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MSC060SMA070S

MSC060SMA070S
Mfr. #:
MSC060SMA070S
Өндіруші:
Microchip / Microsemi
Сипаттама:
MOSFET UNRLS, FG, SIC MOSFET, TO-268
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
MSC060SMA070S Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
MSC060SMA070S Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Микрочип
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
SiC
Орнату стилі:
SMD/SMT
Пакет/қорап:
D3PAK-3
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
700 V
Rds On - ағызу көзіне қарсылық:
69 mOhms
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Қаптама:
Түтік
Бренд:
Микрочип / Microsemi
Өнім түрі:
MOSFET
Зауыттық буманың саны:
1
Ішкі санат:
MOSFETs
Tags
MSC06, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 700V D3PAK
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Сурет Бөлім № Сипаттама
MSC060SMA070S

Mfr.#: MSC060SMA070S

OMO.#: OMO-MSC060SMA070S

 MOSFET UNRLS, FG, SIC MOSFET, TO-268
MSC0603C-4N3J

Mfr.#: MSC0603C-4N3J

OMO.#: OMO-MSC0603C-4N3J-1190

 Жаңа және түпнұсқа
MSC0603C-R15J

Mfr.#: MSC0603C-R15J

OMO.#: OMO-MSC0603C-R15J-1190

 Жаңа және түпнұсқа
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
5000
Саны енгізіңіз:
MSC060SMA070S ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
15,74 $
15,74 $
5
14,93 $
74,65 $
10
14,38 $
143,80 $
25
13,82 $
345,50 $
50
13,30 $
665,00 $
100
12,22 $
1 222,00 $
250
11,77 $
2 942,50 $
500
11,36 $
5 680,00 $
1000
10,42 $
10 420,00 $
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