SI4425DDY-T1-GE3

Mfr. #:: SI4425DDY-T1-GE3
Өндіруші:: Vishay / Siliconix
Сипаттама:: MOSFET -30V Vds 20V Vgs SO-8
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: SI4425DDY-T1-GE3 Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4425DDY-T1-GE3 Datasheet SI4425DDY-T1-GE3 Datasheet (P4-P6)SI4425DDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Көбірек ақпарат:: SI4425DDY-T1-GE3 Көбірек ақпарат

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Вишай

Өнім санаты:: MOSFET

RoHS:: E

Технология:: Си

Орнату стилі:: SMD/SMT

Пакет/қорап:: SO-8

Арналар саны:: 1 Channel

Транзистордың полярлығы:: P-арна

Vds - ағызу көзінің бұзылу кернеуі:: 30 V

Идентификатор - үздіксіз төгу тогы:: 19.7 A

Rds On - ағызу көзіне қарсылық:: 9.8 mOhms

Vgs th - Gate-Source шекті кернеуі:: 1.2 V

Vgs - Шлюз көзі кернеуі:: 10 V

Qg - қақпа заряды:: 53 nC

Ең төменгі жұмыс температурасы:: - 55 C

Максималды жұмыс температурасы:: + 150 C

Pd - қуаттың шығыны:: 5.7 W

Конфигурация:: Бойдақ

Арна режимі:: Жақсарту

Сауда атауы:: TrenchFET

Қаптама:: Ролик

Серия:: SI4

Транзистор түрі:: 1 P-Channel

Бренд:: Вишай / Силиконикс

Форвард өткізгіштік - Мин:: 40 S

Күз уақыты:: 9 ns

Өнім түрі:: MOSFET

Көтеру уақыты:: 9 ns

Зауыттық буманың саны:: 2500

Ішкі санат:: MOSFETs

Өшірудің әдеттегі кешігу уақыты:: 42 ns

Қосудың әдеттегі кешігу уақыты:: 12 ns

Бөлім # Бүркеншік аттар:: SI4425DDY-GE3

Бірлік салмағы:: 0.006596 oz

Tags: SI4425DD, SI4425D, SI4425, SI442, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4425DDY-T1-GE3 Сипаттама

***ure Electronics: SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

***ark: P-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes

***ukat: P-Ch 30V 19,7A 2,5W 0,0098R SO8

***ment14 APAC: MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V

SI4425DDY-T1-GE3 Көбірек ақпарат

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
SI4425DDY-T1-GE3 DISTI # V72:2272_07431897	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R RoHS: Compliant	903	500:$0.3994 250:$0.4723 100:$0.4736 25:$0.5800 10:$0.5825 1:$0.6823
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 19.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	98621In Stock	1000:$0.4169 500:$0.5212 100:$0.7036 10:$0.9120 1:$1.0400
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 19.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	98621In Stock	1000:$0.4169 500:$0.5212 100:$0.7036 10:$0.9120 1:$1.0400
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 19.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	97500In Stock	2500:$0.3669
SI4425DDY-T1-GE3 DISTI # 27083125	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R RoHS: Compliant	10000	2500:$0.3866
SI4425DDY-T1-GE3 DISTI # 30331459	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R RoHS: Compliant	903	500:$0.3994 250:$0.4723 100:$0.4736 25:$0.5800 23:$0.5825
SI4425DDY-T1-GE3 DISTI # 30608652	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R RoHS: Compliant	600	250:$0.7433 100:$0.8007 50:$0.9805 10:$1.0442 7:$3.8123
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4425DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$0.3339 5000:$0.3239 10000:$0.3109 15000:$0.3029 25000:$0.2939
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R (Alt: SI4425DDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4425DDY-T1-GE3 DISTI # SI4425DDY-T1-GE3	Vishay Intertechnologies	Transistor MOSFET P-CH 30V 19.7A 8-Pin SOIC (Alt: SI4425DDY-T1-GE3) RoHS: Compliant Min Qty: 2500	Europe - 0	2500:€0.4949 5000:€0.3379 10000:€0.2909 15000:€0.2679 25000:€0.2499
SI4425DDY-T1-GE3 DISTI # 05W6943	Vishay Intertechnologies	Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 05W6943) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.1000 10:$0.8810 25:$0.8100 50:$0.7390 100:$0.6680 250:$0.6110 500:$0.5520
SI4425DDY-T1-GE3 DISTI # 15R5011	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -19.7A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-19.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):8100µohm,Rds(on) Test Voltage Vgs:-10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.3160 2500:$0.3130 5000:$0.3040 10000:$0.2930
SI4425DDY-T1-GE3 DISTI # 05W6943	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -19.7A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-19.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):8100µohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.2V , RoHS Compliant: Yes	1009	1:$1.1000 10:$0.8810 25:$0.8100 50:$0.7390 100:$0.6680 250:$0.6110 500:$0.5520 1000:$0.4620
SI4425DDY-T1-GE3 DISTI # 781-SI4425DDY-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	21422	1:$0.9200 10:$0.7340 100:$0.5570 500:$0.4600 1000:$0.4380 2500:$0.3840
SI4425DDY-T1-GE3	Vishay Intertechnologies	SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8 RoHS: Compliant	22500Reel	2500:$0.4000
SI4425DDY-T1-GE3	Vishay Siliconix	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 13A I(D), 30V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	10	7:$0.6000 1:$0.8000
SI4425DDY-T1-GE3 DISTI # SI4425DDY-GE3	Vishay Intertechnologies	P-Ch 30V 19,7A 2,5W 0,0098R SO8 RoHS: Compliant	1850	50:€0.3180 100:€0.2580 500:€0.2280 2500:€0.2205
SI4425DDY-T1-GE3.	Vishay Intertechnologies	MOSFET 30V, 12 MOHMS@10V	Americas - 2350	25:$0.4640 100:$0.4000 250:$0.3980 500:$0.3600 1000:$0.3550
SI4425DDY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8	Americas - 5000	2500:$0.3230 5000:$0.3050 10000:$0.2950
SI4425BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V 11A 2.5W RoHS: Compliant	Americas -
SI4425DDY-T1-GE3 DISTI # 1779263	Vishay Intertechnologies	MOSFET, P-CH, 30V, 19.7A, SO8 RoHS: Compliant	20653	5:£0.6350 25:£0.5720 100:£0.4290 250:£0.3920 500:£0.3550
SI4425DDY-T1-GE3 DISTI # XSFP00000126798	Vishay Siliconix	RoHS: Compliant	30285	2500:$0.8000 30285:$0.7273
SI4425DDY-T1-GE3 DISTI # C1S806001147793	Vishay Intertechnologies	MOSFETs	600	500:$0.4960 250:$0.5830 100:$0.6280 50:$0.7690 10:$0.8190 1:$2.9900
SI4425DDY-T1-GE3 DISTI # C1S803600844982	Vishay Intertechnologies	MOSFETs RoHS: Compliant	903	250:$0.4702 100:$0.4716 25:$0.5768 10:$0.5792
SI4425DDY-T1-GE3 DISTI # 1779263	Vishay Intertechnologies	MOSFET, P-CH, 30V, 19.7A, SO8 RoHS: Compliant	21074	1:$1.4600 10:$1.1700 100:$0.8810 500:$0.7280 1000:$0.6090 2500:$0.6080

