We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SIR892DP-T1-GE3 DISTI # SIR892DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 25V 50A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIR892DP-T1-GE3 DISTI # SIR892DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 25V 50A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SIR892DP-T1-GE3 DISTI # SIR892DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 25V 50A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SIR892DP-T1-GE3 DISTI # 16P3665 | Vishay Intertechnologies | N CHANNEL MOSFET, 25V, 50A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes RoHS: Compliant | 0 | |
| SIR892DP-T1-GE3 DISTI # 85W8935 | Vishay Intertechnologies | N CHANNEL MOSFET, 25V, 50A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SIR872DP-T1-GE3 OMO.#: OMO-SIR872DP-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 150V 18mOhm@10V 60A N-Ch |
|
Mfr.#: SIR882ADP-T1-GE3-CUT TAPE |
Жаңа және түпнұсқа |
|
|
Mfr.#: SIR81004F00A1 OMO.#: OMO-SIR81004F00A1-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SIR818DP-T1-E3 OMO.#: OMO-SIR818DP-T1-E3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SIR846ADP-T1-GE3 OMO.#: OMO-SIR846ADP-T1-GE3-VISHAY |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
|
Mfr.#: SIR862DP-T1-E3 OMO.#: OMO-SIR862DP-T1-E3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SIR866DPT1GE3 OMO.#: OMO-SIR866DPT1GE3-1190 |
Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: SIR888DP OMO.#: OMO-SIR888DP-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SIR890DP-T1-GE3 OMO.#: OMO-SIR890DP-T1-GE3-VISHAY |
MOSFET N-CH 20V 50A PPAK SO-8 |
|
|
Mfr.#: SIR800ADP-T1-RE3 OMO.#: OMO-SIR800ADP-T1-RE3-VISHAY |
MOSFET N-CH 20V POWERPAK SO8 SNG |