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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| IPI041N12N3GAKSA1 DISTI # V99:2348_06377393 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # V36:1790_06377393 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 120A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
|
| IPI041N12N3GAKSA1 DISTI # 30182284 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # 26193810 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI041N12N3 G DISTI # IPI041N12N3G | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin TO-262 Tube - Bulk (Alt: IPI041N12N3G) RoHS: Compliant Min Qty: 145 Container: Bulk | Americas - 0 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI041N12N3GAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IPI041N12N3GAKSA1) RoHS: Compliant Min Qty: 149 Container: Bulk | Americas - 0 | |
| IPI041N12N3GAKSA1 DISTI # SP000652748 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 (Alt: SP000652748) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPI041N12N3GAKSA1. DISTI # 32AC0679 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:120V,On Resistance Rds(on):4.1mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
|
| IPI041N12N3GAKSA1 DISTI # 726-IPI041N12N3GAKSA | Infineon Technologies AG | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 RoHS: Compliant | 400 |
|
| IPI041N12N3 G DISTI # 726-IPI041N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 RoHS: Compliant | 46 |
|
| IPI041N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 493 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: IPI040N06N3GXKSA1 OMO.#: OMO-IPI040N06N3GXKSA1 |
MOSFET N-Ch 60V 90A I2PAK-3 |
|
|
Mfr.#: IPI041N12N3GAKSA1 OMO.#: OMO-IPI041N12N3GAKSA1 |
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 |
|
|
Mfr.#: IPI045N10N3GXKSA1 OMO.#: OMO-IPI045N10N3GXKSA1 |
MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 |
|
|
Mfr.#: IPI040N06N3GHKSA1 OMO.#: OMO-IPI040N06N3GHKSA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPI041N12N3G OMO.#: OMO-IPI041N12N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: IPI045N10N OMO.#: OMO-IPI045N10N-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPI045N10N3G OMO.#: OMO-IPI045N10N3G-1190 |
Trans MOSFET N-CH 100V 100A 3-Pin TO-262 Tube - Bulk (Alt: IPI045N10N3 G) |
|
|
Mfr.#: IPI04CN10NG OMO.#: OMO-IPI04CN10NG-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: IPI040N06N3 G OMO.#: OMO-IPI040N06N3-G-128 |
MOSFET N-Ch 60V 90A I2PAK-3 OptiMOS 3 |
|
|
Mfr.#: IPI045N10N3 G OMO.#: OMO-IPI045N10N3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 |