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STU3N62K3

STU3N62K3
Mfr. #:
STU3N62K3
Өндіруші:
STMicroelectronics
Сипаттама:
MOSFET N-Ch, 620V-2.2ohms 2.7A
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
STU3N62K3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
STU3N62K3 Көбірек ақпарат STU3N62K3 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
STMicroelectronics
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-251-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
620 V
Идентификатор - үздіксіз төгу тогы:
2.7 A
Rds On - ағызу көзіне қарсылық:
2.5 Ohms
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
13 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
45 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
MDmesh
Қаптама:
Түтік
Биіктігі:
6.2 mm
Ұзындығы:
6.6 mm
Серия:
STU3N62K3
Транзистор түрі:
1 N-Channel
Ені:
2.4 mm
Бренд:
STMicroelectronics
Күз уақыты:
15.6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
6.8 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
22 ns
Қосудың әдеттегі кешігу уақыты:
9 ns
Бірлік салмағы:
0.139332 oz
Tags
STU3N, STU3, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK package
*** Source Electronics
Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 620V 2.7A IPAK
***r Electronics
Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET, N CH, 620V, 2.7A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***icroelectronics
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in IPAK package
***ure Electronics
N-Channel 620 V 2 Ohm Through Hole SuperMESH3 Power Mosfet - IPAK
***ark
Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Source Voltage Vds:620V; On Resistance
***r Electronics
Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK package
*** Electronics
MOSFET Transistor, N Channel, 5 A, 600 V, 0.84 ohm, 10 V, 3 V RoHS Compliant: Yes
*** Source Electronics
MOSFET N-CH 600V 5A IPAK / Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes
***inecomponents.com
60V P-Channel A-FET / Substitute of IRFU9024
***i-Key
P-CHANNEL POWER MOSFET
***ser
MOSFETs PCh/60V/7.8a/0.28Ohm
***emi
N-Channel Power MOSFET, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK
***ure Electronics
Single N-Channel 600 V 0.90 Ohm 17 nC 52 W Silicon Through Hole Mosfet - TO-251
***el Electronic
FAIRCHILD SEMICONDUCTOR FCU900N60ZPower MOSFET, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
*** Stop Electro
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH, 600V, 4.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ark
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251
***ronik
N-CH 30V 35A 11mOhm TO251-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***et
Transistor MOSFET N-CH 600V 1.8A 3-Pin TO-251 T/R
***ment14 APAC
MOSFET, N, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; Current Id Max:1.8A; Package / Case:TO-251; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Zener-Protected SuperMESH3 Power MOSFETs
STMicroelectronics new SuperMESH3™ Power MOSFETs are obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly down, special attention has been taken to ensure that these MOSFETs have a very good dynamic performance coupled with a very large avalanche capability for the most demanding switching applications. SuperMESH3™ Power MOSFETs now come in voltages up to 1200V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Бөлім № Mfg. Сипаттама Қор Бағасы
STU3N62K3
DISTI # 31976754		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		4873
  • 48:$0.2125
STU3N62K3
DISTI # 497-12695-5-ND		STMicroelectronicsMOSFET N-CH 620V 2.7A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 5025:$0.4818
  • 2550:$0.5071
  • 525:$0.6883
  • 150:$0.8332
  • 75:$1.0143
  • 10:$1.0690
  • 1:$1.2000
STU3N62K3
DISTI # STU3N62K3		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STU3N62K3)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.4399
  • 18000:$0.4489
  • 12000:$0.4699
  • 6000:$0.4919
  • 3000:$0.5169
STU3N62K3
DISTI # STU3N62K3		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube (Alt: STU3N62K3)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 0
  • 750:€0.1999
  • 450:€0.2159
  • 300:€0.2339
  • 150:€0.2549
  • 75:€0.3119
STU3N62K3
DISTI # 57P2562		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7A,Drain Source Voltage Vds:620V,On Resistance Rds(on):2.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:- RoHS Compliant: Yes0
  • 10000:$0.4490
  • 2500:$0.4630
  • 1000:$0.5730
  • 500:$0.6560
  • 100:$0.7420
  • 10:$0.9660
  • 1:$1.1300
STU3N62K3
DISTI # 511-STU3N62K3		STMicroelectronicsMOSFET N-Ch, 620V-2.2ohms 2.7A
RoHS: Compliant		5980
  • 1:$1.1400
  • 10:$0.9660
  • 100:$0.7420
  • 500:$0.6560
  • 1000:$0.5180
  • 3000:$0.4590
  • 9000:$0.4420
STU3N62K3STMicroelectronics 125
    STU3N62K3
    DISTI # STU3N62K3    		STMicroelectronicsTransistor: N-MOSFET,unipolar,620V,1.7A,45W,IPAK152
    • 300:$0.2800
    • 75:$0.3000
    • 25:$0.3400
    • 5:$0.4200
    • 1:$0.6500
    STU3N62K3
    DISTI # 2098356    		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, IPAK
    RoHS: Compliant    		74
    • 24000:$0.6450
    • 9000:$0.6660
    • 3000:$0.6920
    • 1000:$0.7810
    • 500:$0.9890
    • 100:$1.1200
    • 10:$1.4600
    • 1:$1.7200
    STU3N62K3STMicroelectronicsN-channel 620V, 2.2, 2.7A Power MOSFET2050
    • 1:$0.2900
    • 100:$0.2700
    • 500:$0.2500
    • 1000:$0.2300
    STU3N62K3
    DISTI # 2098356    		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, IPAK74
    • 500:£0.4510
    • 250:£0.4810
    • 100:£0.5090
    • 25:£0.6630
    • 5:£0.7380
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    NCP1608BDR2G

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    		 MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
    ATL432BIDBZR

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    		 Voltage References voltage regulator
    STD10N60M2

    Mfr.#: STD10N60M2

    OMO.#: OMO-STD10N60M2

    		 MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
    NCP1397ADR2G

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    		 Switching Controllers NCP1397A
    0659P5000-13

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    		 Cartridge Fuses 5A, 250V, 5X20MM AXIAL
    REA101M1HBK-0811P

    Mfr.#: REA101M1HBK-0811P

    OMO.#: OMO-REA101M1HBK-0811P-1130

    		 Aluminum Electrolytic Capacitors - Leaded 50V 100uF 20% 8x11.5mm
    STFU24N60M2

    Mfr.#: STFU24N60M2

    OMO.#: OMO-STFU24N60M2-STMICROELECTRONICS

    		 MOSFET N-CH 600V 18A TO-220FP
    STD10N60M2

    Mfr.#: STD10N60M2

    OMO.#: OMO-STD10N60M2-STMICROELECTRONICS

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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1988
    Саны енгізіңіз:
    STU3N62K3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    1,14 $
    1,14 $
    10
    0,97 $
    9,66 $
    100
    0,74 $
    74,20 $
    500
    0,66 $
    328,00 $
    1000
    0,52 $
    518,00 $
    3000
    0,46 $
    1 377,00 $
    9000
    0,44 $
    3 978,00 $
    24000
    0,43 $
    10 272,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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