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FDMC86012

FDMC86012
Mfr. #:
FDMC86012
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET 30V N-Channel PowerTrench MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FDMC86012 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
FDMC86012 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
Power-33-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
88 A
Rds On - ағызу көзіне қарсылық:
2.7 mOhms
Vgs th - Gate-Source шекті кернеуі:
1 V
Vgs - Шлюз көзі кернеуі:
12 V
Qg - қақпа заряды:
27 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
54 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
PowerTrench қуат клипі
Қаптама:
Ролик
Биіктігі:
0.8 mm
Ұзындығы:
3.3 mm
Серия:
FDMC86012
Транзистор түрі:
1 N-Channel
Ені:
3.3 mm
Бренд:
ON Semiconductor / Fairchild
Форвард өткізгіштік - Мин:
144 S
Күз уақыты:
8 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
11 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
43 ns
Қосудың әдеттегі кешігу уақыты:
11 ns
Бірлік салмағы:
0.005386 oz
Tags
FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power Trench® MOSFET 30V, 88A, 2.7mΩ
***r Electronics
Power Field-Effect Transistor, 23A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
***emi
N-Channel PowerTrench® MOSFET 30V, 131A, 2.5mΩ
***r Electronics
Power Field-Effect Transistor, 26A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.
***ure Electronics
N-Channel 30 V 42 A 2.4 mOhm Surface Mount PowerTrench® SyncFETTM - Power56
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***et
TRANS MOSFET N-CH 30V 28A 8PIN PWR 56
***emi
30V N-Channel PowerTrench® SyncFET™
***S
French Electronic Distributor since 1988
***rchild Semiconductor
The FDMS8660AS has been designed to minimize losses inpower conversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance. Thisdevice has the added benefit of an efficient monolithic Schottkybody diode.
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 124 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ark
Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8
***p One Stop
Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***ure Electronics
Single N-Channel 30 V 2.9 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
FDMC86012
DISTI # V36:1790_06337905		ON SemiconductorRP5 30V/12V NCH POWER TRENCH M0
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      FDMC86012
      DISTI # FDMC86012CT-ND      		ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		5090In Stock
      • 1000:$1.3143
      • 500:$1.5862
      • 100:$2.0394
      • 10:$2.5380
      • 1:$2.8100
      FDMC86012
      DISTI # FDMC86012DKR-ND      		ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		5090In Stock
      • 1000:$1.3143
      • 500:$1.5862
      • 100:$2.0394
      • 10:$2.5380
      • 1:$2.8100
      FDMC86012
      DISTI # FDMC86012TR-ND      		ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		3000In Stock
      • 6000:$1.1440
      • 3000:$1.1880
      FDMC86012
      DISTI # FDMC86012      		ON SemiconductorTrans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R (Alt: FDMC86012)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.9459
      • 18000:€1.0129
      • 12000:€1.0909
      • 6000:€1.1819
      • 3000:€1.4189
      FDMC86012
      DISTI # FDMC86012      		ON SemiconductorTrans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86012)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.9869
      • 18000:$1.0119
      • 12000:$1.0249
      • 6000:$1.0379
      • 3000:$1.0449
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      DISTI # 63W2855      		ON SemiconductorFET 30V 2.7 MOHM PQFN33 / REEL0
      • 9000:$1.0400
      • 1:$1.0800
      FDMC86012
      DISTI # 512-FDMC86012      		ON SemiconductorMOSFET 30V N-Channel PowerTrench MOSFET
      RoHS: Compliant      		5214
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.6000
      • 500:$1.4000
      • 1000:$1.1600
      • 3000:$1.0800
      • 6000:$1.0400
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      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      1987
      Саны енгізіңіз:
      FDMC86012 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      2,35 $
      2,35 $
      10
      2,00 $
      20,00 $
      100
      1,60 $
      160,00 $
      500
      1,40 $
      700,00 $
      1000
      1,16 $
      1 160,00 $
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