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IRLHS6376TRPBF

IRLHS6376TRPBF
Mfr. #:
IRLHS6376TRPBF
Өндіруші:
Infineon / IR
Сипаттама:
MOSFET 30V 1 N-CH HEXFET 2.8nC
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRLHS6376TRPBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLHS6376TRPBF DatasheetIRLHS6376TRPBF Datasheet (P4-P6)IRLHS6376TRPBF Datasheet (P7-P9)
ECAD Model:
Көбірек ақпарат:
IRLHS6376TRPBF Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PQFN-6
Арналар саны:
2 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
3.6 A
Rds On - ағызу көзіне қарсылық:
63 mOhms
Vgs - Шлюз көзі кернеуі:
12 V
Qg - қақпа заряды:
2.8 nC
Pd - қуаттың шығыны:
1.5 W
Конфигурация:
Қосарлы
Қаптама:
Ролик
Биіктігі:
0.9 mm
Ұзындығы:
2 mm
Транзистор түрі:
2 N-Channel
Ені:
2 mm
Бренд:
Infineon / IR
Өнім түрі:
MOSFET
Зауыттық буманың саны:
4000
Ішкі санат:
MOSFETs
Бөлім # Бүркеншік аттар:
SP001573000
Tags
IRLHS6376TRP, IRLHS6376T, IRLHS637, IRLHS63, IRLHS6, IRLHS, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***et Europe
Transistor MOSFET Array Dual N-CH 30V 3.4A 6-Pin PQFN T/R
***p One Stop Japan
Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch
***ment14 APAC
DUAL N CH, 30V, 3.6A, PQFN-6; Transistor; DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V
Dual PQFN HEXFET® Power MOSFETs
Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Бөлім № Mfg. Сипаттама Қор Бағасы
IRLHS6376TRPBF
DISTI # V72:2272_13889594		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant		8516
  • 6000:$0.1715
  • 3000:$0.1971
  • 1000:$0.1993
  • 500:$0.2471
  • 250:$0.2499
  • 100:$0.2527
  • 25:$0.3654
  • 10:$0.3701
  • 1:$0.4268
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 30V 3.6A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3049In Stock
  • 1000:$0.2894
  • 500:$0.3667
  • 100:$0.4903
  • 10:$0.6450
  • 1:$0.7600
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFDKR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 3.6A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3049In Stock
  • 1000:$0.2894
  • 500:$0.3667
  • 100:$0.4903
  • 10:$0.6450
  • 1:$0.7600
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFTR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 3.6A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.2585
IRLHS6376TRPBF
DISTI # 27507049		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant		12000
  • 40000:$0.1285
  • 24000:$0.1324
  • 16000:$0.1353
  • 8000:$0.1391
  • 4000:$0.1429
IRLHS6376TRPBF
DISTI # 26196122		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant		8516
  • 6000:$0.1715
  • 3000:$0.1971
  • 1000:$0.1993
  • 500:$0.2471
  • 250:$0.2499
  • 100:$0.2527
  • 42:$0.3654
IRLHS6376TRPBF
DISTI # 30605990		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant		3900
  • 1000:$0.2371
  • 500:$0.2576
  • 100:$0.3047
  • 54:$0.4718
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRLHS6376TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 4000
  • 4000:$0.1489
  • 8000:$0.1449
  • 16000:$0.1409
  • 24000:$0.1379
  • 40000:$0.1339
IRLHS6376TRPBF
DISTI # SP001573000		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R (Alt: SP001573000)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2199
  • 8000:€0.1709
  • 16000:€0.1399
  • 24000:€0.1179
  • 40000:€0.1099
IRLHS6376TRPBF
DISTI # 91Y4786		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,RoHS Compliant: Yes0
  • 1:$0.6000
  • 10:$0.4930
  • 25:$0.4290
  • 50:$0.3650
  • 100:$0.3010
  • 250:$0.2780
  • 500:$0.2550
  • 1000:$0.2320
IRLHS6376TRPBF.
DISTI # 27AC6942		Infineon Technologies AGTransistor Polarity:Dual N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:1.5W RoHS Compliant: Yes0
    IRLHS6376TRPBF
    DISTI # 942-IRLHS6376TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 2.8nC
    RoHS: Compliant    		19668
    • 1:$0.6000
    • 10:$0.4930
    • 100:$0.3010
    • 1000:$0.2320
    • 4000:$0.1980
    IRLHS6376TRPBFInfineon Technologies AGDual N-Channel 30 V 63 mOhm 2.8 nC HEXFET Power Mosfet - PQFN 2 x 2 mm
    RoHS: Compliant    		4000Reel
    • 4000:$0.1520
    IRLHS6376TRPBF
    DISTI # 9155092P    		Infineon Technologies AGMOSFET DUAL N-CH HEXFET 30V 3.6A PQFN8, RL8000
    • 200:£0.0860
    IRLHS6376TRPBF
    DISTI # 2579953    		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8
    RoHS: Compliant    		2640
    • 5:£0.4260
    • 25:£0.2540
    • 100:£0.2300
    • 250:£0.1920
    • 500:£0.1700
    IRLHS6376TRPBF
    DISTI # C1S322000502260    		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
    RoHS: Compliant    		8516
    • 250:$0.2580
    • 100:$0.2587
    • 25:$0.3709
    • 10:$0.3729
    IRLHS6376TRPBF
    DISTI # C1S322000502251    		Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
    RoHS: Compliant    		3900
    • 1000:$0.1860
    • 500:$0.2020
    • 100:$0.2390
    • 50:$0.2730
    • 10:$0.3930
    IRLHS6376TRPBF
    DISTI # 2579953    		Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8
    RoHS: Compliant    		0
    • 1:$0.9500
    • 10:$0.7810
    • 100:$0.4770
    • 1000:$0.3680
    • 4000:$0.3130
    • 8000:$0.2930
    • 24000:$0.2780
    • 48000:$0.2710
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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1990
    Саны енгізіңіз:
    IRLHS6376TRPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    0,59 $
    0,59 $
    10
    0,49 $
    4,93 $
    100
    0,30 $
    30,10 $
    1000
    0,23 $
    232,00 $
    2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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