We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SPB10N10 DISTI # SPB10N10-ND | Infineon Technologies AG | MOSFET N-CH 100V 10.3A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB10N10 G DISTI # SPB10N10G-ND | Infineon Technologies AG | MOSFET N-CH 100V 10.3A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB10N10L DISTI # SPB10N10L-ND | Infineon Technologies AG | MOSFET N-CH 100V 10.3A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB10N10L G DISTI # SPB10N10LGINTR-ND | Infineon Technologies AG | MOSFET N-CH 100V 10.3A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPB10N10L G DISTI # SPB10N10LGINCT-ND | Infineon Technologies AG | MOSFET N-CH 100V 10.3A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SPB10N10L G DISTI # SPB10N10LGINDKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 10.3A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SPB10N10L G DISTI # SPB10N10LG | Infineon Technologies AG | Trans MOSFET N-CH 100V 10.3A 3-Pin(2+Tab) TO-263 - Bulk (Alt: SPB10N10LG) RoHS: Not Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| SPB10N10L G DISTI # 726-SPB10N10LG | Infineon Technologies AG | MOSFET N-Ch 100V 10.3A D2PAK-2 RoHS: Compliant | 0 | |
| SPB10N10LG | Infineon Technologies AG | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 993 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SPB11N60C3ATMA1 OMO.#: OMO-SPB11N60C3ATMA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: SPB100N03S2L-03 |
MOSFET N-CH 30V 100A D2PAK |
|
|
Mfr.#: SPB100N03S2L03T |
MOSFET N-CH 30V 100A D2PAK |
|
|
Mfr.#: SPB100N04S2-04 |
MOSFET N-CH 40V 100A D2PAK |
|
|
Mfr.#: SPB100N04S2L-03 |
MOSFET N-CH 40V 100A D2PAK |
|
Mfr.#: SPB10N10LG OMO.#: OMO-SPB10N10LG-1190 |
Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: SPB11N60C2 OMO.#: OMO-SPB11N60C2-1190 |
- Bulk (Alt: SPB11N60C2) |
|
|
Mfr.#: SPB12R80 OMO.#: OMO-SPB12R80-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SPB17N80C3 OMO.#: OMO-SPB17N80C3-1190 |
Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 |
|
|
Mfr.#: SPB17N80C3ATMA1 |
MOSFET N-CH 800V 17A D2PAK |
