SI3590DV-T1-GE3

SI3590DV-T1-GE3
Mfr. #:
SI3590DV-T1-GE3
Өндіруші:
Vishay / Siliconix
Сипаттама:
MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
SI3590DV-T1-GE3 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3590DV-T1-GE3 DatasheetSI3590DV-T1-GE3 Datasheet (P4-P6)SI3590DV-T1-GE3 Datasheet (P7-P9)SI3590DV-T1-GE3 Datasheet (P10-P12)SI3590DV-T1-GE3 Datasheet (P13)
ECAD Model:
Көбірек ақпарат:
SI3590DV-T1-GE3 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Вишай
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TSOP-6
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арнасы, P-арнасы
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
3 A, 2 A
Rds On - ағызу көзіне қарсылық:
77 mOhms, 170 mOhms
Vgs th - Gate-Source шекті кернеуі:
600 mV
Vgs - Шлюз көзі кернеуі:
12 V
Qg - қақпа заряды:
4.5 nC, 6 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
1.15 W
Конфигурация:
Қосарлы
Арна режимі:
Жақсарту
Сауда атауы:
TrenchFET
Қаптама:
Ролик
Серия:
SI3
Транзистор түрі:
1 N-Channel, 1 P-Channel
Бренд:
Вишай / Силиконикс
Форвард өткізгіштік - Мин:
10 S, 5 S
Күз уақыты:
7 ns, 20 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
12 ns, 15 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
13 ns, 20 ns
Қосудың әдеттегі кешігу уақыты:
5 ns, 5 ns
Бөлім # Бүркеншік аттар:
SI3590DV-GE3
Бірлік салмағы:
0.000705 oz
Tags
SI3590DV-T, SI3590D, SI359, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N/P-CH 30V 2.5A 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
***ure Electronics
N- and P-Channel 30-V (D-S) MOSFET
***ied Electronics & Automation
30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
***nell
MOSFET, NP CH, 30V, W DIODE, TSOP6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.062ohm; Power Dissipation Pd:830mW
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Бөлім № Mfg. Сипаттама Қор Бағасы
SI3590DV-T1-GE3
DISTI # V72:2272_09216705
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant
1760
  • 1000:$0.3671
  • 500:$0.4581
  • 250:$0.5280
  • 100:$0.5526
  • 25:$0.7249
  • 10:$0.7986
  • 1:$0.9880
SI3590DV-T1-GE3
DISTI # V36:1790_09216705
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000000:$0.3136
  • 1500000:$0.3138
  • 300000:$0.3265
  • 30000:$0.3469
  • 3000:$0.3502
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3CT-ND
Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4640In Stock
  • 1000:$0.3980
  • 500:$0.4975
  • 100:$0.6293
  • 10:$0.8210
  • 1:$0.9300
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3DKR-ND
Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4640In Stock
  • 1000:$0.3980
  • 500:$0.4975
  • 100:$0.6293
  • 10:$0.8210
  • 1:$0.9300
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3TR-ND
Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.3059
  • 15000:$0.3140
  • 6000:$0.3260
  • 3000:$0.3502
SI3590DV-T1-GE3
DISTI # 33699431
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant
9000
  • 3000:$0.2700
SI3590DV-T1-GE3
DISTI # 32404506
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant
1760
  • 22:$0.9880
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R (Alt: SI3590DV-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1000:€0.3489
  • 500:€0.3559
  • 100:€0.3609
  • 50:€0.3749
  • 25:€0.4059
  • 10:€0.4719
  • 1:€0.6929
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3590DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2939
  • 18000:$0.3029
  • 12000:$0.3109
  • 6000:$0.3239
  • 3000:$0.3339
SI3590DV-T1-GE3
DISTI # 35R0053
Vishay IntertechnologiesDUAL N/P CH MOSFET, 30V, 2A, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes0
  • 50000:$0.2970
  • 30000:$0.3110
  • 20000:$0.3340
  • 10000:$0.3570
  • 5000:$0.3870
  • 1:$0.3960
SI3590DV-T1-GE3
DISTI # 64T4059
Vishay IntertechnologiesMOSFET Transistor, N and P Channel, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V RoHS Compliant: Yes5522
  • 500:$0.5060
  • 250:$0.5530
  • 100:$0.5990
  • 50:$0.6560
  • 25:$0.7130
  • 10:$0.7700
  • 1:$0.9500
SI3590DV-T1-GE3
DISTI # 70459525
Vishay Siliconix30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.4920
  • 6000:$0.4650
SI3590DV-T1-GE3
DISTI # 781-SI3590DV-GE3
Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
RoHS: Compliant
8483
  • 1:$0.9100
  • 10:$0.7330
  • 100:$0.5560
  • 500:$0.4600
  • 1000:$0.3680
  • 3000:$0.3330
  • 6000:$0.3100
  • 9000:$0.2990
SI3590DV-T1-GE3
DISTI # 2056715
Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP616298
  • 500:£0.3580
  • 250:£0.3960
  • 100:£0.4340
  • 10:£0.6250
  • 1:£0.8100
SI3590DV-T1-GE3
DISTI # 2056715
Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP6
RoHS: Compliant
5804
  • 3000:$0.5030
  • 1000:$0.5550
  • 500:$0.6930
  • 100:$0.8390
  • 10:$1.1100
  • 1:$1.3700
SI3590DV-T1-GE3
DISTI # 2056715RL
Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP6
RoHS: Compliant
0
  • 3000:$0.5030
  • 1000:$0.5550
  • 500:$0.6930
  • 100:$0.8390
  • 10:$1.1100
  • 1:$1.3700
SI3590DV-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
RoHS: Compliant
Americas - 3000
  • 3000:$0.2350
  • 6000:$0.2230
  • 12000:$0.2160
  • 18000:$0.2100
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ATTINY817-MN

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LT8608EMSE#PBF

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LP5912-3.3DRVR

Mfr.#: LP5912-3.3DRVR

OMO.#: OMO-LP5912-3-3DRVR

LDO Voltage Regulators LP5912 Low-Noise 500mA LDO
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ABS07AIG-32.768KHZ-9-T

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OMO.#: OMO-ABS07AIG-32-768KHZ-9-T-ABRACON

CRYSTAL 32.768KHZ 9PF SMD
TAJA475K016RNJV

Mfr.#: TAJA475K016RNJV

OMO.#: OMO-TAJA475K016RNJV-AVX

Tantalum Capacitors - Solid SMD 16V 4.7uF 10% 1206 ESR= 4 Ohms
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1991
Саны енгізіңіз:
SI3590DV-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
0,91 $
0,91 $
10
0,73 $
7,33 $
100
0,56 $
55,60 $
500
0,46 $
230,00 $
1000
0,37 $
368,00 $
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