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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| FGB5N60UNDF DISTI # 26733835 | ON Semiconductor | 600V 5A NPT IGBT | 2400 |
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| FGB5N60UNDF DISTI # FGB5N60UNDF-ND | ON Semiconductor | IGBT 600V 10A 73.5W D2PAK RoHS: Compliant Min Qty: 800 Container: Tube | Temporarily Out of Stock |
|
| FGB5N60UNDF DISTI # V36:1790_06338232 | ON Semiconductor | 600V 5A NPT IGBT | 0 | |
| FGB5N60UNDF DISTI # FGB5N60UNDF | ON Semiconductor | Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail (Alt: FGB5N60UNDF) RoHS: Compliant Min Qty: 800 | Europe - 0 |
|
| FGB5N60UNDF DISTI # FGB5N60UNDF | ON Semiconductor | Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Bulk (Alt: FGB5N60UNDF) Min Qty: 368 Container: Bulk | Americas - 0 |
|
| FGB5N60UNDF DISTI # FGB5N60UNDF | ON Semiconductor | Trans IGBT Chip N-CH 600V 10A 3-Pin(2+Tab) D2PAK Rail - Tape and Reel (Alt: FGB5N60UNDF) RoHS: Compliant Min Qty: 800 Container: Reel | Americas - 0 |
|
| FGB5N60UNDF DISTI # 57AC1890 | ON Semiconductor | IGBT, SINGLE, 600V, 10A, TO-263AB,DC Collector Current:10A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:73.5W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-263AB,No. of Pins:3Pins,RoHS Compliant: Yes | 775 |
|
| FGB5N60UNDF DISTI # 95T0027 | ON Semiconductor | NPTPIGBT TO263 5A 600V / REEL | 0 |
|
| FGB5N60UNDF DISTI # 512-FGB5N60UNDF | ON Semiconductor | IGBT Transistors 600V 5A NPT IGBT RoHS: Compliant | 2160 |
|
| FGB5N60UNDF | ON Semiconductor | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 1600 |
|
| FGB5N60UNDF | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 73530 |
|
| FGB5N60UNDF | Fairchild Semiconductor Corporation | 1250 | ||
| FGB5N60UNDF DISTI # 2860234 | ON Semiconductor | IGBT, SINGLE, 600V, 10A, TO-263AB RoHS: Compliant | 775 |
|
| FGB5N60UNDF DISTI # 2860234 | ON Semiconductor | IGBT, SINGLE, 600V, 10A, TO-263AB RoHS: Compliant | 800 |
|
| FGB5N60UNDF | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | Europe - 800 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
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Mfr.#: FGB5N60UNDF OMO.#: OMO-FGB5N60UNDF |
IGBT Transistors 600V 5A NPT IGBT |
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Mfr.#: FGB5N60UNDF |
IGBT Transistors 600V 5A NPT IGBT |