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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| SI4884BDY-T1-E3 DISTI # V72:2272_09215597 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12.4A 8-Pin SOIC N T/R RoHS: Compliant | 963 |
|
| SI4884BDY-T1-E3 DISTI # SI4884BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 16.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2808In Stock |
|
| SI4884BDY-T1-E3 DISTI # SI4884BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 16.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2808In Stock |
|
| SI4884BDY-T1-E3 DISTI # SI4884BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 16.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4884BDY-T1-E3 DISTI # 25789858 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12.4A 8-Pin SOIC N T/R RoHS: Compliant | 963 |
|
| SI4884BDY-T1-E3 DISTI # 02M8397 | Vishay Intertechnologies | TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,16.5A I(D),SO | 0 | |
| SI4884BDY-T1-E3 DISTI # 70026230 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant | 0 |
|
| SI4884BDY-T1-E3 DISTI # 781-SI4884BDY-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 RoHS: Compliant | 0 | |
| SI4884BDY-T1-E3 | Vishay Semiconductors | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12.4A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2340 |
|
| SI4884BDY-T1-E3 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12.4A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 760 |
|
| SI4884BDY-T1-E3 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12.4A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1841 |
|
| SI4884BDY-T1-E3 | Vishay Intertechnologies | 2398 | ||
| SI4884BDY-T1-E3 | Vishay Intertechnologies | 7500 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: SI4884BDY-T1-GE3 OMO.#: OMO-SI4884BDY-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 |
|
|
Mfr.#: SI4884BDY-T1-E3 OMO.#: OMO-SI4884BDY-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 |
|
Mfr.#: SI4884BDY-T1-GE3 OMO.#: OMO-SI4884BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 16.5A 4.45W 9.0mohm @ 10V |
|
Mfr.#: SI4884BDY OMO.#: OMO-SI4884BDY-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: SI4884BDY-T1-E3 OMO.#: OMO-SI4884BDY-T1-E3-VISHAY |
MOSFET N-CH 30V 16.5A 8-SOIC |