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IRFH5206TRPBF

IRFH5206TRPBF
Mfr. #:
IRFH5206TRPBF
Өндіруші:
Infineon / IR
Сипаттама:
MOSFET 60V SINGLE N-CH 6.7mOhms 40nC
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRFH5206TRPBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5206TRPBF DatasheetIRFH5206TRPBF Datasheet (P4-P6)IRFH5206TRPBF Datasheet (P7-P9)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
PQFN-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
60 V
Идентификатор - үздіксіз төгу тогы:
89 A
Rds On - ағызу көзіне қарсылық:
6.7 mOhms
Vgs th - Gate-Source шекті кернеуі:
4 V
Vgs - Шлюз көзі кернеуі:
20 V
Qg - қақпа заряды:
40 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 150 C
Pd - қуаттың шығыны:
100 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Биіктігі:
0.83 mm
Ұзындығы:
6 mm
Транзистор түрі:
1 N-Channel
Ені:
5 mm
Бренд:
Infineon / IR
Форвард өткізгіштік - Мин:
73 S
Күз уақыты:
8.2 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
11 ns
Зауыттық буманың саны:
4000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
22 ns
Қосудың әдеттегі кешігу уақыты:
6.4 ns
Бөлім # Бүркеншік аттар:
SP001556276
Tags
IRFH5206, IRFH520, IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
*** Electronics
INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
***ure Electronics
Single N-Channel 60 V 4.1 mOhm 69 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET; 60V; 100A; 4.1mOhm; 67 nC Qg; PQFN5x6
***Yang
Trans MOSFET N-CH 60V 21A 8-Pin QFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***nell
MOSFET, N-CH, 60V, 21A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***Yang
Trans MOSFET N-CH 60V 23A 8-Pin PQFN T/R - Product that comes on tape, but is not reeled
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
***ure Electronics
Single N-Channel 60 V 3.2 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
*** Source Electronics
MOSFET N-CH 60V 23A 6-PQFN / Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: -; Transistor Case Style: QFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***Yang
Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
***(Formerly Allied Electronics)
MOSFET 100V, Gen 10.7, 11.68 mOhm max, 56.2 nC Qg
***trelec
MOSFET PQFN-8 (5x6) N 100V 11 A
***et
Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET,N CH,100V,11A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:63A; Power Dissipation Pd:114W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, 100V, 55A, 14.9 mOhm, 39 nC Qg, PQFN 5x6
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,100V,55A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33
***et
Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R
***ment14 APAC
MOSFET, N CH, 30V, 16A, PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:16mA; Package / Case:PQFN; Power Dissipation Pd:2.8W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Бөлім № Mfg. Сипаттама Қор Бағасы
IRFH5206TRPBF
DISTI # 27112190		Infineon Technologies AGTrans MOSFET N-CH 60V 16A 8-Pin PQFN EP T/R2480
  • 95:$0.6637
IRFH5206TRPBF
DISTI # IRFH5206TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 60V 16A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		760In Stock
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
IRFH5206TRPBF
DISTI # IRFH5206TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 60V 16A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		760In Stock
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
IRFH5206TRPBF
DISTI # IRFH5206TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 60V 16A 8-PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFH5206TRPBF
    DISTI # SP001556276    		Infineon Technologies AGTrans MOSFET N-CH 60V 16A 8-Pin QFN T/R (Alt: SP001556276)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1:€1.1559
    • 10:€0.9699
    • 25:€0.8099
    • 50:€0.7059
    • 100:€0.6919
    • 500:€0.6739
    • 1000:€0.6609
    IRFH5206TRPBF
    DISTI # 74R1490    		Infineon Technologies AGMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:89A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.6W RoHS Compliant: Yes2480
    • 1:$0.5310
    • 25:$0.5310
    • 50:$0.5310
    • 100:$0.5310
    • 250:$0.5310
    • 500:$0.5310
    • 1000:$0.5310
    IRFH5206TRPBF
    DISTI # 74R1491    		Infineon Technologies AGMOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:89A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes4000
    • 1:$0.6610
    • 4000:$0.6360
    • 8000:$0.6110
    IRFH5206TRPBF
    DISTI # 70019274    		Infineon Technologies AGMOSFET,60V,87A,7mOhm,40 nC Qg,PQFN5x6
    RoHS: Compliant    		0
    • 4000:$0.7220
    • 8000:$0.7080
    • 20000:$0.6860
    IRFH5206TRPBF
    DISTI # 942-IRFH5206TRPBF    		Infineon Technologies AGMOSFET 60V SINGLE N-CH 6.7mOhms 40nC
    RoHS: Compliant    		0
      IRFH5206TRPBF
      DISTI # 2577225      		Infineon Technologies AGMOSFET, N-CH, 60V, 16A, PQFN-8
      RoHS: Compliant      		0
      • 4000:$1.3100
      • 12000:$1.2600
      IRFH5206TRPBF
      DISTI # 2577162      		Infineon Technologies AGMOSFET, N-CH, 60V, 16A, PQFN-8
      RoHS: Compliant      		0
      • 1:$2.8400
      • 10:$2.5600
      • 100:$2.0600
      • 500:$1.6100
      Сурет Бөлім № Сипаттама
      IRFH5215TRPBF

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      		 MOSFET MOSFT 25V FETky 100A 1.4mOhm 39nC Qg
      IRFH5207TR2PBF

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      		 MOSFET MOSFT 75V Gen 10.7 10.11mOhm 43.5nC Qg
      IRFH5206TR2PBF

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      		 MOSFET MOSFT 60V 87A 7mOhm 40nC Qg
      IRFH5250DTRPBF.

      Mfr.#: IRFH5250DTRPBF.

      OMO.#: OMO-IRFH5250DTRPBF--1190

      		 TRENCH_MOSFETS , ROHS COMPLIANT: YES
      IRFH5210TR2PBF

      Mfr.#: IRFH5210TR2PBF

      OMO.#: OMO-IRFH5210TR2PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 10A 5X6 PQFN
      IRFH5204TRPBF.

      Mfr.#: IRFH5204TRPBF.

      OMO.#: OMO-IRFH5204TRPBF--1190

      		 Жаңа және түпнұсқа
      IRFH5206TRPBF.

      Mfr.#: IRFH5206TRPBF.

      OMO.#: OMO-IRFH5206TRPBF--1190

      		 Жаңа және түпнұсқа
      IRFH5210TRPBF.

      Mfr.#: IRFH5210TRPBF.

      OMO.#: OMO-IRFH5210TRPBF--1190

      		 Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0126ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Diss
      IRFH5250TRPBF

      Mfr.#: IRFH5250TRPBF

      OMO.#: OMO-IRFH5250TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 25V 45A PQFN
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      5000
      Саны енгізіңіз:
      IRFH5206TRPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
      -ден бастаңыз
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