Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union

BSC160N10NS3GATMA1

Mfr. #:: BSC160N10NS3GATMA1
Өндіруші:: Infineon Technologies
Сипаттама:: MOSFET N-CH 100V 42A TDSON-8
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: BSC160N10NS3GATMA1 Деректер тізімі
ECAD Model:

Қол жетімділік

Қор:: Available
Тапсырыс бойынша:: 3000
Саны енгізіңіз:

BSC160N10NS3GATMA1 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~0,64 $~~; ~~0,64 $~~

10: ~~0,61 $~~; ~~6,06 $~~

100: ~~0,57 $~~; ~~57,39 $~~

500: ~~0,54 $~~; ~~271,00 $~~

1000: ~~0,51 $~~; ~~510,10 $~~

Өнім атрибуты
Төлсипат мәні

Tags: BSC160N10NS3, BSC160N10, BSC160, BSC16, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC160N10NS3GATMA1 Сипаттама

***ure Electronics: Single N-Channel 100 V 33 mOhm 25 nC OptiMOS Power Mosfet - TDSON-8

***p One Stop Japan: Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.0139Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
BSC160N10NS3GATMA1 DISTI # V36:1790_06384564	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	10000	5000:$0.4412
BSC160N10NS3GATMA1 DISTI # V72:2272_06384564	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	2221	1000:$0.4612 500:$0.5949 250:$0.6625 100:$0.6763 25:$0.7891 10:$0.9644 1:$1.1184
BSC160N10NS3GATMA1 DISTI # BSC160N10NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 42A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	30789In Stock	1000:$0.5131 500:$0.6500 100:$0.7868 10:$1.0090 1:$1.1300
BSC160N10NS3GATMA1 DISTI # BSC160N10NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 42A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	30789In Stock	1000:$0.5131 500:$0.6500 100:$0.7868 10:$1.0090 1:$1.1300
BSC160N10NS3GATMA1 DISTI # BSC160N10NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 42A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	25000In Stock	10000:$0.4251 5000:$0.4417
BSC160N10NS3GATMA1 DISTI # 33626984	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	10000	5000:$0.4412
BSC160N10NS3GATMA1 DISTI # 32674597	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	2221	18:$1.1184
BSC160N10NS3GATMA1 DISTI # SP000482382	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: SP000482382) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.4509 30000:€0.4859 20000:€0.5269 10000:€0.5739 5000:€0.7019
BSC160N10NS3GXT DISTI # BSC160N10NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON EP - Tape and Reel (Alt: BSC160N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3215 30000:$0.3273 20000:$0.3387 10000:$0.3514 5000:$0.3645
BSC160N10NS3GATMA1 DISTI # 47Y7999	Infineon Technologies AG	MOSFET Transistor, N Channel, 42 A, 100 V, 0.0139 ohm, 10 V, 2.7 V RoHS Compliant: Yes	10828	1000:$0.4990 500:$0.6070 250:$0.6470 100:$0.6880 50:$0.7570 25:$0.8260 10:$0.8950 1:$1.0400
BSC160N10NS3GATMA1. DISTI # 23AC2920	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0139ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:60W,No. of Pins:8Pins RoHS Compliant: Yes	0	50000:$0.3220 30000:$0.3280 20000:$0.3390 10000:$0.3520 1:$0.3650
BSC160N10NS3GATMA1 DISTI # 726-BSC160N10NS3GATM	Infineon Technologies AG	MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 RoHS: Compliant	41977	1:$1.0300 10:$0.8860 100:$0.6810 500:$0.6010 1000:$0.4750
BSC160N10NS3 G DISTI # 726-BSC160N10NS3G	Infineon Technologies AG	MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 RoHS: Compliant	9432	1:$1.0300 10:$0.8860 100:$0.6810 500:$0.6010 1000:$0.4750
BSC160N10NS3GATMA1 DISTI # 8259250P	Infineon Technologies AG	MOSFET N-CH 8.8A 100V OPTIMOS3 TDSON8EP, RL	20870	100:£0.4870
BSC160N10NS3GATMA1 DISTI # BSC160N10NS3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,42A,60W,PG-TDSON-8	4293	500:$0.5777 100:$0.6419 25:$0.7320 5:$0.8086 1:$0.8987
BSC160N10NS3GATMA1 DISTI # 2443424	Infineon Technologies AG	MOSFET, N CH, 100V, 42A, TDSON-8 RoHS: Compliant	10828	100:$1.0300 10:$1.3400 1:$1.5500
BSC160N10NS3GATMA1 DISTI # 2443424	Infineon Technologies AG	MOSFET, N CH, 100V, 42A, TDSON-8	11013	500:£0.4680 250:£0.4990 100:£0.5300 10:£0.7460 1:£0.9140

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: BSC160N10NS3GATMA1 OMO.#: OMO-BSC160N10NS3GATMA1	MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
	Mfr.#: BSC160N10NS3 G OMO.#: OMO-BSC160N10NS3-G	MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
	Mfr.#: BSC160N10NS OMO.#: OMO-BSC160N10NS-1190	Жаңа және түпнұсқа
	Mfr.#: BSC160N10NS3 G OMO.#: OMO-BSC160N10NS3-G-1190	MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
	Mfr.#: BSC160N10NS3G OMO.#: OMO-BSC160N10NS3G-1190	Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G)
	Mfr.#: BSC160N10NS3GATMA1 , TDZ OMO.#: OMO-BSC160N10NS3GATMA1-TDZ-1190	Жаңа және түпнұсқа
	Mfr.#: BSC160N10NS3GATMA1 OMO.#: OMO-BSC160N10NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 42A TDSON-8

-ден бастаңыз

BSC160N10NS3 4
BSC160N10 5
BSC160 6
BSC16 10
BSC1 141
BSC 999

Ең жаңа өнімдер

M-SERIES D-Sub Connectors

The M-SERIES D-Sub connectors offer high reliability performance for the most challenging design applications.
TLV493D-A1B6 3D Magnetic Sensor

Infineon's combination of 3-axis measurement in a small package, with low power consumption, provides the TLV493D-A1B6 contactless position sensing.
IR25750 Current Sensing IC

IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
600 V Trench Ultra-Fast IGBTs

International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
DPS310 Digital Barometric Pressure Sensors

Infineon's DPS310XTSA1 is a miniaturized digital barometric air pressure sensor with high accuracy, high stability, and low current consumption.