We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SI9926BDY-T1-E3 DISTI # 70026129 | Vishay Siliconix | MOSFET,Dual,N-Channel,20V,8.2A,2W,SO-8 RoHS: Compliant | 0 |
|
| SI9926BDY-T1-E3 | Vishay Intertechnologies | 5470 | ||
| SI9926BDY-T1-E3 | Vishay Intertechnologies | 2132 | ||
| SI9926BDY-T1-E3 | Vishay Intertechnologies | 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 80 |
|
| SI9926BDY-T1-E3 | Vishay Siliconix | 6200 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1159 |
|
| SI9926BDYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2300 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SI9926BDY-T1-E3 OMO.#: OMO-SI9926BDY-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3 |
|
Mfr.#: SI9926BD OMO.#: OMO-SI9926BD-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI9926BDY OMO.#: OMO-SI9926BDY-1190 |
MOSFET NCH DUAL MOSFET 2.5V (G-S) |
|
|
Mfr.#: SI9926BDY-T1 OMO.#: OMO-SI9926BDY-T1-1190 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: SI9926BDY-T1-E3 OMO.#: OMO-SI9926BDY-T1-E3-VISHAY |
MOSFET 2N-CH 20V 6.2A 8-SOIC |
|
|
Mfr.#: SI9926BDY-T1-E3. OMO.#: OMO-SI9926BDY-T1-E3--1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI9926BDY-T1-GE3 OMO.#: OMO-SI9926BDY-T1-GE3-VISHAY |
MOSFET 2N-CH 20V 6.2A 8-SOIC |
|
|
Mfr.#: SI9926BDYT1E3 OMO.#: OMO-SI9926BDYT1E3-1190 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |