SQJ840EP-T1_GE3

SQJ840EP-T1_GE3
Mfr. #:
SQJ840EP-T1_GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET 30V 30A 46W AEC-Q101 Qualified
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SQJ840EP-T1_GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ840EP-T1_GE3 DatasheetSQJ840EP-T1_GE3 Datasheet (P4-P6)SQJ840EP-T1_GE3 Datasheet (P7-P9)SQJ840EP-T1_GE3 Datasheet (P10-P12)
ECAD Model:
Көбірек ақпарат:
SQJ840EP-T1_GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PowerPAK-SO-8L-4
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
30 A
Rds On - ағызу көзіне қарсылық:
7.5 mOhms
Vgs th - Gate-Source шекті кернеуі:
1.2 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
38 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
46 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Біліктілік:
AEC-Q101
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Биіктігі:
1.04 mm
Ұзындығы:
6.15 mm
Серия:
SQ
Транзистор түрі:
1 N-Channel
Ені:
5.13 mm
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
38 S
Күз уақыты:
17 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
11 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
28 ns
Қосудың әдеттегі кешігу уақыты:
11 ns
Бірлік салмағы:
0.017870 oz
Tags
SQJ84, SQJ8, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
***ure Electronics
Single N-Channel 30 V 9.3 mOhm 46 W SMT Automotive Power Mosfet - PowerPAK SO-8L
***ark
MOSFET,N CHANNEL,W DIODE,30V,30A,POPAK8L
***ronik
N-CH 30V 30A 115mOhm PPSO-8L RoHSconf
*** Americas
N-CHANNEL 30-V (D-S) 175C MOSFET
***S
French Electronic Distributor since 1988
***nell
MOSFET,N CH,W DIODE,30V,30A,POPAK8L; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 46W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V
***ure Electronics
Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 14A, 8.7 MOHM, 8.1 NC QG, PQFN56
***ment14 APAC
MOSFET, N CH, 30V, 14A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***(Formerly Allied Electronics)
SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO
***ure Electronics
Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8
***nell
MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 15A, 8.5 MOHM, 9.3 NC QG, PQFN56
***et
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):8.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 15A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:34A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ
***ure Electronics
N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 25V 75A N-Channel
***ment14 APAC
N CHANNEL MOSFET, 25V, 75A, D-PAK
***emi
Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage, 30V
***et
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin Power 56 T/R
***ure Electronics
Trans MOSFET N-CH 30V 13A/27A 8-Pin Power 56 T/R - Tape and Reel
***nell
MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Бөлім № Mfg. Сипаттама Қор Бағасы
SQJ840EP-T1_GE3
DISTI # SQJ840EP-T1_GE3-ND
Vishay SiliconixMOSFET N-CH 30V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.6909
SQJ840EP-T1_GE3
DISTI # SQJ840EP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
    SQJ840EP-T1_GE3
    DISTI # SQJ840EP-T1_GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1_GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.6019
    • 18000:$0.6189
    • 12000:$0.6359
    • 6000:$0.6629
    • 3000:$0.6839
    SQJ840EP-T1_GE3
    DISTI # SQJ840EP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R (Alt: SQJ840EP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.6759
    • 18000:€0.7069
    • 12000:€0.7999
    • 6000:€0.9859
    • 3000:€1.3749
    SQJ840EP-T1_GE3
    DISTI # 78-SQJ840EP-T1_GE3
    Vishay IntertechnologiesMOSFET 30V 30A 46W AEC-Q101 Qualified
    RoHS: Compliant
    3000
    • 1:$1.6400
    • 10:$1.3500
    • 100:$1.0300
    • 500:$0.8930
    • 1000:$0.7040
    • 3000:$0.6570
    • 6000:$0.6250
    • 9000:$0.6110
    SQJ840EP-T1-GE3
    DISTI # 78-SQJ840EP-T1-GE3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3
    RoHS: Compliant
    0
      SQJ840EP-T1_GE3Vishay Intertechnologies 2990
        SQJ840EP-T1-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3
        RoHS: Compliant
        Americas -
          Сурет Бөлім № Сипаттама
          SQJ840EP-T1_GE3

          Mfr.#: SQJ840EP-T1_GE3

          OMO.#: OMO-SQJ840EP-T1-GE3-286

          MOSFET 30V 30A 46W AEC-Q101 Qualified
          SQJ840EP-T1-GE3

          Mfr.#: SQJ840EP-T1-GE3

          OMO.#: OMO-SQJ840EP-T1-GE3-4B8

          MOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3
          SQJ840EP-T1-GE3

          Mfr.#: SQJ840EP-T1-GE3

          OMO.#: OMO-SQJ840EP-T1-GE3-317

          RF Bipolar Transistors MOSFET 30V 30A 46W N-Ch Automotive
          SQJ840EP-T1_GE3

          Mfr.#: SQJ840EP-T1_GE3

          OMO.#: OMO-SQJ840EP-T1-GE3-VISHAY

          MOSFET N-CH 30V 30A PPAK SO-8
          Қол жетімділік
          Қор:
          Available
          Тапсырыс бойынша:
          1986
          Саны енгізіңіз:
          SQJ840EP-T1_GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
          Анықтамалық баға (USD)
          Саны
          Тауар өлшемінің бағасы
          Қосымша. Бағасы
          1
          1,64 $
          1,64 $
          10
          1,35 $
          13,50 $
          100
          1,03 $
          103,00 $
          500
          0,89 $
          446,50 $
          1000
          0,70 $
          704,00 $
          -ден бастаңыз
          Ең жаңа өнімдер
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