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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BUZ357 | Siemens | Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant | 22 |
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BUZ30AHXKSA1 OMO.#: OMO-BUZ30AHXKSA1 |
MOSFET N-Ch 200V 21A TO220FP-3 |
|
Mfr.#: BUZ100 OMO.#: OMO-BUZ100-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: BUZ33 OMO.#: OMO-BUZ33-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: BUZ41AE3044A OMO.#: OMO-BUZ41AE3044A-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: BUZ54A OMO.#: OMO-BUZ54A-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: BUZ61A OMO.#: OMO-BUZ61A-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: BUZ900P OMO.#: OMO-BUZ900P-1190 |
N CHANNEL MOSFET, 160V, 8A, TO-247, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:160V, On Resistance Rds(on):1.5ohm, Rds(on) Test Voltage Vgs:-, Thresh |
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Mfr.#: BUZ906 OMO.#: OMO-BUZ906-1190 |
P CHANNEL MOSFET, -200V, -8A, TO-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-8A, Drain Source Voltage Vds:-200V, On Resistance Rds(on):1.5ohm, Rds(on) Test Voltage Vgs:-, Thre |
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Mfr.#: BUZ90AF BUZ90A OMO.#: OMO-BUZ90AF-BUZ90A-1190 |
Жаңа және түпнұсқа |
|
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Mfr.#: BUZZER_SMQS-85401-32C0 |
Жаңа және түпнұсқа |