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IRF5M5210

IRF5M5210
Mfr. #:
IRF5M5210
Өндіруші:
IR
Сипаттама:
Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRF5M5210)
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRF5M5210 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші
IR
Өнім санаты
IC чиптері
Tags
IRF5M5, IRF5M, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ure Electronics
Single P-Channel 100 V 125 W 180 nC Hexfet Power Mosfet Flange Mount - TO-254AA
***ineon SCT
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package, TO-254AA-3
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC
***ure Electronics
Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V
***ure Electronics
Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V
*** Source Electronics
Trans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 36A TO-220AB
***ure Electronics
Single N-Channel 100 V 26.5 mOhm 42 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 92 W
*** Stop Electro
Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:26.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220
***ure Electronics
N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220
***enic
100V 35A 45´Î@10V15A 115W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-Channel 100V - 0.030 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) POWER MOSFET
***ure Electronics
N-Channel 100 V .035 Ohm Flange Mount STripFET™ II Power MosFet - TO-220
***ical
Trans MOSFET N-CH 100V 40A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 115 W
***eco
Transistor N-Channel Power MOSFET 100V 40A
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:100V; On Resistance Rds(on):0.035ohm;
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: SOT-78B; Avalanche Single Pulse Energy Eas: 13mJ; Capacitance Ciss Typ: 1550pF; Current Id Max: 40A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; On State resistance @ Vgs = 10V: 35mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pin Configuration: a; Power Dissipation Ptot Max: 115W; Pulse Current Idm: 160A; Reverse Recovery Time trr Typ: 160ns; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V; Voltage Vgs th Min: 2V
***ineon
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
***ernational Rectifier
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
***et
Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3
***ark
N Channel Mosfet, 100V, 38A, To-3
***S
French Electronic Distributor since 1988
Бөлім № Mfg. Сипаттама Қор Бағасы
IRF5M5210
DISTI # IRF5M5210		Infineon Technologies AGTrans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: IRF5M5210)
RoHS: Not Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 50:$111.0900
  • 52:$107.0900
  • 102:$97.6900
  • 250:$87.4900
  • 500:$85.9900
IRF5M5210SCX
DISTI # IRF5M5210SCX		Infineon Technologies AGTrans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA TX Level Screening - Bulk (Alt: IRF5M5210SCX)
RoHS: Not Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 50:$137.3900
  • 52:$132.3900
  • 102:$121.1900
  • 250:$111.1900
  • 500:$109.2900
IRF5M5210SCV
DISTI # IRF5M5210SCV		Infineon Technologies AGTrans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA TXV Level Screening - Bulk (Alt: IRF5M5210SCV)
RoHS: Not Compliant
Min Qty: 50
Container: Bulk		Americas - 0
  • 50:$210.0900
  • 52:$202.4900
  • 102:$185.1900
  • 250:$165.6900
  • 500:$162.6900
Сурет Бөлім № Сипаттама
IRF5M4905SCX

Mfr.#: IRF5M4905SCX

OMO.#: OMO-IRF5M4905SCX-1190

 Trans MOSFET P-CH 55V 35A 3-Pin TO-254AA TX Level Screening - Bulk (Alt: IRF5M4905SCX)
IRF540NPBF.

Mfr.#: IRF540NPBF.

OMO.#: OMO-IRF540NPBF--1190

 PLANAR_MOSFETS , ROHS COMPLIANT: YES
IRF520NS,IRF520NSTRPBF,F

Mfr.#: IRF520NS,IRF520NSTRPBF,F

OMO.#: OMO-IRF520NS-IRF520NSTRPBF-F-1190

 Жаңа және түпнұсқа
IRF522PBF

Mfr.#: IRF522PBF

OMO.#: OMO-IRF522PBF-1190

 Жаңа және түпнұсқа
IRF52N15DPBF

Mfr.#: IRF52N15DPBF

OMO.#: OMO-IRF52N15DPBF-1190

 Жаңа және түпнұсқа
IRF530PBF IRF530

Mfr.#: IRF530PBF IRF530

OMO.#: OMO-IRF530PBF-IRF530-1190

 Жаңа және түпнұсқа
IRF540M

Mfr.#: IRF540M

OMO.#: OMO-IRF540M-1190

 Жаңа және түпнұсқа
IRF540NSTRPBF

Mfr.#: IRF540NSTRPBF

OMO.#: OMO-IRF540NSTRPBF-1190

 Жаңа және түпнұсқа
IRF5800PBF

Mfr.#: IRF5800PBF

OMO.#: OMO-IRF5800PBF-1190

 Жаңа және түпнұсқа
IRF5850TR

Mfr.#: IRF5850TR

OMO.#: OMO-IRF5850TR-INFINEON-TECHNOLOGIES

 MOSFET 2P-CH 20V 2.2A 6-TSOP
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1000
Саны енгізіңіз:
IRF5M5210 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
128,98 $
128,98 $
10
122,54 $
1 225,36 $
100
116,09 $
11 608,65 $
500
109,64 $
54 818,65 $
1000
103,19 $
103 188,00 $
-ден бастаңыз
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