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IPN60R2K1CEATMA1

IPN60R2K1CEATMA1
Mfr. #:
IPN60R2K1CEATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET CONSUMER
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPN60R2K1CEATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPN60R2K1CEATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SOT-223-4
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
3.7 A
Rds On - ағызу көзіне қарсылық:
4.91 Ohms
Vgs th - Gate-Source шекті кернеуі:
2.5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
6.7 nC
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
5 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Ролик
Биіктігі:
1.6 mm
Ұзындығы:
6.5 mm
Серия:
CoolMOS CE
Транзистор түрі:
1 N-Channel
Ені:
3.5 mm
Бренд:
Infineon Technologies
Күз уақыты:
50 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
7 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
30 ns
Қосудың әдеттегі кешігу уақыты:
7 ns
Бөлім # Бүркеншік аттар:
IPN60R2K1CE SP001434886
Бірлік салмағы:
0.008818 oz
Tags
IPN60R2, IPN60, IPN6, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
***ark
Mosfet, N-Ch, 600V, 3.7A, Sot-223-3; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.89Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPN60R2K1CEATMA1
DISTI # 33943948		Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant		9000
  • 3000:$0.1370
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1CT-ND		Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		25In Stock
  • 1000:$0.2011
  • 500:$0.2603
  • 100:$0.3313
  • 10:$0.4440
  • 1:$0.5200
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1DKR-ND		Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		25In Stock
  • 1000:$0.2011
  • 500:$0.2603
  • 100:$0.3313
  • 10:$0.4440
  • 1:$0.5200
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1TR-ND		Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 30000:$0.1470
  • 15000:$0.1551
  • 6000:$0.1666
  • 3000:$0.1781
IPN60R2K1CEATMA1
DISTI # V72:2272_14663636		Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant		0
    IPN60R2K1CEATMA1
    DISTI # V36:1790_14663636    		Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
    RoHS: Compliant    		0
    • 3000000:$0.1274
    • 1500000:$0.1277
    • 300000:$0.1447
    • 30000:$0.1733
    • 3000:$0.1781
    IPN60R2K1CEATMA1
    DISTI # IPN60R2K1CEATMA1    		Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN60R2K1CEATMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1389
    • 18000:$0.1409
    • 12000:$0.1459
    • 6000:$0.1509
    • 3000:$0.1569
    IPN60R2K1CEATMA1
    DISTI # IPN60R2K1CE    		Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R (Alt: IPN60R2K1CE)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
    • 150000:$0.1385
    • 75000:$0.1403
    • 30000:$0.1421
    • 15000:$0.1439
    • 9000:$0.1478
    • 6000:$0.1519
    • 3000:$0.1563
    IPN60R2K1CEATMA1
    DISTI # SP001434886    		Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R (Alt: SP001434886)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1299
    • 18000:€0.1399
    • 12000:€0.1649
    • 6000:€0.2019
    • 3000:€0.2599
    IPN60R2K1CEATMA1
    DISTI # 97Y1834    		Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 97Y1834)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
      IPN60R2K1CEATMA1
      DISTI # 97Y1834      		Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.89ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1975
      • 1000:$0.2070
      • 500:$0.2270
      • 250:$0.2480
      • 100:$0.2670
      • 50:$0.3250
      • 25:$0.3820
      • 10:$0.4390
      • 1:$0.5230
      IPN60R2K1CEATMA1
      DISTI # 726-IPN60R2K1CEATMA1      		Infineon Technologies AGMOSFET CONSUMER
      RoHS: Compliant      		26012
      • 1:$0.4700
      • 10:$0.3950
      • 100:$0.2410
      • 1000:$0.1860
      • 3000:$0.1590
      IPN60R2K1CEATMA1
      DISTI # 1300919P      		Infineon Technologies AGMOSFET N-CH 600V 5.9A COOLMOS CE SOT-223, RL5525
      • 2500:£0.1200
      • 1000:£0.1340
      • 500:£0.1540
      • 125:£0.1790
      IPN60R2K1CEATMA1
      DISTI # 2617449      		Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3
      RoHS: Compliant      		520
      • 1000:$0.3040
      • 500:$0.3930
      • 100:$0.5000
      • 10:$0.6690
      • 1:$0.7800
      IPN60R2K1CEATMA1
      DISTI # 2617449      		Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3525
      • 500:£0.1430
      • 250:£0.1640
      • 100:£0.1850
      • 25:£0.3270
      • 5:£0.3450
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      Қол жетімділік
      Қор:
      55
      Тапсырыс бойынша:
      2038
      Саны енгізіңіз:
      IPN60R2K1CEATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,47 $
      0,47 $
      10
      0,40 $
      3,95 $
      100
      0,24 $
      24,10 $
      1000
      0,19 $
      186,00 $
      -ден бастаңыз
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