S25FL128SDSMFA003

S25FL128SDSMFA003
Mfr. #:
S25FL128SDSMFA003
Өндіруші:
Cypress Semiconductor
Сипаттама:
NOR Flash Nor
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
S25FL128SDSMFA003 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
S25FL128SDSMFA003 Көбірек ақпарат S25FL128SDSMFA003 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Кипарис жартылай өткізгіш
Өнім санаты:
НЕМЕСЕ Flash
RoHS:
Y
Орнату стилі:
SMD/SMT
Пакет/қорап:
SOIC-16
Серия:
S25FL128S
Жад өлшемі:
128 Mbit
Максималды сағат жиілігі:
80 MHz
Интерфейс түрі:
SPI
Ұйымдастыру:
16 M x 8
Уақыт түрі:
Асинхронды
Деректер шинасының ені:
8 bit
Қоректендіру кернеуі - Мин:
2.7 V
Қоректендіру кернеуі - Макс:
3.6 V
Жабдықтау тогы - Макс:
100 mA
Ең төменгі жұмыс температурасы:
- 40 C
Максималды жұмыс температурасы:
+ 85 C
Біліктілік:
AEC-Q100
Қаптама:
Ролик
Жылдамдық:
80 MHz
Бренд:
Кипарис жартылай өткізгіш
Ылғалға сезімтал:
Иә
Өнім түрі:
НЕМЕСЕ Flash
Зауыттық буманың саны:
1450
Ішкі санат:
Жад және деректерді сақтау
Сауда атауы:
MirrorBit
Tags
S25FL128SDSM, S25FL128SDS, S25FL128SD, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
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Mfr.#: S25FL128LAGMFM013

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Mfr.#: S25FL128SAGMFIG01

OMO.#: OMO-S25FL128SAGMFIG01-CYPRESS-SEMICONDUCTOR

IC FLASH 128M SPI 133MHZ 16SOIC
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
3500
Саны енгізіңіз:
S25FL128SDSMFA003 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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