BSS139H6327XTSA1

BSS139H6327XTSA1
Mfr. #:
BSS139H6327XTSA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 250V 30mA SOT-23-3
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSS139H6327XTSA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PG-SOT-23-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
250 V
Идентификатор - үздіксіз төгу тогы:
100 mA
Rds On - ағызу көзіне қарсылық:
14 Ohms
Vgs th - Gate-Source шекті кернеуі:
2.1 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
2.3 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
360 mW
Конфигурация:
Бойдақ
Арна режимі:
Таусылуы
Біліктілік:
AEC-Q101
Қаптама:
Ролик
Биіктігі:
1.1 mm
Ұзындығы:
2.9 mm
Транзистор түрі:
1 N-Channel
Ені:
1.3 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
60 mS
Күз уақыты:
182 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
5.4 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
29 ns
Қосудың әдеттегі кешігу уақыты:
5.8 ns
Бөлім # Бүркеншік аттар:
BSS139 BSS139H6327XT H6327 SP000702610
Бірлік салмағы:
0.000212 oz
Tags
BSS139H6327X, BSS139H63, BSS139H, BSS139, BSS13, BSS1, BSS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 250 V 14 Ohm 2.3 nC SIPMOS® Small Signal Mosfet - SOT-23
***p One Stop Global
Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
***sible Micro
Transistor, FET, N-channel depletion, 250V, 0.1A, SOT23, SMD
***el Electronic
250V 100mA 360mW 14Ω@10V,100uA 1V@56uA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:100Ma; On Resistance Rds(On):7.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: Yes
***ineon
Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. | Summary of Features: Depletion mode; dv/dt rated; Available with V GS(th) indicator on the reel; Halogen free; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 100 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 14 / Gate-Source Voltage V = 20 / Fall Time ns = 182 / Rise Time ns = 5.4 / Turn-OFF Delay Time ns = 29 / Turn-ON Delay Time ns = 5.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360
***ure Electronics
Single N-Channel 240 V 14 Ohm 2.1 nC SIPMOS® Small Signal Mosfet - SOT-23
***p One Stop
Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:110Ma; On Resistance Rds(On):7.7Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 11 / Drain-Source Voltage (Vds) V = 240 / ON Resistance (Rds(on)) Ohm = 14 / Gate-Source Voltage V = 20 / Fall Time ns = 64.5 / Rise Time ns = 3.1 / Turn-OFF Delay Time ns = 13.7 / Turn-ON Delay Time ns = 3.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360
***emi
P-Channel Enhancement Mode Field Effect Transistor -60V, -0.12A, 10Ω
***Yang
Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
***enic
60V 120mA 360mW 10´Î@10V500mA 3.5V@1mA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***rchild Semiconductor
This P-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0610 can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
***ure Electronics
P-Channel 50 V 10 Ohm 225 mW Surface Mount Power MOSFET - SOT-23
***Yang
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R - Tape and Reel
***emi
P-Channel MOSFET, Enhancement Mode, -50V, -0.13A, 10Ω
***r Electronics
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -130 / Drain-Source Voltage (Vds) V = -50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 9.6 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
***ment14 APAC
MOSFET,P CH,50V,0.13A,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs Typ:-1.7V; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360µW; Power Dissipation Ptot Max:360mW; Pulse Current Idm:520mA; SMD Marking:SP; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-50V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-5V; Voltage Vgs th Max:-2V
***Yang
Transistor: P-MOSFET, unipolar, -50V, -130mA, 10ohm, 300mW, -55+150 deg.C, SMD, SOT23
***ure Electronics
P-Channel 50 V 10 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
***ical
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Source Voltage Vds:-50V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.2 W
***nell
MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: 130mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -130mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: -20V
***ure Electronics
P-Channel 50 V 0.13 A 300 mW Automotive Enhancement Mode Mosfet - SOT-23
***Yang
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R - Tape and Reel
***el Electronic
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
***ical
Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 T/R
***ark
; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:0.5A; On Resistance, Rds(on):7.5ohm; Package/Case:SOT-23; Termination Type:SMD; Current, Idm pulse:0.8A; Drain-Source Breakdown Voltage:60V ;RoHS Compliant: Yes
***nell
MOSFET, N, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 115mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(G), 2(S),3(D); Pulse Current Idm: 800mA; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 2.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.5V; Voltage Vgs th Min: 1V
Бөлім № Mfg. Сипаттама Қор Бағасы
BSS139H6327XTSA1
DISTI # V36:1790_06391806
Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant
6000
    BSS139H6327XTSA1
    DISTI # V72:2272_06391806
    Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
    RoHS: Compliant
    1600
    • 1000:$0.1526
    • 500:$0.1787
    • 250:$0.1804
    • 100:$0.2005
    • 25:$0.3253
    • 10:$0.3615
    • 1:$0.4284
    BSS139H6327XTSA1
    DISTI # BSS139H6327XTSA1CT-ND
    Infineon Technologies AGMOSFET N-CH 250V 100MA SOT23
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    33436In Stock
    • 1000:$0.1758
    • 500:$0.2275
    • 100:$0.2895
    • 10:$0.3880
    • 1:$0.4500
    BSS139H6327XTSA1
    DISTI # BSS139H6327XTSA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 250V 100MA SOT23
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    33436In Stock
    • 1000:$0.1758
    • 500:$0.2275
    • 100:$0.2895
    • 10:$0.3880
    • 1:$0.4500
    BSS139H6327XTSA1
    DISTI # BSS139H6327XTSA1TR-ND
    Infineon Technologies AGMOSFET N-CH 250V 100MA SOT23
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    30000In Stock
    • 75000:$0.1272
    • 30000:$0.1285
    • 15000:$0.1355
    • 6000:$0.1456
    • 3000:$0.1556
    BSS139H6327XTSA1
    DISTI # 23459133
    Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
    RoHS: Compliant
    45000
    • 3000:$0.0844
    BSS139H6327XTSA1
    DISTI # 30580364
    Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
    RoHS: Compliant
    4150
    • 67:$0.3787
    BSS139H6327XTSA1
    DISTI # 32346932
    Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
    RoHS: Compliant
    1600
    • 58:$0.4284
    BSS139H6327XTSA1
    DISTI # BSS139H6327XTSA1
    Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS139H6327XTSA1)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
    • 60000:$0.0969
    • 30000:$0.0979
    • 18000:$0.1019
    • 12000:$0.1059
    • 6000:$0.1099
    BSS139H6327XTSA1
    DISTI # SP000702610
    Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A 3-Pin SOT-23 T/R (Alt: SP000702610)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.0879
    • 18000:€0.0929
    • 12000:€0.1079
    • 6000:€0.1269
    • 3000:€0.1479
    BSS139H6327XTSA1
    DISTI # SP000702610
    Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A 3-Pin SOT-23 T/R (Alt: SP000702610)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.0799
    • 18000:€0.0859
    • 12000:€0.1019
    • 6000:€0.1239
    • 3000:€0.1599
    BSS139H6327XTSA1
    DISTI # 87X8601
    Infineon Technologies AGMOSFET, N CH, 250V, 0.1A, SOT-23-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100mA,Drain Source Voltage Vds:250V,On Resistance Rds(on):7.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.4V,Power RoHS Compliant: Yes10390
    • 1000:$0.1650
    • 500:$0.1810
    • 250:$0.1970
    • 100:$0.2130
    • 50:$0.2590
    • 25:$0.3040
    • 10:$0.3490
    • 1:$0.4140
    BSS139H6327XTSA1.
    DISTI # 31AC8235
    Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100mA,Drain Source Voltage Vds:250V,On Resistance Rds(on):7.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.4V,Power Dissipation Pd:360mW,No. of Pins:3Pins0
    • 30000:$0.0970
    • 18000:$0.0980
    • 12000:$0.1020
    • 6000:$0.1060
    • 1:$0.1100
    BSS139 H6327
    DISTI # 726-BSS139H6327
    Infineon Technologies AGMOSFET N-Ch 250V 30mA SOT-23-3
    RoHS: Compliant
    21822
    • 1:$0.4100
    • 10:$0.3460
    • 100:$0.2110
    • 1000:$0.1630
    • 3000:$0.1390
    BSS139H6327XTSA1
    DISTI # 726-BSS139H6327XTSA
    Infineon Technologies AGMOSFET N-Ch 250V 30mA SOT-23-3
    RoHS: Compliant
    7612
    • 1:$0.4100
    • 10:$0.3460
    • 100:$0.2110
    • 1000:$0.1630
    • 3000:$0.1390
    BSS139H6327XT
    DISTI # 726-BSS139H6327XTSA1
    Infineon Technologies AGMOSFET N-Ch 250V 30mA SOT-23-3
    RoHS: Compliant
    3251
    • 1:$0.4100
    • 10:$0.3460
    • 100:$0.2110
    • 1000:$0.1630
    • 3000:$0.1390
    • 9000:$0.1300
    • 24000:$0.1230
    • 45000:$0.1200
    BSS139H6327XTSA1
    DISTI # 3545770P
    Infineon Technologies AGMOSFET N-CHANNEL 250V 0.1A SOT23, RL6606
    • 320:£0.1400
    • 160:£0.2000
    • 80:£0.2400
    • 40:£0.2600
    BSS139H6327XTSA1
    DISTI # 3545770
    Infineon Technologies AGMOSFET N-CHANNEL 250V 0.1A SOT23, EA1196
    • 320:£0.1400
    • 160:£0.2000
    • 80:£0.2400
    • 40:£0.2600
    • 1:£1.9800
    BSS139H6327XTSA1
    DISTI # BSS139H6327XTSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,250V,0.1A,0.36W,SOT232360
    • 1000:$0.1011
    • 500:$0.1086
    • 100:$0.1250
    • 10:$0.1565
    • 3:$0.2286
    BSS139H6327XTSA1
    DISTI # BSS139
    Infineon Technologies AGN-Ch 250V 0,04A 0,36W 100R SOT23
    RoHS: Compliant
    5300
    • 100:€0.1210
    • 500:€0.0910
    • 3000:€0.0810
    • 6000:€0.0775
    BSS139H6327XTSA1
    DISTI # C1S322000233218
    Infineon Technologies AGTrans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R
    RoHS: Compliant
    4150
    • 1000:$0.1390
    • 10:$0.3030
    BSS139H6327XTSA1
    DISTI # XSKDRABV0052202
    Infineon Technologies AG 
    RoHS: Compliant
    21005 in Stock0 on Order
    • 21005:$0.1187
    • 6000:$0.1271
    BSS139H6327XTSA1
    DISTI # 2432718
    Infineon Technologies AGMOSFET, N CH, 250V, 0.1A, SOT-23-315481
    • 500:£0.1270
    • 250:£0.1450
    • 100:£0.1640
    • 25:£0.2920
    • 5:£0.3060
    Сурет Бөлім № Сипаттама
    INA282AIDGKT

    Mfr.#: INA282AIDGKT

    OMO.#: OMO-INA282AIDGKT

    Current & Power Monitors & Regulators 0-drift Current Shunt Monitor-50V gain
    SN74LVC1G126DBVR

    Mfr.#: SN74LVC1G126DBVR

    OMO.#: OMO-SN74LVC1G126DBVR

    Buffers & Line Drivers Single Bus Buffer
    ES1D

    Mfr.#: ES1D

    OMO.#: OMO-ES1D

    Rectifiers 1.0a Rectifier UF Recovery
    SN74AHC1G08DCKRG4

    Mfr.#: SN74AHC1G08DCKRG4

    OMO.#: OMO-SN74AHC1G08DCKRG4

    Logic Gates Single 2-Input
    N3793-6202RB

    Mfr.#: N3793-6202RB

    OMO.#: OMO-N3793-6202RB

    Headers & Wire Housings 10P STRT SHORT PIN SOLDER TAIL 30u GOLD
    1734595-6

    Mfr.#: 1734595-6

    OMO.#: OMO-1734595-6

    Headers & Wire Housings 6 POS HDR VERT SMT 1.0mm
    1734595-2

    Mfr.#: 1734595-2

    OMO.#: OMO-1734595-2

    Headers & Wire Housings 2 POS HDR VERT SMT 1.0mm
    INA282AIDGKT

    Mfr.#: INA282AIDGKT

    OMO.#: OMO-INA282AIDGKT-TEXAS-INSTRUMENTS

    Current & Power Monitors & Regulators -14V to +80V, Bi-Directional, High Accuracy, Low- or High-Side, Voltage Output Current Shunt Monitor 8-VSSOP -40 to 125
    N3793-6202RB

    Mfr.#: N3793-6202RB

    OMO.#: OMO-N3793-6202RB-3M

    Headers & Wire Housings 10P STRT SHORT PIN SOLDER TAIL 30u GOLD
    SN74LVC1G126DBVR

    Mfr.#: SN74LVC1G126DBVR

    OMO.#: OMO-SN74LVC1G126DBVR-TEXAS-INSTRUMENTS

    Buffers & Line Drivers Single Bus Buffe
    Қол жетімділік
    Қор:
    631
    Тапсырыс бойынша:
    2614
    Саны енгізіңіз:
    BSS139H6327XTSA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    0,41 $
    0,41 $
    10
    0,35 $
    3,46 $
    100
    0,21 $
    21,10 $
    1000
    0,16 $
    163,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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