IPB042N10N3GATMA1

IPB042N10N3GATMA1
Mfr. #:
IPB042N10N3GATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-CH 100V 100A TO263-3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPB042N10N3GATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPB042N10N3GATMA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші
Infineon Technologies
Өнім санаты
Транзисторлар - FETs, MOSFETs - Бірыңғай
Сериялар
XPB042N10
Қаптама
Ролик
Бөлік бүркеншік аттар
G IPB042N10N3 IPB042N10N3GXT SP000446880
Сауда атауы
OptiMOS
Пакет-қорап
TO-263-3
Технология
Си
Арналар саны
1 Channel
Транзистор түрі
1 N-Channel
Транзистор-полярлық
N-арна
Tags
IPB042N10N3GA, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 100 V 4.2 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPB042N10N3GATMA1
DISTI # V72:2272_06378065
Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
36
  • 25:$1.9617
  • 10:$1.9682
  • 1:$2.2261
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6222In Stock
  • 500:$1.8588
  • 100:$2.3899
  • 10:$2.9740
  • 1:$3.2900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6222In Stock
  • 500:$1.8588
  • 100:$2.3899
  • 10:$2.9740
  • 1:$3.2900
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
6000In Stock
  • 1000:$1.4953
IPB042N10N3GATMA1
DISTI # 31049885
Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1000
  • 1000:$1.4933
IPB042N10N3GATMA1
DISTI # 31010737
Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
36
  • 25:$1.9617
  • 10:$1.9682
  • 7:$2.2261
IPB042N10N3GXT
DISTI # IPB042N10N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 1000:$1.2900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
IPB042N10N3GATMA1
DISTI # 47Y8047
Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V , RoHS Compliant: Yes705
  • 1:$2.7600
  • 10:$2.3500
  • 25:$2.1900
  • 50:$2.0400
  • 100:$1.8800
  • 250:$1.7700
  • 500:$1.6500
IPB042N10N3GATMA1Infineon Technologies AGSingle N-Channel 100 V 4.2 mOhm 88 nC OptiMOS Power Mosfet - D2PAK
RoHS: Not Compliant
1000Reel
  • 1000:$1.2400
IPB042N10N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
500
  • 1000:$1.0000
  • 500:$1.0500
  • 100:$1.1000
  • 25:$1.1400
  • 1:$1.2300
IPB042N10N3GATMA1
DISTI # 726-IPB042N10N3GATMA
Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant
1607
  • 1:$2.7500
  • 10:$2.3400
  • 100:$1.8700
  • 500:$1.6400
  • 1000:$1.3600
  • 2000:$1.2600
IPB042N10N3 G
DISTI # 726-IPB042N10N3G
Infineon Technologies AGMOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant
830
  • 1:$2.7600
  • 10:$2.3500
  • 100:$1.8800
  • 500:$1.6500
  • 1000:$1.3600
IPB042N10N3GATMA1
DISTI # 8275237
Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, PK370
  • 10:£1.5750
  • 50:£1.3280
  • 250:£1.1860
  • 500:£1.0290
IPB042N10N3GATMA1
DISTI # 8275237P
Infineon Technologies AGMOSFET N-CH 100A 100V OPTIMOS3 TO263, RL980
  • 50:£1.3280
  • 250:£1.1860
  • 500:£1.0290
IPB042N10N3GATMA1
DISTI # IPB042N10N3GATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,100A,214W,PG-TO263-3778
  • 1:$1.8961
  • 3:$1.6261
  • 10:$1.3077
  • 100:$1.1371
  • 1000:$1.0598
IPB042N10N3GATMA1
DISTI # 2443431
Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant
680
  • 1:$4.3700
  • 10:$3.7200
  • 100:$2.9800
  • 500:$2.6200
  • 1000:$2.1600
  • 2000:$2.0100
  • 5000:$1.9400
  • 10000:$1.8700
IPB042N10N3GATMA1
DISTI # XSFP00000153641
Infineon Technologies AGPowerField-EffectTransistor,100AI(D),100V,0.0042ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-263AB
RoHS: Compliant
1346
  • 1000:$1.6500
  • 1346:$1.5500
IPB042N10N3GATMA1
DISTI # 2443431
Infineon Technologies AGMOSFET, N CH, 100V, 100A, TO-263-3
RoHS: Compliant
680
  • 1:£2.3700
  • 10:£1.3400
  • 100:£1.2700
  • 250:£1.2000
  • 500:£1.0400
IPB042N10N3GATMA1
DISTI # C1S322000212747
Infineon Technologies AGTrans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
36
  • 25:$1.9617
  • 10:$1.9682
Сурет Бөлім № Сипаттама
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G

MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
IPB042N10N3GE818XT

Mfr.#: IPB042N10N3GE818XT

OMO.#: OMO-IPB042N10N3GE818XT

MOSFET N-Ch 100V 100A D2PAK-2
IPB042N10N3 G E8187

Mfr.#: IPB042N10N3 G E8187

OMO.#: OMO-IPB042N10N3-G-E8187

MOSFET N-Ch 100V 100A D2PAK-2
IPB042N10N

Mfr.#: IPB042N10N

OMO.#: OMO-IPB042N10N-1190

Жаңа және түпнұсқа
IPB042N10N3 G

Mfr.#: IPB042N10N3 G

OMO.#: OMO-IPB042N10N3-G-1190

Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263
IPB042N10N3G

Mfr.#: IPB042N10N3G

OMO.#: OMO-IPB042N10N3G-1190

100V,100A,N Channel Power MOSFET
IPB042N10N3GATMA1INFINEO

Mfr.#: IPB042N10N3GATMA1INFINEO

OMO.#: OMO-IPB042N10N3GATMA1INFINEO-1190

Жаңа және түпнұсқа
IPB042N10N3GE8187ATMA1

Mfr.#: IPB042N10N3GE8187ATMA1

OMO.#: OMO-IPB042N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 100V 100A TO263-3
IPB042N10N3GS

Mfr.#: IPB042N10N3GS

OMO.#: OMO-IPB042N10N3GS-1190

Жаңа және түпнұсқа
IPB042N10N3GE818XT

Mfr.#: IPB042N10N3GE818XT

OMO.#: OMO-IPB042N10N3GE818XT-317

RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
4500
Саны енгізіңіз:
IPB042N10N3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,25 $
1,25 $
10
1,19 $
11,87 $
100
1,12 $
112,43 $
500
1,06 $
530,95 $
1000
1,00 $
999,40 $
-ден бастаңыз
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