP3
*** Stop Electro
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
***el Electronic
Trans IGBT Module N-CH 1.2KV 75A 12-Pin Case SP-1
***rochip SCT
High Voltage Power Module, Phase leg, 1200V, RoHS
***ark
PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes
***ical
Trans IGBT Module N-CH 1200V 135A 568000mW 20-Pin Case SP-4
***i-Key
IGBT NPT BOOST CHOP 1200V SP4
***el Electronic
IGBT MODULE 1200V 135A 568W SP4
***hardson RFPD
POWER IGBT TRANSISTOR
Бөлім № Mfg. Сипаттама Қор Бағасы
FS75R12W2T4BOMA1
DISTI # V99:2348_18195639		Infineon Technologies AGTrans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray
RoHS: Compliant		12
  • 100:$67.5699
  • 25:$70.3800
  • 10:$73.6300
  • 1:$76.0600
FS75R12W2T4BOMA1
DISTI # FS75R12W2T4BOMA1-ND		Infineon Technologies AGMOD IGBT LOW PWR EASY2B-1
RoHS: Compliant
Min Qty: 15
Container: Tray		Temporarily Out of Stock
  • 15:$56.5627
FS75R12W2T4BOMA1
DISTI # 26763615		Infineon Technologies AGTrans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray
RoHS: Compliant		12
  • 100:$67.5699
  • 25:$70.3800
  • 10:$73.6300
  • 1:$76.0600
FS75R12W2T4BOMA1
DISTI # FS75R12W2T4BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: FS75R12W2T4BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
  • 150:$43.8900
  • 90:$44.9900
  • 60:$46.0900
  • 30:$47.2900
  • 15:$47.9900
FS75R12W2T4
DISTI # 641-FS75R12W2T4		Infineon Technologies AGIGBT Modules IGBT 1200V 75A
RoHS: Compliant		0
  • 1:$60.2000
  • 5:$58.8500
  • 10:$56.5600
  • 25:$54.7400
  • 50:$54.7300
  • 100:$50.7200
Сурет Бөлім № Сипаттама
FS75R12W2T4_B11

Mfr.#: FS75R12W2T4_B11

OMO.#: OMO-FS75R12W2T4-B11

 IGBT Modules IGBT 1200V 75A
FS75R12W2T4

Mfr.#: FS75R12W2T4

OMO.#: OMO-FS75R12W2T4

 IGBT Modules IGBT 1200V 75A
FS75R12W2T4B11BOMA1

Mfr.#: FS75R12W2T4B11BOMA1

OMO.#: OMO-FS75R12W2T4B11BOMA1-INFINEON-TECHNOLOGIES

 MOD IGBT LOW PWR EASY2B-2
FS75R12W2T4_B11

Mfr.#: FS75R12W2T4_B11

OMO.#: OMO-FS75R12W2T4-B11-125

 IGBT Modules IGBT 1200V 75A
FS75R12W2T4

Mfr.#: FS75R12W2T4

OMO.#: OMO-FS75R12W2T4-125

 IGBT Modules IGBT 1200V 75A
FS75R12W2T4BOMA1

Mfr.#: FS75R12W2T4BOMA1

OMO.#: OMO-FS75R12W2T4BOMA1-INFINEON-TECHNOLOGIES

 Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
5500
Саны енгізіңіз:
FS75R12W2T4BOMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
69,44 $
69,44 $
10
65,96 $
659,63 $
100
62,49 $
6 249,15 $
500
59,02 $
29 509,90 $
1000
55,55 $
55 548,00 $
-ден бастаңыз
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