APT30GN60BDQ2G

Mfr. #:: APT30GN60BDQ2G
Өндіруші:: Microchip / Microsemi
Сипаттама:: IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
Өміршеңдік кезең:: Осы өндірушіден жаңа.
Деректер тізімі:: APT30GN60BDQ2G Деректер тізімі
Жеткізу:: DHL FedEx Ups TNT EMS
Төлем:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: APT30GN60BDQ2G Datasheet APT30GN60BDQ2G Datasheet (P4-P6)APT30GN60BDQ2G Datasheet (P7-P9)
ECAD Model:

Өнім атрибуты
Төлсипат мәні

Өндіруші:: Микрочип

Өнім санаты:: IGBT транзисторлары

RoHS:: Y

Технология:: Си

Қаптама:: Түтік

Бренд:: Микрочип / Microsemi

Өнім түрі:: IGBT транзисторлары

Зауыттық буманың саны:: 1

Ішкі санат:: IGBT

Tags: APT30GN, APT30G, APT30, APT3, APT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT30GN60BDQ2G Сипаттама

***ical: Trans IGBT Chip N-CH 600V 63A 203000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: APT30GN60 Series 600 V 63 A 203 W 165 nC Field Stop - Trench Gate IGBT TO-247-3

***rochip: IGBT Fieldstop Low Frequency Combi 600 V 30 A TO-247

*** Stop Electro: Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247

***th Star Micro: Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ

***p One Stop Global: Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***eco: Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:55A; Collector Emitter Saturation Voltage, Vce(sat):2.3V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***nell: IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ment14 APAC: IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop: Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): IRG4PC50FPBF, IGBT Transistor, 70 A 600V, 3-Pin TO-247AC

***ure Electronics: IRG4PC50 Series 600 V 39 A N-Channel Fast Speed IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.6 V Current release time: 230 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time Max:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:280A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): 600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF

***hine Compare: Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC

*** Electronics: IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: New short circuit rugged "K" series

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): IGBT N-Channel 30A 600V TO-247

***ark: Igbt, Single, 600V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***DA Technology Co., Ltd.: Product Description Demo for Development.

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

***nell: IGBT, 600V, 80A, 175DEG C, 375W; Available until stocks are exhausted Alternative available

***ical: Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

Market price

Бөлім №	Mfg.	Сипаттама	Қор	Бағасы
APT30GN60BDQ2G DISTI # APT30GN60BDQ2G-ND	Microsemi Corporation	IGBT 600V 63A 203W TO247 RoHS: Compliant Min Qty: 112 Container: Tube	Temporarily Out of Stock	112:$4.9180
APT30GN60BDQ2G DISTI # APT30GN60BDQ2G	Microchip Technology Inc	Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT30GN60BDQ2G) RoHS: Compliant Min Qty: 112 Container: Tube	Americas - 0	560:$2.7900 1120:$2.7900 336:$2.8900 224:$2.9900 112:$3.0900
APT30GN60BDQ2G DISTI # 494-APT30GN60BDQ2G	Microchip Technology Inc	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi RoHS: Compliant	115	1:$6.2700

Қосымша тауарлар

Сурет	Бөлім №	Сипаттама
	Mfr.#: APT30GN60BDQ2G OMO.#: OMO-APT30GN60BDQ2G	IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
	Mfr.#: APT30GN60BG OMO.#: OMO-APT30GN60BG	IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
	Mfr.#: APT30GN60BG OMO.#: OMO-APT30GN60BG-MICROSEMI	IGBT Transistors
	Mfr.#: APT30GN60BDQ2G OMO.#: OMO-APT30GN60BDQ2G-MICROSEMI	IGBT 600V 63A 203W TO247
	Mfr.#: APT30GN60SDQ2G OMO.#: OMO-APT30GN60SDQ2G-1190	POWER IGBT TRANSISTOR
	Mfr.#: APT30GN60SG OMO.#: OMO-APT30GN60SG-1190	Жаңа және түпнұсқа

Қол жетімділік

Қор:: 115
Тапсырыс бойынша:: 2098
Саны енгізіңіз:

APT30GN60BDQ2G ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.

Анықтамалық баға (USD)

Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы

1: ~~6,27 $~~; ~~6,27 $~~

-ден бастаңыз

APT30GN 4
APT30G 32
APT30 146
APT3 241
APT 2789

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APT30GN60BDQ2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes