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FDMS0309AS

FDMS0309AS
Mfr. #:
FDMS0309AS
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET PT8 NCH 30/20V S PQF
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FDMS0309AS Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
Power-56-8
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Конфигурация:
Қосарлы
Сауда атауы:
PowerTrench SyncFET
Қаптама:
Ролик
Биіктігі:
1.1 mm
Ұзындығы:
6 mm
Серия:
FDMS0309AS
Транзистор түрі:
2 N-channel
Ені:
5 mm
Бренд:
ON Semiconductor / Fairchild
Өнім түрі:
MOSFET
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Бірлік салмағы:
0.002402 oz
Tags
FDMS0309A, FDMS0309, FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56
*** Stop Electro
Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***roFlash
Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R
***Yang
Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ow.cn
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
***rchild Semiconductor
The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Бөлім № Mfg. Сипаттама Қор Бағасы
FDMS0309AS
DISTI # FDMS0309ASCT-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5898In Stock
  • 1000:$0.2859
  • 500:$0.3573
  • 100:$0.4824
  • 10:$0.6250
  • 1:$0.7100
FDMS0309AS
DISTI # FDMS0309ASDKR-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5898In Stock
  • 1000:$0.2859
  • 500:$0.3573
  • 100:$0.4824
  • 10:$0.6250
  • 1:$0.7100
FDMS0309AS
DISTI # FDMS0309ASTR-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.2515
FDMS0309AS_SN00347
DISTI # FDMS0309AS_SN00347-ND		ON SemiconductorMOSFET N-CH
RoHS: Compliant
Min Qty: 1
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMS0309AS
    DISTI # FDMS0309AS    		ON SemiconductorTrans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0309AS)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.2639
    • 6000:$0.2619
    • 12000:$0.2579
    • 18000:$0.2549
    • 30000:$0.2489
    FDMS0309AS
    DISTI # 68X0370    		ON SemiconductorPT8 NCH 30/20V S PQF / REEL0
    • 24000:$0.2140
    • 9000:$0.2210
    • 1:$0.2290
    FDMS0309AS
    DISTI # 512-FDMS0309AS    		ON SemiconductorMOSFET PT8 NCH 30/20V S PQF
    RoHS: Compliant    		8995
    • 1:$0.5900
    • 10:$0.4890
    • 100:$0.3160
    • 1000:$0.2530
    • 3000:$0.2130
    • 9000:$0.2060
    • 24000:$0.1980
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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1988
    Саны енгізіңіз:
    FDMS0309AS ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    0,75 $
    0,75 $
    10
    0,63 $
    6,30 $
    100
    0,41 $
    40,60 $
    1000
    0,32 $
    325,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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