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CSD18537NKCS

CSD18537NKCS
Mfr. #:
CSD18537NKCS
Сипаттама:
MOSFET 60V N-Channel NexFET Pwr MOSFET
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
CSD18537NKCS Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
CSD18537NKCS Көбірек ақпарат CSD18537NKCS Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Texas Instruments
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-220-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
60 V
Идентификатор - үздіксіз төгу тогы:
56 A
Rds On - ағызу көзіне қарсылық:
14 mOhms
Vgs th - Gate-Source шекті кернеуі:
2.6 V
Vgs - Шлюз көзі кернеуі:
10 V
Qg - қақпа заряды:
14 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
94 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Сауда атауы:
NexFET
Қаптама:
Түтік
Биіктігі:
16.51 mm
Ұзындығы:
10.67 mm
Серия:
CSD18537NKCS
Транзистор түрі:
1 N-Channel
Ені:
4.7 mm
Бренд:
Texas Instruments
Форвард өткізгіштік - Мин:
100 S
Күз уақыты:
3.9 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
3.2 ns
Зауыттық буманың саны:
50
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
12.6 ns
Қосудың әдеттегі кешігу уақыты:
4.5 ns
Бірлік салмағы:
0.211644 oz
Tags
CSD18537, CSD1853, CSD185, CSD18, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
60-V, N channel NexFET™ power MOSFET, single TO-220, 14 mOhm 3-TO-220 -55 to 175
***ical
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220 Tube
*** Stop Electro
Power Field-Effect Transistor, 34A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
***icroelectronics
N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFET
***ical
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube
***ark
Mosfet, N Channel, 60V, 60A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:-Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-Channel 60V - 0.014Ohm - 60A - TO-220 StripFET(TM) II MOSFET
*** Electronics
STP60NF06 N-Channel MOSFET, 60 A, 60 V STripFET II, 3-Pin TO-220 STMicroelectronics
***ical
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 60 V 16 mO STripFET II Power MosFet - TO-220
***enic
60V 60A 16m´Î@10V30A 110W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation P
***r Electronics
Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package
***ure Electronics
N-Channel 60 V 18 mOhm STripFET™ II Power MosFet - TO-220
***ical
Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220AB Tube
***enic
60V 55A 18m´Î@10V27.5A 95W 1.7V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 60V, 55A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Powe
***ical
Trans MOSFET N-CH 60V 45A Automotive 3-Pin(3+Tab) TO-220 Tube
***nell
MOSFET, N-CH, 60V, 45A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; P
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ure Electronics
Single N-Channel 60 V 9.3 mOhm 36 nC OptiMOS™ Power Mosfet - TO-220-3
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 60V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:71W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel Power MOSFET, UniFETTM, 60 V, 55 A, 22 mΩ, TO-220
***ure Electronics
N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO-220
***Yang
Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***enic
60V 55A 22m´Î@10V27.5A 114W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 60V, 55A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:114W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***AS INSRUMENTS
This 11 mΩ, 60 V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Бөлім № Сипаттама Қор Бағасы
CSD18537NKCS
DISTI # 296-36456-5-ND		MOSFET N-CH 60V 50A TO220-3
RoHS: Not compliant
Min Qty: 1
Container: Tube		3439In Stock
  • 5000:$0.5106
  • 2500:$0.5375
  • 1000:$0.5758
  • 500:$0.7294
  • 100:$0.9406
  • 50:$1.0750
  • 10:$1.1900
  • 1:$1.3400
CSD18537NKCS
DISTI # CSD18537NKCS		Trans MOSFET N-CH 60V 54A 3-Pin TO-220 Tube (Alt: CSD18537NKCS)
RoHS: Compliant
Min Qty: 700
Container: Tube		Asia - 0
    CSD18537NKCS
    DISTI # CSD18537NKCS    		Trans MOSFET N-CH 60V 54A 3-Pin TO-220 Tube - Rail/Tube (Alt: CSD18537NKCS)
    RoHS: Compliant
    Min Qty: 750
    Container: Tube    		Americas - 0
    • 750:$0.5059
    • 850:$0.4819
    • 1600:$0.4649
    • 3750:$0.4499
    • 7500:$0.4369
    CSD18537NKCS60-V, N-Channel NexFET&#153,Power MOSFET5448
    • 1000:$0.4000
    • 750:$0.4400
    • 500:$0.5600
    • 250:$0.6800
    • 100:$0.7400
    • 25:$0.8600
    • 10:$0.9300
    • 1:$1.0400
    CSD18537NKCS
    DISTI # 595-CSD18537NKCS    		MOSFET 60V N-Channel NexFET Pwr MOSFET
    RoHS: Compliant    		1188
    • 1:$1.1500
    • 10:$0.9800
    • 100:$0.7510
    • 500:$0.6640
    • 1000:$0.5240
    • 2500:$0.4650
    CSD18537NKCS
    DISTI # 8274906    		MOSFET N-CHANNEL 60V 54A NEXFET TO-220, PK165
    • 5:£0.8920
    • 25:£0.7080
    • 50:£0.6260
    • 250:£0.5420
    • 500:£0.4800
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    Қол жетімділік
    Қор:
    Available
    Тапсырыс бойынша:
    1984
    Саны енгізіңіз:
    CSD18537NKCS ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
    Анықтамалық баға (USD)
    Саны
    Тауар өлшемінің бағасы
    Қосымша. Бағасы
    1
    1,15 $
    1,15 $
    10
    0,98 $
    9,80 $
    100
    0,75 $
    75,10 $
    500
    0,66 $
    332,00 $
    1000
    0,52 $
    524,00 $
    2500
    0,46 $
    1 162,50 $
    10000
    0,45 $
    4 470,00 $
    25000
    0,43 $
    10 825,00 $
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