BSC026N02KS G

BSC026N02KS G
Mfr. #:
BSC026N02KS G
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC026N02KS G Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
BSC026N02KS G Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineon Technologies
Өнім санаты
FETs - жалғыз
Сериялар
OptiMOS
Қаптама
Digi-ReelR балама орамасы
Бөлік бүркеншік аттар
BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664
Монтаждау стилі
SMD/SMT
Сауда атауы
OptiMOS
Пакет-қорап
8-PowerTDFN
Технология
Си
Жұмыс температурасы
-55°C ~ 150°C (TJ)
Монтаждау түрі
Беттік орнату
Арналар саны
1 Channel
Жабдықтаушы-құрылғы-пакет
PG-TDSON-8
Конфигурация
Бір төрттік ағызу үштік көзі
FET түрі
MOSFET N-арнасы, металл оксиді
Қуат – Макс
78W
Транзистор түрі
1 N-Channel
Ағызу-көзге-кернеу-Vdss
20V
Кіріс-сыйымдылық-Ciss-Vds
7800pF @ 10V
FET мүмкіндігі
Logic Level Gate, 2.5V Drive
Ағымдағы-Үздіксіз-ағызу-Id-25°C
25A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
2.6 mOhm @ 50A, 4.5V
Vgs-th-Max-Id
1.2V @ 200μA
Gate-Charge-Qg-Vgs
52.7nC @ 4.5V
Pd-қуат-диссипация
2.8 W
Максималды-жұмыс температурасы
+ 150 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
9 ns
Көтерілу уақыты
115 ns
Vgs-қақпа-көзі-кернеу
12 V
Id-үздіксіз-ағызу-ток
25 A
Vds-ағызу-көз-бұзу-кернеу
20 V
Rds-On-Drain-Source-Resistance
2.6 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
52 ns
Әдеттегі-қосу-кешігу-уақыты
21 ns
Арна режимі
Жақсарту
Tags
BSC026N02KSG, BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC026N02KSGAUMA1
DISTI # V72:2272_06384322
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
4849
  • 3000:$0.5712
  • 1000:$0.6346
  • 500:$0.8121
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
  • 1:$1.2554
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.6901
BSC026N02KSGAUMA1
DISTI # 30701482
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 10000:$0.5798
  • 5000:$0.6029
BSC026N02KSGAUMA1
DISTI # 26195427
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
4849
  • 3000:$0.5712
  • 1000:$0.6346
  • 500:$0.8121
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 11:$1.1161
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.6789
  • 10000:$0.6549
  • 20000:$0.6309
  • 30000:$0.6099
  • 50000:$0.5989
BSC026N02KSGAUMA1
DISTI # SP000379664
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R (Alt: SP000379664)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€0.9889
  • 10000:€0.7709
  • 20000:€0.6889
  • 30000:€0.6269
  • 50000:€0.5879
BSC026N02KS G
DISTI # 726-BSC026N02KSG
Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant
7674
  • 1:$1.3700
  • 10:$1.1700
  • 100:$0.8920
  • 500:$0.7880
  • 1000:$0.6220
BSC026N02KSGAUMA1
DISTI # 726-BSC026N02KSGAUMA
Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant
2883
  • 1:$1.5500
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.8970
  • 1000:$0.7080
  • 5000:$0.6280
BSC026N02KSGInfineon Technologies AGPower Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
40500
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
BSC026N02KSGAUMA1
DISTI # 7528154P
Infineon Technologies AGMOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL3490
  • 50:£0.8500
  • 250:£0.6650
  • 1250:£0.4650
  • 2500:£0.4400
BSC026N02KSGAUMA1
DISTI # C1S322000644539
Infineon Technologies AGMOSFETs
RoHS: Compliant
5000
  • 5000:$0.6400
BSC026N02KSGAUMA1
DISTI # C1S322000653078
Infineon Technologies AGMOSFETs
RoHS: Compliant
4849
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
BSC026N02KSGAUMA1
DISTI # 1775434
Infineon Technologies AGMOSFET, N CH, 100A, 20V, PG-TDSON-8
RoHS: Compliant
0
  • 1:$2.1700
  • 10:$1.8500
  • 100:$1.4100
  • 500:$1.2500
  • 1000:$0.9840
  • 5000:$0.9840
Сурет Бөлім № Сипаттама
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS

MOSFET DIFFERENTIATED MOSFETS
BSC026N02KS G

Mfr.#: BSC026N02KS G

OMO.#: OMO-BSC026N02KS-G-1190

MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC026N02KSG

Mfr.#: BSC026N02KSG

OMO.#: OMO-BSC026N02KSG-1190

Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC026N02KSGAUMA1

Mfr.#: BSC026N02KSGAUMA1

OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 20V 100A TDSON-8
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS-1190

Trans MOSFET N-CH 40V 23A
BSC026N04LSATMA1

Mfr.#: BSC026N04LSATMA1

OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 23A 8TDSON
BSC026N08NS5

Mfr.#: BSC026N08NS5

OMO.#: OMO-BSC026N08NS5-1190

POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC026NE2LS5ATMA1-CUT TAPE

Mfr.#: BSC026NE2LS5ATMA1-CUT TAPE

OMO.#: OMO-BSC026NE2LS5ATMA1-CUT-TAPE-1190

Жаңа және түпнұсқа
BSC026NE2LS5ATMA1

Mfr.#: BSC026NE2LS5ATMA1

OMO.#: OMO-BSC026NE2LS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET LV POWER MOS
BSC026N08NS5ATMA1

Mfr.#: BSC026N08NS5ATMA1

OMO.#: OMO-BSC026N08NS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 80V 100A TDSON-8
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1000
Саны енгізіңіз:
BSC026N02KS G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,93 $
0,93 $
10
0,89 $
8,86 $
100
0,84 $
83,97 $
500
0,79 $
396,55 $
1000
0,75 $
746,40 $
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