STGFW30H65FB

STGFW30H65FB
Mfr. #:
STGFW30H65FB
Өндіруші:
STMicroelectronics
Сипаттама:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STGFW30H65FB Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STGFW30H65FB Көбірек ақпарат STGFW30H65FB Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
IGBT транзисторлары
RoHS:
Y
Технология:
Си
Пакет/қорап:
TO-3PF
Орнату стилі:
Тесік арқылы
Конфигурация:
Бойдақ
Коллектор-эмиттер кернеуі VCEO Max:
650 V
Коллектор-эмиттер қанығу кернеуі:
1.55 V
Шықпа эмитентінің максималды кернеуі:
20 V
Үздіксіз коллектор тогы 25 С:
60 A
Pd - қуаттың шығыны:
58 W
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Серия:
STGFW30H65FB
Қаптама:
Түтік
Үздіксіз коллектор ток Ic макс:
30 A
Бренд:
STMicroelectronics
Шлюз-эмиттер ағып кету тогы:
250 nA
Өнім түрі:
IGBT транзисторлары
Зауыттық буманың саны:
300
Ішкі санат:
IGBT
Бірлік салмағы:
0.245577 oz
Tags
STGFW30, STGFW3, STGFW, STGF, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***S
French Electronic Distributor since 1988
***ure Electronics
STGP30M65DF2: 650 V 60 A 258 W Trench Gate Field-Stop IGBT - TO-220AB
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-220AB Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins
***nell
IGBT, SINGLE, 650V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube
***ark
Transistor, Igbt, 600V, 60A, To-3P Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
***(Formerly Allied Electronics)
IGBT 600V 30A Trench Field-Stop TO-3P
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***-Wing Technology
Tube Through Hole ROHS3Compliant IGBT Transistor 2V @ 15V 24A 60A 250W 170ns
***nell
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***ark
IGBT, SINGLE, 650V, 60A, TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***S
French Electronic Distributor since 1988
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Бөлім № Mfg. Сипаттама Қор Бағасы
STGFW30H65FB
DISTI # 497-15123-5-ND
STMicroelectronicsIGBT 650V 60A 58W TO3PF
RoHS: Compliant
Min Qty: 1
Container: Tube
291In Stock
  • 1020:$1.8081
  • 510:$2.1439
  • 120:$2.5184
  • 30:$2.9060
  • 1:$3.4200
STGFW30H65FB
DISTI # STGFW30H65FB
STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PF Tube - Rail/Tube (Alt: STGFW30H65FB)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 600:$1.7900
  • 1200:$1.6900
  • 1800:$1.5900
  • 3000:$1.5900
  • 6000:$1.4900
STGFW30H65FB
DISTI # STGFW30H65FB
STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PF Tube (Alt: STGFW30H65FB)
RoHS: Compliant
Min Qty: 30
Container: Tube
Europe - 0
  • 30:€1.6900
  • 60:€1.6900
  • 120:€1.5900
  • 180:€1.4900
  • 300:€1.3900
STGFW30H65FB
DISTI # 511-STGFW30H65FB
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
RoHS: Compliant
0
  • 600:$2.0400
  • 1200:$1.7200
  • 3000:$1.6300
STGFW30H65FBSTMicroelectronics 300
    STGFW30H65FB
    DISTI # IGBT1872
    STMicroelectronicsIGBT 650V 30A TO-3PFStock DE - 0Stock HK - 0Stock US - 0
    • 600:$1.8200
    STGFW30H65FBSTMicroelectronicsInsulated Gate Bipolar Transistor
    RoHS: Compliant
    Europe - 600
      Сурет Бөлім № Сипаттама
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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      4000
      Саны енгізіңіз:
      STGFW30H65FB ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      600
      2,04 $
      1 224,00 $
      1200
      1,72 $
      2 064,00 $
      2700
      1,63 $
      4 401,00 $
      5100
      1,57 $
      8 007,00 $
      -ден бастаңыз
      Ең жаңа өнімдер
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