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IPW60R070CFD7XKSA1

IPW60R070CFD7XKSA1
Mfr. #:
IPW60R070CFD7XKSA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET HIGH POWER_NEW
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IPW60R070CFD7XKSA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IPW60R070CFD7XKSA1 Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-247-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
600 V
Идентификатор - үздіксіз төгу тогы:
31 A
Rds On - ағызу көзіне қарсылық:
57 mOhms
Vgs th - Gate-Source шекті кернеуі:
3.5 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
67 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
156 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
CoolMOS
Қаптама:
Түтік
Серия:
CoolMOS CFD7
Транзистор түрі:
1 N-Channel
Бренд:
Infineon Technologies
Күз уақыты:
6 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
23 ns
Зауыттық буманың саны:
240
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
99 ns
Қосудың әдеттегі кешігу уақыты:
26 ns
Бөлім # Бүркеншік аттар:
IPW60R070CFD7 SP001617990
Tags
IPW60R070C, IPW60R070, IPW60R07, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3
***ark
Mosfet, N-Ch, 600V, 31A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.057Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Бөлім № Mfg. Сипаттама Қор Бағасы
IPW60R070CFD7XKSA1
DISTI # V99:2348_18786389		Infineon Technologies AGHIGH POWER_NEW230
  • 500:$4.6710
  • 250:$4.9240
  • 100:$5.2050
  • 25:$6.1750
  • 10:$6.4710
  • 1:$7.8650
IPW60R070CFD7XKSA1
DISTI # V36:1790_18786389		Infineon Technologies AGHIGH POWER_NEW0
  • 240000:$3.5240
  • 120000:$3.5290
  • 24000:$4.2970
  • 2400:$5.9060
  • 240:$6.1900
IPW60R070CFD7XKSA1
DISTI # IPW60R070CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		384In Stock
  • 720:$4.9237
  • 240:$5.6543
  • 25:$6.5120
  • 10:$6.8300
  • 1:$7.5600
IPW60R070CFD7XKSA1
DISTI # 32740012		Infineon Technologies AGHIGH POWER_NEW230
  • 2:$7.8650
IPW60R070CFD7XKSA1
DISTI # 33637520		Infineon Technologies AGHIGH POWER_NEW75
  • 3:$3.7891
IPW60R070CFD7XKSA1
DISTI # IPW60R070CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R070CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$3.7900
  • 1440:$3.8900
  • 960:$3.9900
  • 480:$4.1900
  • 240:$4.2900
IPW60R070CFD7XKSA1
DISTI # SP001617990		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 (Alt: SP001617990)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€3.4900
  • 500:€3.5900
  • 100:€3.6900
  • 50:€3.7900
  • 25:€3.9900
  • 10:€4.3900
  • 1:€5.3900
IPW60R070CFD7XKSA1
DISTI # 43AC9330		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes141
  • 500:$4.7300
  • 250:$5.1900
  • 100:$5.4300
  • 50:$5.8500
  • 25:$6.2600
  • 10:$6.5700
  • 1:$7.2600
IPW60R070CFD7XKSA1
DISTI # 726-IPW60R070CFD7XKS		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		7414
  • 1:$7.1900
  • 10:$6.5000
  • 25:$6.2000
  • 100:$5.3800
  • 250:$5.1400
  • 500:$4.6800
IPW60R070CFD7XKSA1
DISTI # 2807983		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247861
  • 100:£4.1500
  • 50:£4.4700
  • 10:£4.7800
  • 5:£5.5400
  • 1:£6.0700
IPW60R070CFD7XKSA1
DISTI # 2807983		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-247
RoHS: Compliant		191
  • 250:$6.0600
  • 100:$6.1700
  • 50:$6.5100
  • 10:$6.8900
  • 5:$7.7900
  • 1:$8.3300
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RC0805JR-070RL

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OMO.#: OMO-B59850C0120A070-EPCOS

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 Жаңа және түпнұсқа
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1990
Саны енгізіңіз:
IPW60R070CFD7XKSA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
7,19 $
7,19 $
10
6,50 $
65,00 $
25
6,20 $
155,00 $
100
5,38 $
538,00 $
250
5,14 $
1 285,00 $
500
4,68 $
2 340,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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