SI2316DS-T1-GE3

Mfr. #:: SI2316DS-T1-GE3
Өндіруші:: Vishay / Siliconix
Сипаттама:: MOSFET 30V 3.4A 0.96W 50mohm @ 10V
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: SI2316DS-T1-GE3 Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2316DS-T1-GE3 Datasheet SI2316DS-T1-GE3 Datasheet (P4-P6)SI2316DS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Көбірек ақпарат:: SI2316DS-T1-GE3 Көбірек ақпарат

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Вишай

Өнім санаты:: MOSFET

RoHS:: Y

Технология:: Си

Сауда атауы:: TrenchFET

Қаптама:: Ролик

Серия:: SI2

Бренд:: Вишай / Силиконикс

Өнім түрі:: MOSFET

Зауыттық буманың саны:: 3000

Ішкі санат:: MOSFETs

Бөлім # Бүркеншік аттар:: SI2316DS-GE3

Бірлік салмағы:: 0.000282 oz

Tags: SI2316D, SI2316, SI231, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2316DS-T1-GE3 Сипаттама

***et Europe: Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R

***i-Key: MOSFET N-CH 30V 2.9A SOT23-3

***: N-CHANNEL 30-V (D-S) MOSFET

***ark: N CHANNEL MOSFET, 30V, 3.4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.4A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:0.8V ;RoHS Compliant: Yes

SI2316DS-T1-GE3 Көбірек ақпарат

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
SI2316DS-T1-GE3 DISTI # V36:1790_09216801	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000000:$0.2454 1500000:$0.2456 300000:$0.2511 30000:$0.2588 3000:$0.2600
SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3-ND	Vishay Siliconix	MOSFET N-CH 30V 2.9A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.2741
SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (Alt: SI2316DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2599 18000:€0.2789 12000:€0.3019 6000:€0.3509 3000:€0.5149
SI2316DS-T1-GE3 DISTI # SI2316DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2299 18000:$0.2369 12000:$0.2429 6000:$0.2539 3000:$0.2619
SI2316DS-T1-GE3 DISTI # 12R3248	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW RoHS Compliant: Yes	0	2500:$0.3100 1000:$0.3910 500:$0.4450 250:$0.5190 100:$0.5840 50:$0.6590 25:$0.7240 1:$0.8070
SI2316DS-T1-GE3 DISTI # 781-SI2316DS-GE3	Vishay Intertechnologies	MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant	0	3000:$0.2600 6000:$0.2430 9000:$0.2340
SI2316DS-T1-GE3	Vishay Intertechnologies		2629
SI2316DS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 3.4A 0.96W 50mohm @ 10V RoHS: Compliant	Americas -

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: SI2316DS-T1-E3 OMO.#: OMO-SI2316DS-T1-E3	MOSFET 30V 3.4A 0.96W 50mohm @ 10V
	Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3	MOSFET 30V 3.4A 0.96W 50mohm @ 10V
	Mfr.#: SI2316DS-T1 OMO.#: OMO-SI2316DS-T1-1190	MOSFET RECOMMENDED ALT 781-SI2316BDS-E3
	Mfr.#: SI2316DS-T1-E3 OMO.#: OMO-SI2316DS-T1-E3-VISHAY	MOSFET N-CH 30V 2.9A SOT23-3
	Mfr.#: SI2316DS-T1-GE3 OMO.#: OMO-SI2316DS-T1-GE3-VISHAY	MOSFET N-CH 30V 2.9A SOT23-3
	Mfr.#: SI2316DS-T1-E3-CUT TAPE OMO.#: OMO-SI2316DS-T1-E3-CUT-TAPE-1190	Жаңа және түпнұсқа

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 3000
Саны енгізіңіз:

SI2316DS-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

-ден бастаңыз

SI2316D 4
SI2316 9
SI231 94
SI23 561
SI2 1125

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SI2316DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes