SQJ912AEP-T1_GE3

SQJ912AEP-T1_GE3
Mfr. #:
SQJ912AEP-T1_GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 40V 30A 48W AEC-Q101 Qualified
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SQJ912AEP-T1_GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ912AEP-T1_GE3 DatasheetSQJ912AEP-T1_GE3 Datasheet (P4-P6)SQJ912AEP-T1_GE3 Datasheet (P7-P9)SQJ912AEP-T1_GE3 Datasheet (P10-P11)
ECAD Model:
Көбірек ақпарат:
SQJ912AEP-T1_GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PowerPAK-SO-8L-4
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
40 V
Идентификатор - үздіксіз төгу тогы:
30 A
Rds On - ағызу көзіне қарсылық:
7.7 mOhms, 7.7 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
38 nC, 38 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
48 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Біліктілік:
AEC-Q101
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Биіктігі:
1.04 mm
Ұзындығы:
6.15 mm
Серия:
SQ
Транзистор түрі:
2 N-Channel
Ені:
5.13 mm
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
58 S, 58 S
Күз уақыты:
11 ns, 11 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
9 ns, 9 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
23 ns, 23 ns
Қосудың әдеттегі кешігу уақыты:
10 ns, 10 ns
Бірлік салмағы:
0.017870 oz
Tags
SQJ912A, SQJ912, SQJ91, SQJ9, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SQJ912AEP Series 30 V 30 A Automotive Dual N-Channel Mosfet - PowerPAK® SO-8L
***ow.cn
Trans MOSFET N-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO
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MOSFET 2N-CH 40V 30A PPAK SO-8
***et
DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0077Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: No
***ure Electronics
Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
*** Source Electronics
MOSFET N-CH 40V 35A PPAK 1212-8 / Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R
***ment14 APAC
MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:17.6A; Power Dissipation Pd:3.8W; Voltage Vgs Max:20V
*** Source Electronics
Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK
***ark
Mosfet, P-Ch, 40V, 35A, To-252 Rohs Compliant: Yes |Diodes Inc. DMP4015SK3Q-13
***ure Electronics
DMP4015SK3Q Series 40 V 14 A P-Channel Enhancement Mode Mosfet - TO-252 (DPAK)
***nsix Microsemi
Power Field-Effect Transistor, 12A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***(Formerly Allied Electronics)
SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO
***ure Electronics
Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8
***nell
MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***ure Electronics
Single N-Channel 30 V 8.5 mOhm 14 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 15A, 8.5 MOHM, 9.3 NC QG, PQFN
***Yang
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 30V, 15A, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15mA; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
***ure Electronics
P-Channel 30 V 7.5 mOhm 126.2 nC SMT Enhancement Mode Mosfet - PowerDI
***ark
Mosfet, P-Ch, 30V, 36A, Powerdi 5060 Rohs Compliant: Yes |Diodes Inc. DMP3010LPSQ-13
***ical
Trans MOSFET P-CH 30V 36A Automotive 8-Pin PowerDI EP T/R
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***nsix Microsemi
Buffer/Inverter Based MOSFET Driver
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MOSFET P-CH 30V 36A PWRDI5060-8
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MOSFET, P-CH, 30V, 36A, POWERDI 5060;
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30 V, 35 A, 9 mOhm Single N-Channel Power MOSFET, SO-8FL
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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NTMFS4945NT3G, SINGLE MOSFETS;
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Бөлім № Mfg. Сипаттама Қор Бағасы
SQJ912AEP-T1-GE3
DISTI # V72:2272_09219249
Vishay IntertechnologiesDUAL N-CHANNEL 40-V (D-S) 175C
RoHS: Compliant
2986
  • 1000:$0.4635
  • 500:$0.6041
  • 250:$0.6645
  • 100:$0.7383
  • 25:$0.8634
  • 10:$1.0553
  • 1:$1.2733
SQJ912AEP-T1-GE3
DISTI # V36:1790_09219249
Vishay IntertechnologiesDUAL N-CHANNEL 40-V (D-S) 175C
RoHS: Compliant
0
  • 3000000:$0.4581
  • 1500000:$0.4583
  • 300000:$0.4708
  • 30000:$0.4907
  • 3000:$0.4939
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1_GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 40V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5345In Stock
  • 1000:$0.5451
  • 500:$0.6904
  • 100:$0.8358
  • 10:$1.0720
  • 1:$1.2000
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1_GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 40V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5345In Stock
  • 1000:$0.5451
  • 500:$0.6904
  • 100:$0.8358
  • 10:$1.0720
  • 1:$1.2000
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1_GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 40V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.4516
  • 6000:$0.4692
  • 3000:$0.4939
SQJ912AEP-T1-GE3
DISTI # 31686249
Vishay IntertechnologiesDUAL N-CHANNEL 40-V (D-S) 175C
RoHS: Compliant
2986
  • 14:$1.2733
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ912AEP-T1_GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 18000
  • 30000:$0.4148
  • 18000:$0.4253
  • 12000:$0.4364
  • 6000:$0.4480
  • 3000:$0.4603
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R (Alt: SQJ912AEP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.4609
  • 18000:€0.4819
  • 12000:€0.5449
  • 6000:€0.6719
  • 3000:€0.9369
SQJ912AEP-T1_GE3.
DISTI # 23AC9821
Vishay IntertechnologiesTransistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:48W,No. of Pins:8Pins RoHS Compliant: No18000
  • 30000:$0.4310
  • 18000:$0.4430
  • 12000:$0.4560
  • 6000:$0.4750
  • 1:$0.4890
SQJ912AEP-T1_GE3
DISTI # 78-SQJ912AEP-T1_GE3
Vishay IntertechnologiesMOSFET 40V 30A 48W AEC-Q101 Qualified
RoHS: Compliant
4187
  • 1:$1.1700
  • 10:$0.9670
  • 100:$0.7420
  • 500:$0.6380
  • 1000:$0.5030
  • 3000:$0.4700
  • 6000:$0.4460
  • 9000:$0.4370
SQJ912AEP-T1-GE3
DISTI # 78-SQJ912AEP-T1-GE3
Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
RoHS: Compliant
0
    SQJ912AEP-T1-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
    RoHS: Compliant
    Americas -
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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1986
      Саны енгізіңіз:
      SQJ912AEP-T1_GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      1,17 $
      1,17 $
      10
      0,97 $
      9,67 $
      100
      0,74 $
      74,20 $
      500
      0,64 $
      319,00 $
      1000
      0,50 $
      503,00 $
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