FQA160N08

FQA160N08
Mfr. #:
FQA160N08
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET 80V N-Channel QFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FQA160N08 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-3PN-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
80 V
Идентификатор - үздіксіз төгу тогы:
160 A
Rds On - ағызу көзіне қарсылық:
7 mOhms
Vgs - Шлюз көзі кернеуі:
25 V
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
375 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
QFET
Қаптама:
Түтік
Биіктігі:
20.1 mm
Ұзындығы:
16.2 mm
Серия:
FQA160N08
Транзистор түрі:
1 N-Channel
Түрі:
MOSFET
Ені:
5 mm
Бренд:
ON Semiconductor / Fairchild
Форвард өткізгіштік - Мин:
92 S
Күз уақыты:
410 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
970 ns
Зауыттық буманың саны:
450
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
260 ns
Қосудың әдеттегі кешігу уақыты:
85 ns
Бөлім # Бүркеншік аттар:
FQA160N08_NL
Бірлік салмағы:
0.183425 oz
Tags
FQA16, FQA1, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 80 V, 160 A, 7 mΩ, TO-3P
***Yang
Trans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube
***ure Electronics
FQA Series 80 V 160 A 375 W Through Hole N-Channel QFet® Mosfet - TO-3PN
***r Electronics
Power Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
80V 160A 5.6m´Î@10V80A 375W 4V@250uA 530pF@25V N Channel 6.1nF@25V 225nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:170A; On Resistance, Rds(on):0.0056ohm; Package/Case:D2-PAK; Power Dissipation, Pd:375W; Drain Source On Resistance @ 10V:0.0056ohm ;RoHS Compliant: No
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
***ure Electronics
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ow.cn
Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes
***ure Electronics
Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
***(Formerly Allied Electronics)
MOSFET, N Ch., 100V, 127A, 6 MOHM, 120 NC QG, TO-247AC, Pb-Free
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:134A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:560A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package
***ow.cn
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
***ical
Trans MOSFET N-CH 100V 130A Automotive 3-Pin(3+Tab) TO-262 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET,N CH,100V,75A,TO262; Continuous Drain Current Id:130A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
***ure Electronics
N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB
***Yang
Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Бөлім № Mfg. Сипаттама Қор Бағасы
FQA160N08
DISTI # 26637361
ON Semiconductor80V N-CHANNEL QFET10800
  • 2500:$2.9410
  • 1000:$3.0515
  • 500:$3.5020
  • 450:$3.8420
FQA160N08
DISTI # FQA160N08-ND
ON SemiconductorMOSFET N-CH 80V 160A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$4.9676
FQA160N08
DISTI # FQA160N08
ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA160N08)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$3.0900
  • 900:$3.0900
  • 1800:$3.0900
  • 2700:$2.9900
  • 4500:$2.8900
FQA160N08
DISTI # FQA160N08
ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA160N08)
RoHS: Compliant
Min Qty: 450
Asia - 0
    FQA160N08
    DISTI # FQA160N08
    ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FQA160N08)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1:€3.6900
    • 10:€3.3900
    • 25:€3.1900
    • 50:€3.0900
    • 100:€2.9900
    • 500:€2.8900
    • 1000:€2.6900
    FQA160N08
    DISTI # 512-FQA160N08
    ON SemiconductorMOSFET 80V N-Channel QFET
    RoHS: Compliant
    345
    • 1:$6.3200
    • 10:$5.7200
    • 25:$5.4500
    • 100:$4.7300
    • 250:$4.5200
    • 500:$4.1200
    • 1000:$3.5900
    FQA160N08Fairchild Semiconductor CorporationPower Field-Effect Transistor, 160A I(D), 80V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    21000
    • 1000:$5.6600
    • 500:$5.9600
    • 100:$6.2100
    • 25:$6.4700
    • 1:$6.9700
    FQA160N08
    DISTI # 6714900P
    ON SemiconductorMOSFET N-CHANNEL 80V 160A TO-3P(N), TU25
    • 25:£4.0100
    • 100:£3.6000
    • 250:£3.2900
    • 500:£3.0000
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    Қол жетімділік
    Қор:
    303
    Тапсырыс бойынша:
    2286
    Саны енгізіңіз:
    FQA160N08 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    6,00 $
    6,00 $
    10
    5,09 $
    50,90 $
    100
    4,42 $
    442,00 $
    250
    4,19 $
    1 047,50 $
    500
    3,76 $
    1 880,00 $
    1000
    3,17 $
    3 170,00 $
    2500
    3,01 $
    7 525,00 $
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