IRF9Z24NSPBF

Mfr. #:: IRF9Z24NSPBF
Өндіруші:: Infineon / IR
Сипаттама:: MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: IRF9Z24NSPBF Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF9Z24NSPBF Datasheet IRF9Z24NSPBF Datasheet (P4-P6)IRF9Z24NSPBF Datasheet (P7-P9)IRF9Z24NSPBF Datasheet (P10-P11)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Infineon

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: TO-252-3

Арналар саны:: 1 Channel

Транзистордың полярлығы:: P-арна

Vds - ағызу көзінің бұзылу кернеуі:: 55 V

Идентификатор - үздіксіз төгу тогы:: 12 A

Rds On - ағызу көзіне қарсылық:: 175 mOhms

Vgs - Шлюз көзі кернеуі:: 20 V

Qg - қақпа заряды:: 12.7 nC

Ең төменгі жұмыс температурасы:: - 55 C

Максималды жұмыс температурасы:: + 175 C

Pd - қуаттың шығыны:: 45 W

Конфигурация:: Бойдақ

Арна режимі:: Жақсарту

Қаптама:: Түтік

Биіктігі:: 2.3 mm

Ұзындығы:: 6.5 mm

Транзистор түрі:: 1 P-Channel

Түрі:: HEXFET Power MOSFET

Ені:: 6.22 mm

Бренд:: Infineon / IR

Күз уақыты:: 37 ns

Өнім түрі:: MOSFET

Көтеру уақыты:: 55 ns

Зауыттық буманың саны:: 1000

Ішкі санат:: MOSFETs

Өшірудің әдеттегі кешігу уақыты:: 23 ns

Қосудың әдеттегі кешігу уақыты:: 13 ns

Бөлім # Бүркеншік аттар:: SP001551706

Бірлік салмағы:: 0.139332 oz

Tags: IRF9Z24NS, IRF9Z24N, IRF9Z24, IRF9Z2, IRF9Z, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9Z24NSPBF Сипаттама

***ernational Rectifier: -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

***ical: Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK

***ied Electronics & Automation: MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK

***Components: MOSFET P-Channel 55V 12A D2PAK

***i-Key: MOSFET P-CH 55V 12A D2PAK

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-12A; On Resistance, Rds(on):175mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***nell: MOSFET, P, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:-4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:48A; External Depth:15.49mm; External Length / Height:4.69mm; Power Dissipation:45W; Power Dissipation on 1 Sq. PCB:3.8W; Power, Pd:45W; SMD Marking:F9Z24NS; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:55V; Width, External:10.54mm

***ment14 APAC: MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:55V; On Resistance Rds(on):175mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:-12A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:48A; SMD Marking:F9Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
IRF9Z24NSPBF DISTI # IRF9Z24NSPBF-ND	Infineon Technologies AG	MOSFET P-CH 55V 12A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF9Z24NSPBF DISTI # IRF9Z24NSPBF	Infineon Technologies AG	Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRF9Z24NSPBF) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 27
IRF9Z24NSPBF DISTI # 97K2242	Infineon Technologies AG	MOSFET Transistor, P Channel, 12 A, 55 V, 175 mohm, -10 V, -4 V RoHS Compliant: Yes	0
IRF9Z24NSPBF	International Rectifier	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	26	1000:$0.6100 500:$0.6400 100:$0.6600 25:$0.6900 1:$0.7500
IRF9Z24NSPBF DISTI # 942-IRF9Z24NSPBF	Infineon Technologies AG	MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC RoHS: Compliant	0
IRF9Z24NSPBF	International Rectifier		89	2:$2.6880 11:$1.7472 30:$1.3440
IRF9Z24NSPBF	International Rectifier		71	11:$1.8000 4:$2.4000 1:$3.6000
IRF9Z24NSPBF DISTI # 9103180	Infineon Technologies AG	MOSFET, P, D2-PAK RoHS: Compliant	0	1:$2.4300 10:$2.1700 100:$1.6900 500:$1.4000

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: IRF9Z24PBF OMO.#: OMO-IRF9Z24PBF	MOSFET P-CH -60V HEXFET MOSFET
	Mfr.#: IRF9Z24SPBF OMO.#: OMO-IRF9Z24SPBF-VISHAY	MOSFET P-CH 60V 11A D2PAK
	Mfr.#: IRF9Z24NPBF OMO.#: OMO-IRF9Z24NPBF-INFINEON-TECHNOLOGIES	MOSFET P-CH 55V 12A TO-220AB
	Mfr.#: IRF9Z24NPBF , 2SK1060-Z- OMO.#: OMO-IRF9Z24NPBF-2SK1060-Z--1190	Жаңа және түпнұсқа
	Mfr.#: IRF9Z24NPBF,F9Z24N,IRF9Z OMO.#: OMO-IRF9Z24NPBF-F9Z24N-IRF9Z-1190	Жаңа және түпнұсқа
	Mfr.#: IRF9Z24NPBF-MEX OMO.#: OMO-IRF9Z24NPBF-MEX-1190	Жаңа және түпнұсқа
	Mfr.#: IRF9Z24NS OMO.#: OMO-IRF9Z24NS-INFINEON-TECHNOLOGIES	MOSFET P-CH 55V 12A D2PAK
	Mfr.#: IRF9Z24NSTRR OMO.#: OMO-IRF9Z24NSTRR-INFINEON-TECHNOLOGIES	MOSFET P-CH 55V 12A D2PAK
	Mfr.#: IRF9Z24S OMO.#: OMO-IRF9Z24S-VISHAY	MOSFET P-CH 60V 11A D2PAK
	Mfr.#: IRF9Z24 OMO.#: OMO-IRF9Z24-VISHAY	MOSFET P-Chan 60V 11 Amp

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 1500
Саны енгізіңіз:

IRF9Z24NSPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

-ден бастаңыз

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IRF9Z24NSPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes