We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSF134N10NJ3GXUMA1 DISTI # BSF134N10NJ3GXUMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSF134N10NJ3GXUMA1 DISTI # BSF134N10NJ3GXUMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSF134N10NJ3GXUMA1 DISTI # BSF134N10NJ3GXUMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSF134N10NJ3GXUMA1 DISTI # BSF134N10NJ3GXUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R - Tape and Reel (Alt: BSF134N10NJ3GXUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSF134N10NJ3GXUMA1 DISTI # 50Y1817 | Infineon Technologies AG | MOSFET Transistor, N Channel, 40 A, 100 V, 0.0122 ohm, 10 V, 2.7 V RoHS Compliant: Yes | 0 | |
| BSF134N10NJ3G | Infineon Technologies AG | Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 7476 |
|
| BSF134N10NJ3GXUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 33700 |
|
| BSF134N10NJ3 G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSF134N10NJ3GXUMA1536 | Infineon Technologies AG | RoHS: Not Compliant | 15000 |
|
| BSF134N10NJ3 G DISTI # 726-BSF134N10NJ3G | Infineon Technologies AG | MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 RoHS: Compliant | 4816 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSF134N10NJ3 G OMO.#: OMO-BSF134N10NJ3-G |
MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 |
|
|
Mfr.#: BSF134N10NJ3GXUMA1 OMO.#: OMO-BSF134N10NJ3GXUMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: BSF134N10NJ3G OMO.#: OMO-BSF134N10NJ3G-1190 |
Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSF134N10NJ3GXUMA1536 |
Жаңа және түпнұсқа |
|
Mfr.#: BSF134N10NJ3GXUMA1 |
MOSFET N-CH 100V 9A WDSON-2 |
|
|
Mfr.#: BSF134N10NJ3 G OMO.#: OMO-BSF134N10NJ3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 |
