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FDMC86340ET80

FDMC86340ET80
Mfr. #:
FDMC86340ET80
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET FET 80V 6.5 MOHM PQFN33
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FDMC86340ET80 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
FDMC86340ET80 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
Power-33-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
80 V
Идентификатор - үздіксіз төгу тогы:
48 A
Rds On - ағызу көзіне қарсылық:
8.5 mOhms
Vgs th - Gate-Source шекті кернеуі:
2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
31 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
54 W
Конфигурация:
Бойдақ
Сауда атауы:
PowerTrench қуат клипі
Қаптама:
Ролик
Биіктігі:
0.8 mm
Ұзындығы:
3.3 mm
Серия:
FDMC86340ET80
Транзистор түрі:
1 N-Channel
Ені:
3.3 mm
Бренд:
ON Semiconductor / Fairchild
Форвард өткізгіштік - Мин:
36 S
Күз уақыты:
5.1 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
7.9 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
23 ns
Қосудың әдеттегі кешігу уақыты:
20 ns
Бірлік салмағы:
0.005386 oz
Tags
FDMC863, FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
***emi
N-Channel Shielded Gate Power Trench® MOSFET 80V, 68A, 6.5mΩ
***Yang
Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 68A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
***ical
Trans MOSFET N-CH 80V 82A Automotive 8-Pin TDSON EP T/R
***ark
MOSFET, N-CH, 80V, 82A, TDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:82A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:- RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, 82A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 82A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 74W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***ineon SCT
Trans MOSFET N-CH 80V 74A Automotive 8-Pin TDSON EP T/R, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 80V, 74A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 74A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***ure Electronics
N-Channel 80 V 6.2 mOhm 69.4 W SMT TrenchFET Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) PowerPAK SO EP T/R
***nell
MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:5; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ical
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 80V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***ure Electronics
N-Channel 80 V 8.9 mOhm 83 W SMT TrenchFET Power Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 80V 60A 8-Pin PowerPAK SO EP T/R
***et
N-CHANNEL 80-V (D-S) POWERPAK SO-8 THUNDERFET MOSFET, 6.3 MO
***ark
MOSFET, N-CH, 80V, 60A, POWERPAKSO-8
***nell
MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***et Europe
Trans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO T/R
***mal
N-Channel 80V PowerPak SO-8 ThunderFET MOSFET 5.5m
***el Electronic
B RAM 512 x 12 Bit EPROM 8-Bit CMOS Microcontroller - SOIC-8
***enic
80V 60A 6.25W 5.5m´Î@10V20A 2.8V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
***ure Electronics
N Chan, 80V, 60a, 5.5 mOhms @ 10V, PowerPAK® SO-8
***nell
MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***S
French Electronic Distributor since 1988
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Бөлім № Mfg. Сипаттама Қор Бағасы
FDMC86340ET80
DISTI # V72:2272_06337926		ON SemiconductorPT7 N-CH 80/20V POWER TRENCH M2044
  • 1000:$1.1908
  • 500:$1.2034
  • 250:$1.3867
  • 100:$1.4011
  • 25:$1.7629
  • 10:$1.7807
  • 1:$2.3234
FDMC86340ET80
DISTI # V36:1790_06337926		ON SemiconductorPT7 N-CH 80/20V POWER TRENCH M0
  • 3000000:$0.8808
  • 1500000:$0.8820
  • 300000:$0.9384
  • 30000:$1.0180
  • 3000:$1.0300
FDMC86340ET80
DISTI # FDMC86340ET80CT-ND		ON SemiconductorMOSFET N-CH 80V 48A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMC86340ET80
    DISTI # FDMC86340ET80DKR-ND    		ON SemiconductorMOSFET N-CH 80V 48A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMC86340ET80
      DISTI # FDMC86340ET80TR-ND      		ON SemiconductorMOSFET N-CH 80V 48A POWER33
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$1.0301
      FDMC86340ET80
      DISTI # 31339539      		ON SemiconductorPT7 N-CH 80/20V POWER TRENCH M1944
      • 7:$2.3234
      FDMC86340ET80
      DISTI # FDMC86340ET80      		ON SemiconductorTrans MOSFET N-CH 80V 14A 8-Pin PQFN T/R (Alt: FDMC86340ET80)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.9569
      • 18000:€1.0029
      • 12000:€1.1039
      • 6000:€1.2919
      • 3000:€1.5789
      FDMC86340ET80
      DISTI # FDMC86340ET80      		ON SemiconductorTrans MOSFET N-CH 80V 14A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMC86340ET80)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.8969
      • 18000:$0.9189
      • 12000:$0.9309
      • 6000:$0.9429
      • 3000:$0.9489
      FDMC86340ET80
      DISTI # 512-FDMC86340ET80      		ON SemiconductorMOSFET FET 80V 6.5 MOHM PQFN33
      RoHS: Compliant      		1040
      • 1:$2.1300
      • 10:$1.8100
      • 100:$1.4500
      • 500:$1.2700
      • 1000:$1.0500
      • 3000:$0.9820
      • 6000:$0.9450
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      Қол жетімділік
      Қор:
      983
      Тапсырыс бойынша:
      2966
      Саны енгізіңіз:
      FDMC86340ET80 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      2,13 $
      2,13 $
      10
      1,81 $
      18,10 $
      100
      1,45 $
      145,00 $
      500
      1,27 $
      635,00 $
      1000
      1,05 $
      1 050,00 $
      -ден бастаңыз
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