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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| RF1S9540SM9A | HARTING Technology Group | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2718 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: RF1S9530 OMO.#: OMO-RF1S9530-1190 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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|
Mfr.#: RF1S9530SM OMO.#: OMO-RF1S9530SM-1190 |
Жаңа және түпнұсқа |
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|
Mfr.#: RF1S9540 OMO.#: OMO-RF1S9540-1190 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: RF1S9540SM OMO.#: OMO-RF1S9540SM-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: RF1S9540SM9A OMO.#: OMO-RF1S9540SM9A-1190 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |