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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FMI16N50ES DISTI # FE0000000000984 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI16N50ESSC DISTI # FE0000000004526 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI16N50ESC DISTI # FE0000000004525 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
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Mfr.#: FMI161JZ OMO.#: OMO-FMI161JZ-1190 |
Жаңа және түпнұсқа |
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Mfr.#: FMI16N50E OMO.#: OMO-FMI16N50E-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI16N50ES OMO.#: OMO-FMI16N50ES-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI16N60E OMO.#: OMO-FMI16N60E-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMI16N60ES OMO.#: OMO-FMI16N60ES-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |