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SIE822DF-T1-E3

SIE822DF-T1-E3
Mfr. #:
SIE822DF-T1-E3
Өндіруші:
Vishay
Сипаттама:
RF Bipolar Transistors MOSFET 20V 50A 104W 3.4mohm @ 10V
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SIE822DF-T1-E3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
SIE822DF-T1-E3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Tags
SIE822, SIE82, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiE822DF Series N-Channel 20 V 0.0055 Ohm 104 W Surface Mount Mosfet - PolarPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:50000mA; On Resistance, Rds(on):0.0055ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:138A; Drain Source Voltage Vds:20V; On Resistance Rds(on):3.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:104W; Transistor Case Style:PolarPAK; SVHC:No SVHC (20-Jun-2011); Base Number:822; N-channel Gate Charge:24nC; On State Resistance @ Vgs = 4.5V:5.5mohm; On State resistance @ Vgs = 10V:3.4mohm; Package / Case:PolarPAK; Power Dissipation Pd:104W; Power Dissipation Pd:104mW; Pulse Current Idm:80A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Бөлім № Mfg. Сипаттама Қор Бағасы
SIE822DF-T1-E3
DISTI # SIE822DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 20V 50A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIE822DF-T1-E3
    DISTI # SIE822DF-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 31A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE822DF-T1-E3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$1.2900
    • 6000:$1.2900
    • 12000:$1.1900
    • 18000:$1.1900
    • 30000:$1.1900
    SIE822DF-T1-E3
    DISTI # 781-SIE822DF-T1-E3    		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PolarPAK
    RoHS: Compliant    		0
    • 1:$2.9600
    • 10:$2.4600
    • 100:$1.9000
    • 500:$1.6700
    • 1000:$1.6000
    • 3000:$1.5900
    SIE822DF-T1-E3
    DISTI # 1497646    		Vishay Intertechnologies 
    RoHS: Compliant    		0
    • 1:$4.6900
    • 10:$3.9000
    • 100:$3.0100
    • 500:$2.6500
    • 1000:$2.5400
    • 3000:$2.5200
    SIE822DF-T1-E3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PolarPAKAmericas -
      Сурет Бөлім № Сипаттама
      SIE822DF-T1-E3

      Mfr.#: SIE822DF-T1-E3

      OMO.#: OMO-SIE822DF-T1-E3

      		 MOSFET 20V Vds 20V Vgs PolarPAK
      SIE822DF-T1-GE3

      Mfr.#: SIE822DF-T1-GE3

      OMO.#: OMO-SIE822DF-T1-GE3

      		 MOSFET 20V Vds 20V Vgs PolarPAK
      SIE822DF-T1-E3

      Mfr.#: SIE822DF-T1-E3

      OMO.#: OMO-SIE822DF-T1-E3-VISHAY

      		 RF Bipolar Transistors MOSFET 20V 50A 104W 3.4mohm @ 10V
      SIE822DF-T1-GE3

      Mfr.#: SIE822DF-T1-GE3

      OMO.#: OMO-SIE822DF-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 20V 138A 104W 3.4mohm @ 10V
      SIE822DF-T1-E3CT

      Mfr.#: SIE822DF-T1-E3CT

      OMO.#: OMO-SIE822DF-T1-E3CT-1190

      		 Жаңа және түпнұсқа
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      2000
      Саны енгізіңіз:
      SIE822DF-T1-E3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      1,78 $
      1,78 $
      10
      1,70 $
      16,96 $
      100
      1,61 $
      160,65 $
      500
      1,52 $
      758,65 $
      1000
      1,43 $
      1 428,00 $
      2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
      -ден бастаңыз
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