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: OPA192IDBVR OMO.#: OMO-OPA192IDBVR	Precision Amplifiers High Voltage Precision Op Amp
	Mfr.#: BQ24012DRCR OMO.#: OMO-BQ24012DRCR	Battery Management Linear 1-cell Li-Ion Charger
	Mfr.#: 24FC1025T-I/SN OMO.#: OMO-24FC1025T-I-SN	EEPROM 1024K 128K X 8 1.8V 2.5V HI-SPD
	Mfr.#: PESD0603-240 OMO.#: OMO-PESD0603-240	TVS Diodes / ESD Suppressors 0.25pFA 24V 0603 AEC-Q200
	Mfr.#: BSS138 OMO.#: OMO-BSS138	MOSFET SOT-23 N-CH LOGIC
	Mfr.#: 2N7002W OMO.#: OMO-2N7002W	MOSFET N-Chan Enhancement Mode Field Effect
	Mfr.#: TPS62175DQCR OMO.#: OMO-TPS62175DQCR	Switching Voltage Regulators 28V 0.5A Step-Dwn Convrtr w/ SNOOZE Md
	Mfr.#: 12061A102FAT2A OMO.#: OMO-12061A102FAT2A	Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 1000pF C0G 1206 1%
	Mfr.#: OPA192IDBVR OMO.#: OMO-OPA192IDBVR-TEXAS-INSTRUMENTS	IC OP AMP RRIO E-TRIM SOT23-5
	Mfr.#: XFL4020-222MEB OMO.#: OMO-XFL4020-222MEB-1190	Fixed Inductors 2.2uH 20% 8A 23.5mOhms AEC-Q200

Қол жетімділік

Қор:: 18
Тапсырыс бойынша:: 2001
Саны енгізіңіз:

SI4425DDY-T1-GE3 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~0,91 $~~; ~~0,91 $~~

10: ~~0,73 $~~; ~~7,33 $~~

100: ~~0,56 $~~; ~~55,60 $~~

500: ~~0,46 $~~; ~~230,00 $~~

1000: ~~0,37 $~~; ~~368,00 $~~

-ден бастаңыз

SI4425DD 3
SI4425D 14
SI4425 26
SI442 82
SI44 574
SI4 2994

Ең жаңа өнімдер

SIP32101DB Bi-Directional Battery Switch

Vishay Siliconix's SiP32101, SiP32102, and SiP32103 bidirectional switches feature reverse blocking capability to isolate the battery from the system.
Compare SI4425DDY-T1-GE3

SI4425DDY vs SI4425DDYT1GE3 vs SI4425DDYT1GE3CUTTAPE
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
SUM90142E-GE3 ThunderFET® MOSFET

Vishay's SUM90142E-GE3 N-Channel 200 V (D-S) ThunderFET® MOSFET features a maximum 175°C junction temperature.
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.

More Newest Products

SI4425DDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes