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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4910In Stock |
|
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC883N03LS G DISTI # BSC883N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: BSC883N03LS G) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
| BSC883N03LS G DISTI # SP000507422 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: SP000507422) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
| BSC883N03LSGXT DISTI # BSC883N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC883N03LSGATMA1 DISTI # 97Y1252 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:98A,Drain Source Voltage Vds:34V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes | 4766 |
|
| BSC883N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 14999 |
|
| BSC883N03LS G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSC883N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC883N03LS G DISTI # 726-BSC883N03LSG | Infineon Technologies AG | MOSFET N-Ch 34V 98A TDSON-8 RoHS: Compliant | 4969 |
|
| BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4766 |
|
| BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4766 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G |
MOSFET N-Ch 34V 98A TDSON-8 |
|
|
Mfr.#: BSC883N03LSGATMA1 OMO.#: OMO-BSC883N03LSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC883N03LSGXT OMO.#: OMO-BSC883N03LSGXT-1190 |
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) |
|
|
Mfr.#: BSC883N03LS OMO.#: OMO-BSC883N03LS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC883N03LSGATMA1 , TDZF |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC883N03MS OMO.#: OMO-BSC883N03MS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: BSC883N03MSG OMO.#: OMO-BSC883N03MSG-1190 |
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC883N03MSGATMA1 |
MOSFET N-CH 34V 19A TDSON-8 |
|
|
Mfr.#: BSC883N03MS G OMO.#: OMO-BSC883N03MS-G-126 |
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 |
|
|
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8 |
