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BSC025N03MSGATMA1

BSC025N03MSGATMA1
Mfr. #:
BSC025N03MSGATMA1
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
BSC025N03MSGATMA1 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC025N03MSGATMA1 DatasheetBSC025N03MSGATMA1 Datasheet (P4-P6)BSC025N03MSGATMA1 Datasheet (P7-P9)BSC025N03MSGATMA1 Datasheet (P10)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
TDSON-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
30 V
Идентификатор - үздіксіз төгу тогы:
40 A
Rds On - ағызу көзіне қарсылық:
6.7 mOhms
Vgs th - Gate-Source шекті кернеуі:
1 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
27 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
35 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
OptiMOS
Қаптама:
Ролик
Биіктігі:
1.27 mm
Ұзындығы:
5.9 mm
Серия:
OptiMOS 3M
Транзистор түрі:
1 N-Channel
Ені:
5.15 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
28 S
Күз уақыты:
2.4 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
3 ns
Зауыттық буманың саны:
5000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
18 ns
Қосудың әдеттегі кешігу уақыты:
4.3 ns
Бөлім # Бүркеншік аттар:
BSC025N03MS BSC25N3MSGXT G SP000311505
Бірлік салмағы:
0.021341 oz
Tags
BSC025N03MSG, BSC025N03M, BSC025, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 74 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:83W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Бөлім № Mfg. Сипаттама Қор Бағасы
BSC025N03MSGATMA1
DISTI # V72:2272_06384635		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4735
  • 3000:$0.4660
  • 1000:$0.4708
  • 500:$0.5734
  • 250:$0.6372
  • 100:$0.6444
  • 25:$0.7919
  • 10:$0.8015
  • 1:$0.9086
BSC025N03MSGATMA1
DISTI # BSC025N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5463In Stock
  • 1000:$0.6176
  • 500:$0.7823
  • 100:$1.0087
  • 10:$1.2760
  • 1:$1.4400
BSC025N03MSGATMA1
DISTI # BSC025N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5463In Stock
  • 1000:$0.6176
  • 500:$0.7823
  • 100:$1.0087
  • 10:$1.2760
  • 1:$1.4400
BSC025N03MSGATMA1
DISTI # BSC025N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.5316
BSC025N03MSGATMA1
DISTI # 31038104		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 10000:$0.4474
  • 5000:$0.4858
BSC025N03MSGATMA1
DISTI # 30729205		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4735
  • 3000:$0.4660
  • 1000:$0.4708
  • 500:$0.5734
  • 250:$0.6372
  • 100:$0.6444
  • 25:$0.7919
  • 18:$0.8015
BSC025N03MSGXT
DISTI # BSC025N03MSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC025N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 5000
  • 5000:$0.4179
  • 10000:$0.4029
  • 20000:$0.3889
  • 30000:$0.3759
  • 50000:$0.3689
BSC025N03MSGATMA1
DISTI # 60R2482		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes1329
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5460
  • 2500:$0.5060
  • 10000:$0.4660
BSC025N03MSGATMA1
DISTI # 726-BSC025N03MSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M
RoHS: Compliant		5237
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5460
BSC025N03MS G
DISTI # 726-BSC025N03MSG		Infineon Technologies AGMOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M
RoHS: Compliant		4623
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7820
  • 500:$0.6910
  • 1000:$0.5460
BSC025N03MSGATMA1
DISTI # BSC025N03MSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,23A,83W,PG-TDSON-84990
  • 1:$0.2300
BSC025N03MSGATMA1
DISTI # 1775433		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		1329
  • 5:£0.5910
  • 25:£0.5380
  • 100:£0.4250
  • 250:£0.4240
  • 500:£0.4230
BSC025N03MSGATMA1
DISTI # C1S322000210776		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		4735
  • 250:$0.5806
  • 100:$0.6451
  • 25:$0.8038
  • 10:$0.8077
BSC025N03MSGATMA1
DISTI # C1S322000470943		Infineon Technologies AGTrans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4730
BSC025N03MSGATMA1
DISTI # 1775433		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		1329
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.2400
  • 500:$1.1000
  • 1000:$0.8650
  • 5000:$0.7820
Сурет Бөлім № Сипаттама
5KP150CA

Mfr.#: 5KP150CA

OMO.#: OMO-5KP150CA

 TVS Diodes / ESD Suppressors 150Vso 117VAC 18.5A
PR03000202200JAC00

Mfr.#: PR03000202200JAC00

OMO.#: OMO-PR03000202200JAC00-VISHAY

 Metal Film Resistors - Through Hole 3watts 220ohms 5%
5KP150CA

Mfr.#: 5KP150CA

OMO.#: OMO-5KP150CA-LITTELFUSE

 TVS Diodes - Transient Voltage Suppressors 150Vso 117VAC 18.5A
RN112-0.8-02-10M

Mfr.#: RN112-0.8-02-10M

OMO.#: OMO-RN112-0-8-02-10M-SCHAFFNER-EMC

 Common Mode Chokes Dual 10mH 10kHz 800mA 380mOhm DCR Thru-Hole
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1987
Саны енгізіңіз:
BSC025N03MSGATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,19 $
1,19 $
10
1,01 $
10,10 $
100
0,78 $
78,20 $
500
0,69 $
345,50 $
1000
0,55 $
546,00 $
2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
-ден бастаңыз
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