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IRFHM830DTRPBF

IRFHM830DTRPBF
Mfr. #:
IRFHM830DTRPBF
Өндіруші:
Infineon Technologies
Сипаттама:
Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRFHM830DTRPBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші
Халықаралық түзеткіш
Өнім санаты
Транзисторлар - FETs, MOSFETs - Бірыңғай
Қаптама
Ролик
Монтаждау стилі
SMD/SMT
Пакет-қорап
PQFN-8
Технология
Си
Арналар саны
1 Channel
Конфигурация
Бір төрттік ағызу үштік көзі
Транзистор түрі
1 N-Channel
Pd-қуат-диссипация
2.8 W
Максималды-жұмыс температурасы
+ 150 C
Ең төменгі жұмыс температурасы
- 55 C
Күз уақыты
6.7 ns
Көтерілу уақыты
20 ns
Vgs-қақпа-көзі-кернеу
20 V
Id-үздіксіз-ағызу-ток
20 A
Vds-ағызу-көз-бұзу-кернеу
30 V
Vgs-th-Gate-Көзі-Табалдырық-кернеу
1.8 V
Rds-On-Drain-Source-Resistance
5.7 mOhms
Транзистор-полярлық
N-арна
Әдеттегі-өшіру-кідірту уақыты
9.1 ns
Әдеттегі-қосу-кешігу-уақыты
9.8 ns
Qg-Gate-Заряд
13 nC
Форвард-өткізгіштік-мин
69 S
Арна режимі
Жақсарту
Tags
IRFHM830DT, IRFHM830D, IRFHM830, IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3
***ment14 APAC
MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ernational Rectifier
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN
***ment14 APAC
MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Power Dissipation Pd:26W; Voltage Vgs Max:20V
*** Electronics
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***roFlash
Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
*** Source Electronics
Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37
Бөлім № Mfg. Сипаттама Қор Бағасы
IRFHM830DTRPBF
DISTI # V72:2272_13891074		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
RoHS: Compliant		1703
  • 75000:$0.5489
  • 30000:$0.5491
  • 15000:$0.5499
  • 6000:$0.5558
  • 3000:$0.5616
  • 1000:$0.5633
  • 500:$0.5860
  • 250:$0.6596
  • 100:$0.7208
  • 50:$0.7680
  • 25:$0.8785
  • 10:$0.9017
  • 1:$1.0073
IRFHM830DTRPBF
DISTI # IRFHM830DTRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 20A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFHM830DTRPBF
    DISTI # 26196361    		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
    RoHS: Compliant    		1703
    • 1000:$0.5633
    • 500:$0.5860
    • 250:$0.6596
    • 100:$0.7208
    • 50:$0.7680
    • 25:$0.8785
    • 14:$0.9017
    IRFHM830DTRPBF
    DISTI # 70019948    		Infineon Technologies AGMOSFET,30V,40A,4.3 MOHM,13 NC QG,1.1 OHM RG,MONOFETKY,PQFN 3.3X3.3
    RoHS: Compliant    		0
    • 4000:$1.5400
    • 8000:$1.5090
    • 20000:$1.4630
    • 40000:$1.4010
    • 100000:$1.3090
    IRFHM830DTRPBF
    DISTI # 942-IRFHM830DTRPBF    		Infineon Technologies AGMOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
    RoHS: Compliant    		0
      IRFHM830DTRPBFInternational Rectifier 576
      • 501:$1.0712
      • 232:$1.2010
      • 1:$2.5968
      IRFHM830DTRPBF
      DISTI # 1857345      		Infineon Technologies AGMOSFET,N CH,SCH DIODE,30V,20A,PQFN33
      RoHS: Compliant      		0
      • 1:$1.9100
      • 10:$1.6100
      • 100:$1.2500
      • 500:$1.1100
      • 1000:$0.9440
      IRFHM830DTRPBF
      DISTI # C1S322000595279      		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
      RoHS: Compliant      		1703
      • 100:$0.7208
      • 50:$0.7680
      • 25:$0.8785
      • 10:$0.9017
      Сурет Бөлім № Сипаттама
      IRFHM8334TRPBF

      Mfr.#: IRFHM8334TRPBF

      OMO.#: OMO-IRFHM8334TRPBF

      		 MOSFET 30V SGL N-CH HEXFET Pwr MOSFET
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      IRFHM830TR2PBF

      Mfr.#: IRFHM830TR2PBF

      OMO.#: OMO-IRFHM830TR2PBF

      		 MOSFET MOSFT 30V 40A 3.8mOhm
      IRFHM8334TRPBF

      Mfr.#: IRFHM8334TRPBF

      OMO.#: OMO-IRFHM8334TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A 8PQFN
      IRFHM830DTRPBF.

      Mfr.#: IRFHM830DTRPBF.

      OMO.#: OMO-IRFHM830DTRPBF--1190

      		 Жаңа және түпнұсқа
      IRFHM830TRPBF

      Mfr.#: IRFHM830TRPBF

      OMO.#: OMO-IRFHM830TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 21A PQFN
      IRFHM831TR2PBF

      Mfr.#: IRFHM831TR2PBF

      OMO.#: OMO-IRFHM831TR2PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 14A PQFN
      IRFHM8329TRPBF

      Mfr.#: IRFHM8329TRPBF

      OMO.#: OMO-IRFHM8329TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 16A PQFN
      IRFHM8330TRPBF

      Mfr.#: IRFHM8330TRPBF

      OMO.#: OMO-IRFHM8330TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 16A 8PQFN
      IRFHM8337TRPBF

      Mfr.#: IRFHM8337TRPBF

      OMO.#: OMO-IRFHM8337TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 12A 8PQFN
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      2500
      Саны енгізіңіз:
      IRFHM830DTRPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      Анықтамалық баға (USD)
      Саны
      Тауар өлшемінің бағасы
      Қосымша. Бағасы
      1
      0,65 $
      0,65 $
      10
      0,62 $
      6,22 $
      100
      0,59 $
      58,91 $
      500
      0,56 $
      278,20 $
      1000
      0,52 $
      523,70 $
      2021 жылдан бастап жартылай өткізгіштің жетіспеушілігіне байланысты 2021 жылға дейінгі қалыпты баға төмен. Растау үшін сұрау жіберіңіз.
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