We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| HUF75309D3S DISTI # HUF75309D3S-ND | ON Semiconductor | MOSFET N-CH 55V 19A DPAK RoHS: Compliant Min Qty: 1800 Container: Tube | Limited Supply - Call | |
| HUF75309D3ST DISTI # HUF75309D3ST-ND | ON Semiconductor | MOSFET N-CH 55V 19A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| HUF75309D3ST_NL DISTI # HUF75309D3ST_NL | ON Semiconductor | - Bulk (Alt: HUF75309D3ST_NL) RoHS: Not Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| HUF75309D3 DISTI # 512-HUF75309D3 | ON Semiconductor | MOSFET DISC BY MFG 2/02 RoHS: Not compliant | 0 | |
| HUF75309D3S DISTI # 512-HUF75309D3S | ON Semiconductor | MOSFET 19a 55V N-Channel UltraFET RoHS: Compliant | 0 | |
| HUF75309D3ST DISTI # 512-HUF75309D3ST | ON Semiconductor | MOSFET 19a 55V N-Channel UltraFET RoHS: Compliant | 0 | |
| HUF75309D3S | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 2466 |
|
| HUF75309D3ST_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 597 |
|
| HUF75309D3 | Harris Semiconductor | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 975 |
|
| HUF75309D3S | Harris Semiconductor | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 14180 |
|
| HUF75309D3S | HARTING Technology Group | RoHS: Not Compliant | 1570 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: UF7530 OMO.#: OMO-UF7530-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: UF75309D3 OMO.#: OMO-UF75309D3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: UF75309D3S OMO.#: OMO-UF75309D3S-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: UF75309P3 OMO.#: OMO-UF75309P3-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: UF7560 OMO.#: OMO-UF7560-1190 |
Жаңа және түпнұсқа |