A2G35S200-01SR3

A2G35S200-01SR3
Mfr. #:
A2G35S200-01SR3
Өндіруші:
NXP / Freescale
Сипаттама:
RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
A2G35S200-01SR3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2G35S200-01SR3 DatasheetA2G35S200-01SR3 Datasheet (P4-P6)A2G35S200-01SR3 Datasheet (P7-P9)A2G35S200-01SR3 Datasheet (P10)
ECAD Model:
Көбірек ақпарат:
A2G35S200-01SR3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
MACOM
Өнім санаты:
РЖ күшейткіші
RoHS:
Y
Орнату стилі:
SMD/SMT
Пакет/қорап:
PQFN-20
Түрі:
2-Stage Amplifier
Жұмыс жиілігі:
2.5 GHz to 3.5 GHz
Табыс:
27 dB
Жұмыс кернеуі:
11 V
Операциялық жабдықтау тогы:
25 mA
Максималды жұмыс температурасы:
+ 85 C
Қаптама:
Ролик
Бренд:
MACOM
Өнім түрі:
РЖ күшейткіші
Зауыттық буманың саны:
500
Ішкі санат:
Сымсыз және радиожиілік интегралды схемалар
Tags
A2G3, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
AIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 40 W AVG., 48 V, REEL 13" Q1 NDP, TR
***W
RF Power Transistor,3400 to 3600 MHz, 180 W, Typ Gain in dB is 16.1 @ 3500 MHz, 48 V, GaN, SOT1828
***et
RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Бөлім № Mfg. Сипаттама Қор Бағасы
A2G35S200-01SR3
DISTI # 568-15206-1-ND
NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)
246In Stock
  • 10:$134.7860
  • 1:$141.4800
A2G35S200-01SR3
DISTI # 568-15206-6-ND
NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®
246In Stock
  • 10:$134.7860
  • 1:$141.4800
A2G35S200-01SR3
DISTI # 568-15206-2-ND
NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$123.4358
A2G35S200-01SR3
DISTI # 01AC8235
NXP SemiconductorsAIRFAST RF POWER GAN TRANSISTOR, 3400-3800 MHZ, 40 W AVG., 48 V0
  • 100:$116.0200
  • 50:$123.4400
  • 25:$125.3000
  • 10:$127.1500
  • 5:$130.8600
  • 1:$134.5800
A2G35S200-01SR3
DISTI # 841-A2G35S200-01SR3
NXP SemiconductorsRF Amplifier A2G35S200-01S/CFM2F///REEL 13 Q1 NDP
RoHS: Compliant
0
  • 250:$139.2100
Сурет Бөлім № Сипаттама
A2G35S200-01SR3

Mfr.#: A2G35S200-01SR3

OMO.#: OMO-A2G35S200-01SR3

RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 40 W AVG., 48 V
A2G35S200-01SR3

Mfr.#: A2G35S200-01SR3

OMO.#: OMO-A2G35S200-01SR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER GAN TRANSISTOR
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1000
Саны енгізіңіз:
A2G35S200-01SR3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
-ден бастаңыз
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