IXFR200N10P

IXFR200N10P
Mfr. #:
IXFR200N10P
Өндіруші:
Littelfuse
Сипаттама:
MOSFET 133 Amps 100V 0.0075 Rds
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IXFR200N10P Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR200N10P DatasheetIXFR200N10P Datasheet (P4-P5)
ECAD Model:
Көбірек ақпарат:
IXFR200N10P Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
IXYS
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-247-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
133 A
Rds On - ағызу көзіне қарсылық:
9 mOhms
Vgs th - Gate-Source шекті кернеуі:
5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
235 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
300 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
HiPerFET
Қаптама:
Түтік
Биіктігі:
21.34 mm
Ұзындығы:
16.13 mm
Серия:
IXFR200N10
Транзистор түрі:
1 N-Channel
Түрі:
Polar HiPerFET Power MOSFET
Ені:
5.21 mm
Бренд:
IXYS
Форвард өткізгіштік - Мин:
60 S
Күз уақыты:
90 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
35 ns
Зауыттық буманың саны:
30
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
150 ns
Қосудың әдеттегі кешігу уақыты:
30 ns
Бірлік салмағы:
0.056438 oz
Tags
IXFR20, IXFR2, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    W***a
    W***a
    IT

    All OK!!!!

    2019-04-06
    E**h
    E**h
    NZ

    Quick, Awesome, Many Thanks

    2019-05-06
    J***z
    J***z
    ES

    As described. We have to try.

    2019-01-21
    E***l
    E***l
    TR

    I haven't yet tried it because my arduino hasn't arrived yet.But the product looks good quality and nice.

    2019-01-24
***ark
MOSFET Transistor, N Channel, 133 A, 100 V, 9 mohm, 15 V, 5 V RoHS Compliant: Yes
***ure Electronics
Single N-Channel 100 V 300 W 235 nC Through Hole Power Mosfet - ISOPLUS247
***nell
MOSFET, N, ISOPLUS247; Transistor Polarity: N Channel; Continuous Drain Current Id: 133A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 5V; Power Dissipa
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
***ure Electronics
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 100V 130A 7mΩ 175°C TO-220 IRFB4310PBF
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 100V, 140A, 10mΩ, TO-3P
***nell
MOSFET, N-CH, 100V, 140A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 140A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB
*** Source Electronics
MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
***roFlash
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***icroelectronics
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 100 V 10.5 mO STripFET™ II MosFet - TO-220
***enic
100V 110A 312W 10.5m´Î@10V60A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***(Formerly Allied Electronics)
MOSFET N-Ch 100V 110A UltraFET II TO220
***r Electronics
Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 312W
***ark
MOSFET Transistor, N Channel, 60 A, 100 V, 9 mohm, 10 V, 4 V RoHS Compliant: Yes
***icroelectronics
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.009Ohm;ID 110A;TO-247;PD 312W;VGS +/-20V
***ure Electronics
N-Channel 100 V 0.0105 O Flange Mount STripFET™ II MOSFET - TO-247
***nell
MOSFET, N CH, 100V, 120A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
***r Electronics
Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Бөлім № Mfg. Сипаттама Қор Бағасы
IXFR200N10P
DISTI # IXFR200N10P-ND
IXYS CorporationMOSFET N-CH 100V 133A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Box
Temporarily Out of Stock
  • 30:$11.7623
IXFR200N10P
DISTI # 747-IXFR200N10P
IXYS CorporationMOSFET 133 Amps 100V 0.0075 Rds
RoHS: Compliant
147
  • 1:$14.6200
  • 10:$13.2900
  • 25:$12.2900
  • 50:$11.3100
  • 100:$11.0400
  • 250:$10.1200
  • 500:$9.1800
IXFR200N10P
DISTI # 1300096
IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant
5
  • 1:£14.4800
  • 5:£13.9500
  • 10:£11.5000
IXFR200N10P
DISTI # 1300096
IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant
5
  • 1:$23.1400
  • 10:$21.0400
  • 25:$19.4500
  • 50:$17.9000
  • 100:$17.4800
  • 250:$16.0200
  • 500:$14.5300
  • 1000:$13.2700
Сурет Бөлім № Сипаттама
IXFR26N120P

Mfr.#: IXFR26N120P

OMO.#: OMO-IXFR26N120P

MOSFET 32 Amps 1200V 0.46 Rds
IXFR24N50

Mfr.#: IXFR24N50

OMO.#: OMO-IXFR24N50

MOSFET 22 Amps 500V 0.23 Rds
IXFR26N100P

Mfr.#: IXFR26N100P

OMO.#: OMO-IXFR26N100P

MOSFET 26 Amps 1000V 0.39 Rds
IXFR24N100Q3

Mfr.#: IXFR24N100Q3

OMO.#: OMO-IXFR24N100Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFR20N120P

Mfr.#: IXFR20N120P

OMO.#: OMO-IXFR20N120P

MOSFET 26 Amps 1200V 1 Rds
IXFR24N90P

Mfr.#: IXFR24N90P

OMO.#: OMO-IXFR24N90P

MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFR20N80Q

Mfr.#: IXFR20N80Q

OMO.#: OMO-IXFR20N80Q-IXYS-CORPORATION

MOSFET N-CH ISOPLUS247
IXFR21N100Q

Mfr.#: IXFR21N100Q

OMO.#: OMO-IXFR21N100Q-IXYS-CORPORATION

MOSFET N-CH 1KV 18A ISOPLUS247
IXFR26N50Q

Mfr.#: IXFR26N50Q

OMO.#: OMO-IXFR26N50Q-IXYS-CORPORATION

MOSFET 24 Amps 500V 0.2 Rds
IXFR20N80P

Mfr.#: IXFR20N80P

OMO.#: OMO-IXFR20N80P-IXYS-CORPORATION

MOSFET 10 Amps 800V 0.5 Rds
Қол жетімділік
Қор:
72
Тапсырыс бойынша:
2055
Саны енгізіңіз:
IXFR200N10P ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
14,62 $
14,62 $
10
13,29 $
132,90 $
25
12,29 $
307,25 $
50
11,31 $
565,50 $
100
11,04 $
1 104,00 $
250
10,12 $
2 530,00 $
500
9,18 $
4 590,00 $
1000
8,38 $
8 380,00 $
-ден бастаңыз
Ең жаңа өнімдер
Top