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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IXFN55N50 DISTI # V99:2348_15877417 | IXYS Corporation | Trans MOSFET N-CH Si 500V 55A 4-Pin SOT-227B RoHS: Compliant | 10 |
|
| IXFN55N50 DISTI # V36:1790_15877417 | IXYS Corporation | Trans MOSFET N-CH Si 500V 55A 4-Pin SOT-227B RoHS: Compliant | 0 | |
| IXFN55N50F DISTI # V36:1790_14391218 | IXYS Corporation | Trans MOSFET N-CH Si 500V 55A 4-Pin SOT-227B RoHS: Compliant | 0 |
|
| IXFN55N50F DISTI # IXFN55N50F-ND | IXYS Corporation | MOSFET N-CH 500V 55A SOT227B RoHS: Compliant Min Qty: 1 Container: Tube | 98In Stock |
|
| IXFN55N50 DISTI # IXFN55N50-ND | IXYS Corporation | MOSFET N-CH 500V 55A SOT-227B RoHS: Compliant Min Qty: 1 Container: Tube | 51In Stock |
|
| IXFN55N50 DISTI # 29727945 | IXYS Corporation | Trans MOSFET N-CH Si 500V 55A 4-Pin SOT-227B RoHS: Compliant | 10 |
|
| IXFN55N50 DISTI # 14J1692 | IXYS Corporation | MOSFET, N, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:55A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power Dissipation Pd:600W RoHS Compliant: Yes | 0 | |
| IXFN55N50F DISTI # 42M1930 | IXYS Corporation | MOSFET, N, RF, SOT-227B,Drain Source Voltage Vds:500V,Continuous Drain Current Id:55A,Power Dissipation Pd:600W,Operating Frequency Min:-,Operating Frequency Max:500kHz,RF Transistor Case:SOT-227B,No. of Pins:4Pins,MSL:- RoHS Compliant: Yes | 0 | |
| IXFN55N50 DISTI # 747-IXFN55N50 | IXYS Corporation | MOSFET 55 Amps 500V 0.08 Rds RoHS: Compliant | 8 |
|
| IXFN55N50F DISTI # 747-IXFN55N50F | IXYS Corporation | MOSFET IXFN55N50F 500V 55A HIPERFET F-Class HiPerRF Capable MOSFETs RoHS: Compliant | 16 |
|
| IXFN55N50 | IXYS Corporation | 6 | ||
| IXFN55N50 | IXYS Corporation | *** FREE SHIPPING ORDERS OVER $100 *** POWER FIELD-EFFECT TRANSISTOR, 55A I(D), 500V, 0.09OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 20 |
|
| IXFN55N50 DISTI # 4905647 | IXYS Corporation | MOSFET, N, SOT-227B RoHS: Compliant | 0 |
|
| IXFN55N50F DISTI # 1347748 | IXYS Corporation | MOSFET, N, RF, SOT-227B RoHS: Compliant | 0 |
|
| IXFN55N50 DISTI # 4905647 | IXYS Corporation | MOSFET, N, SOT-227B RoHS: Compliant | 0 |
|
| IXFN55N50 DISTI # IXFN55N50 | IXYS Corporation | N-Ch 500V 55A 625W 0,090R SOT227B RoHS: Compliant | 4 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IXFN64N50PD2 OMO.#: OMO-IXFN64N50PD2 |
Discrete Semiconductor Modules 64 Amps 500V |
|
|
Mfr.#: IXFN26N100P OMO.#: OMO-IXFN26N100P |
MOSFET 26 Amps 1000V 0.39 Rds |
|
|
Mfr.#: IXFN32N60 OMO.#: OMO-IXFN32N60 |
MOSFET 32 Amps 600V |
|
Mfr.#: IXFN200N10P |
MOSFET N-CH 100V 200A SOT-227B |
|
|
Mfr.#: IXFN210N30P3 |
MOSFET N-CH 300V 192A SOT-227 |
|
|
Mfr.#: IXFN44N50U3 |
MOSFET N-CH 500V 44A SOT-227B |
|
|
Mfr.#: IXFN70N120SK |
MOSFET N-CH |
|
|
Mfr.#: IXFN34N100 |
MOSFET 34 Amps 1000V 0.28 Rds |
|
|
Mfr.#: IXFN80N50Q2 |
MOSFET 80 Amps 500V 0.06 Rds |
|
|
Mfr.#: IXFN150N10 |
MOSFET 150 Amps 100V |
