SCT30N120

SCT30N120
Mfr. #:
SCT30N120
Өндіруші:
STMicroelectronics
Сипаттама:
MOSFET N-CH 1200V 45A HIP247
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SCT30N120 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
SCT30N120 Көбірек ақпарат SCT30N120 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші
ST
Өнім санаты
FETs - жалғыз
Сериялар
SiC MOSFET
Қаптама
Түтік
Бірлік-салмағы
1.340411 oz
Монтаждау стилі
Тесік арқылы
Пакет-қорап
TO-247-3
Технология
SiC
Жұмыс температурасы
-55°C ~ 200°C (TJ)
Монтаждау түрі
Тесік арқылы
Арналар саны
1 Channel
Жабдықтаушы-құрылғы-пакет
HiP247
Конфигурация
Бойдақ
FET түрі
MOSFET N-арнасы, металл оксиді
Қуат – Макс
270W
Транзистор түрі
1 N-Channel
Ағызу-көзге-кернеу-Vdss
1200V (1.2kV)
Кіріс-сыйымдылық-Ciss-Vds
1700pF @ 400V
FET мүмкіндігі
Кремний карбиді (SiC)
Ағымдағы-Үздіксіз-ағызу-Id-25°C
40A (Tc)
Rds-On-Max-Id-Vgs
100 mOhm @ 20A, 20V
Vgs-th-Max-Id
2.6V @ 1mA (Typ)
Gate-Charge-Qg-Vgs
105nC @ 20V
Pd-қуат-диссипация
270 W
Максималды-жұмыс температурасы
+ 200 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
28 ns
Көтерілу уақыты
20 ns
Vgs-қақпа-көзі-кернеу
- 10 V/+ 25 V
Id-үздіксіз-ағызу-ток
45 A
Vds-ағызу-көз-бұзу-кернеу
1200 V
Vgs-th-Gate-Көзі-Табалдырық-кернеу
2.6 V
Rds-On-Drain-Source-Resistance
80 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
45 ns
Әдеттегі-қосу-кешігу-уақыты
19 ns
Qg-Gate-Заряд
105 nC
Tags
SCT30N, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
***ure Electronics
Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
***ark
Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.08Ohm; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes
SCT30N120 Silicon Carbide Power MOSFET
STMicroelectronics SCT30N120 Silicon Carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device's housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
Бөлім № Mfg. Сипаттама Қор Бағасы
SCT30N120
DISTI # 32450096
STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
RoHS: Compliant
780
  • 250:$27.0900
  • 100:$27.4860
  • 50:$27.9270
  • 30:$28.6830
SCT30N120
DISTI # 497-14960-ND
STMicroelectronicsMOSFET N-CH 1200V 45A HIP247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 120:$25.8818
  • 30:$28.6340
  • 1:$32.1500
SCT30N120
DISTI # V99:2348_17706747
STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
RoHS: Compliant
0
    SCT30N120
    DISTI # V36:1790_06556385
    STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube
    RoHS: Compliant
    0
      SCT30N120D2
      DISTI # V36:1790_17718182
      STMicroelectronicsSCT30N120D20
        SCT30N120
        DISTI # SCT30N120
        STMicroelectronicsTrans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120)
        RoHS: Compliant
        Min Qty: 1
        Container: Tube
        Europe - 0
        • 1:€36.3900
        • 5:€30.1500
        • 10:€27.0300
        • 50:€24.9500
        • 100:€23.2900
        SCT30N120
        DISTI # SCT30N120
        STMicroelectronicsTrans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120)
        RoHS: Compliant
        Min Qty: 600
        Container: Tube
        Asia - 0
        • 600:$19.6667
        • 1200:$18.7302
        • 1800:$17.8788
        • 3000:$17.1014
        • 6000:$16.3889
        • 15000:$15.9459
        • 30000:$15.5263
        SCT30N120D2
        DISTI # SCT30N120D2
        STMicroelectronicsSTMSCT30N120D2 (Alt: SCT30N120D2)
        RoHS: Compliant
        Min Qty: 1
        Europe - 0
        • 1:€19.1900
        • 10:€17.6900
        • 25:€16.7900
        • 50:€16.2900
        • 100:€16.1900
        • 500:€15.9900
        • 1000:€15.7900
        SCT30N120
        DISTI # 94X2608
        STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes0
        • 250:$29.0400
        • 100:$29.4700
        • 50:$29.9500
        • 25:$30.7600
        • 10:$31.6600
        • 5:$32.6700
        • 1:$33.7200
        SCT30N120D2
        DISTI # 65AC6290
        STMicroelectronicsPTD WBG & POWER RF0
        • 1:$14.7500
        SCT30N120H
        DISTI # 59AC7247
        STMicroelectronicsPTD WBG & POWER RF0
        • 1:$14.7500
        SCT30N120STMicroelectronicsSingle N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
        RoHS: Compliant
        1114Tube
        • 1:$25.4800
        • 5:$23.9200
        • 25:$22.4500
        SCT30N120
        DISTI # 511-SCT30N120
        STMicroelectronicsMOSFET 1200V silicon carbide MOSFET
        RoHS: Compliant
        0
        • 1:$26.8200
        • 5:$26.5400
        • 10:$24.7400
        • 25:$23.6300
        • 100:$21.1200
        • 250:$20.1500
        SCT30N120D2
        DISTI # 511-SCT30N120D2
        STMicroelectronicsMOSFET0
        • 490:$17.1100
        SCT30N120H
        DISTI # 511-SCT30N120H
        STMicroelectronicsMOSFET0
        • 1000:$14.1700
        SCT30N120
        DISTI # TMOSP11114
        STMicroelectronicsSiC-N 1200V 45A 80mOhm HiP247-3Stock DE - 0Stock HK - 0Stock US - 0
        • 600:$34.5300
        SCT30N120H
        DISTI # TMOS2202
        STMicroelectronicsSiC-N 1200V 45A 80mOhm H2PAK-2Stock DE - 0Stock HK - 0Stock US - 0
        • 1000:$18.8700
        SCT30N120
        DISTI # 2451116
        STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3
        RoHS: Compliant
        0
        • 100:£20.4000
        • 50:£20.6200
        • 10:£20.8500
        • 5:£21.0700
        • 1:£21.2900
        SCT30N120
        DISTI # XSFP00000005955
        STMicroelectronicsPower Field-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET
        RoHS: Compliant
        1802 in Stock0 on Order
        • 1802:$46.3300
        • 30:$50.9600
        SCT30N120
        DISTI # 2451116
        STMicroelectronicsMOSFET, N CH, 1.2KV, 40A, HIP247-3
        RoHS: Compliant
        0
        • 10:$37.2800
        • 5:$40.0000
        • 1:$40.4200
        Сурет Бөлім № Сипаттама
        SCT3022KLGC11

        Mfr.#: SCT3022KLGC11

        OMO.#: OMO-SCT3022KLGC11

        MOSFET Nch 1200V 95A SiC TO-247N
        SCT3060ALHRC11

        Mfr.#: SCT3060ALHRC11

        OMO.#: OMO-SCT3060ALHRC11

        MOSFET 650V 39A 165W SIC 60mOhm TO-247N
        SCT3105KLHRC11

        Mfr.#: SCT3105KLHRC11

        OMO.#: OMO-SCT3105KLHRC11

        MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
        SCT3030ALGC11

        Mfr.#: SCT3030ALGC11

        OMO.#: OMO-SCT3030ALGC11

        MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
        SCT3017ALGC11

        Mfr.#: SCT3017ALGC11

        OMO.#: OMO-SCT3017ALGC11-1190

        MOSFET, N-CH, 650V, 118A, 175DEG C, 427W, Transistor Polarity:N Channel, Continuous Drain Current Id:118A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.017ohm, Rds(on) Test Voltage Vgs:
        SCT3080KLGC11

        Mfr.#: SCT3080KLGC11

        OMO.#: OMO-SCT3080KLGC11-ROHM-SEMI

        MOSFET NCH 1.2KV 31A TO247N
        SCT3-32.768KHZ

        Mfr.#: SCT3-32.768KHZ

        OMO.#: OMO-SCT3-32-768KHZ-1190

        Жаңа және түпнұсқа
        SCT3604

        Mfr.#: SCT3604

        OMO.#: OMO-SCT3604-1190

        Жаңа және түпнұсқа
        SCT38318PG06

        Mfr.#: SCT38318PG06

        OMO.#: OMO-SCT38318PG06-1190

        Жаңа және түпнұсқа
        SCT3040KLHRC11

        Mfr.#: SCT3040KLHRC11

        OMO.#: OMO-SCT3040KLHRC11-ROHM-SEMI

        AUTOMOTIVE GRADE N-CHANNEL SIC P
        Қол жетімділік
        Қор:
        Available
        Тапсырыс бойынша:
        5000
        Саны енгізіңіз:
        SCT30N120 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
        Анықтамалық баға (USD)
        Саны
        Тауар өлшемінің бағасы
        Қосымша. Бағасы
        1
        23,29 $
        23,29 $
        10
        22,12 $
        221,25 $
        100
        20,96 $
        2 096,05 $
        500
        19,80 $
        9 898,05 $
        1000
        18,63 $
        18 631,60 $
        -ден бастаңыз
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