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MRFE6VP6300HSR5

MRFE6VP6300HSR5
Mfr. #:
MRFE6VP6300HSR5
Өндіруші:
NXP Semiconductors
Сипаттама:
RF MOSFET Transistors VHV6 300W50VISM NI780S-4
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
MRFE6VP6300HSR5 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
MRFE6VP6300HSR5 Көбірек ақпарат MRFE6VP6300HSR5 Product Details
Өнім атрибуты
Төлсипат мәні
Өндіруші
NXP / Freescale
Өнім санаты
Транзисторлар - FETs, MOSFETs - Бірыңғай
Сериялар
MRFE6VP6300H
Түр
RF қуаты MOSFET
Қаптама
Ролик
Бірлік-салмағы
0.161213 oz
Монтаждау стилі
SMD/SMT
Пакет-қорап
NI-780S-4
Технология
Си
Табыс
26.6 dB at 230 MHz
Шығу-қуаты
300 W at Peak
Pd-қуат-диссипация
1050 W
Максималды-жұмыс температурасы
+ 150 C
Ең төменгі жұмыс температурасы
- 30 C
Жұмыс жиілігі
1.8 MHz to 600 MHz
Vgs-қақпа-көзі-кернеу
10 V
Vds-ағызу-көз-бұзу-кернеу
130 V
Vgs-th-Gate-Көзі-Табалдырық-кернеу
2.2 V
Транзистор-полярлық
N-арна
Tags
MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1826
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
***et
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-600 MHZ, 30
***ical
Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R
***et Europe
Trans MOSFET N-CH 130V 4-Pin NI-780S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 130V 230MHZ NI780S-4
***ark
RF POWER FET, N CH, 125V, NI-780S-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; Gain:26.5dB ;RoHS Compliant: Yes
MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5-ND		NXP SemiconductorsFET RF 2CH 130V 230MHZ NI780S-4
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$95.5168
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		Avnet, Inc.Trans MOSFET N-CH 130V 4-Pin NI-780S T/R - Tape and Reel (Alt: MRFE6VP6300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$97.2900
  • 100:$93.4900
  • 200:$89.7900
  • 300:$86.5900
  • 500:$84.8900
MRFE6VP6300HSR5
DISTI # 13T4415		NXP SemiconductorsRF POWER FET, N CHANNEL, 125V, NI-780S-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780S,MSL:- RoHS Compliant: Yes0
  • 1:$111.5100
  • 10:$105.5200
  • 25:$100.1400
  • 50:$96.8000
  • 100:$88.8200
  • 250:$86.1900
  • 500:$83.4900
MRFE6VP6300HSR5
DISTI # 841-MRFE6VP6300HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 300W50VISM NI780S-4
RoHS: Compliant		0
  • 50:$95.5200
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		25
  • 1:$111.6900
  • 10:$103.2200
  • 25:$100.1900
Сурет Бөлім № Сипаттама
MRFE6VP6300HR5

Mfr.#: MRFE6VP6300HR5

OMO.#: OMO-MRFE6VP6300HR5

 RF MOSFET Transistors VHV6 300W50VISM NI780H-4
MRFE6VP61K25NR6

Mfr.#: MRFE6VP61K25NR6

OMO.#: OMO-MRFE6VP61K25NR6

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MRFE6VP6300-88

Mfr.#: MRFE6VP6300-88

OMO.#: OMO-MRFE6VP6300-88

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MRFE6VP5600-225

Mfr.#: MRFE6VP5600-225

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MRFE6VP8600HR6

Mfr.#: MRFE6VP8600HR6

OMO.#: OMO-MRFE6VP8600HR6

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MRFE6VP8600HSR6

Mfr.#: MRFE6VP8600HSR6

OMO.#: OMO-MRFE6VP8600HSR6-NXP-SEMICONDUCTORS

 FET RF 2CH 130V 860MHZ NI1230S
MRFE6VP61K25NR6528

Mfr.#: MRFE6VP61K25NR6528

OMO.#: OMO-MRFE6VP61K25NR6528-1152

 Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
MRFE6VP61K25HSR5

Mfr.#: MRFE6VP61K25HSR5

OMO.#: OMO-MRFE6VP61K25HSR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 1.25KW ISM NI1230HS
MRFE6VP5600HR5

Mfr.#: MRFE6VP5600HR5

OMO.#: OMO-MRFE6VP5600HR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 600W 50V NI1230H
MRFE6VP8600HR5

Mfr.#: MRFE6VP8600HR5

OMO.#: OMO-MRFE6VP8600HR5-NXP-SEMICONDUCTORS

 FET RF 2CH 130V 860MHZ NI-1230
Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
5000
Саны енгізіңіз:
MRFE6VP6300HSR5 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
125,24 $
125,24 $
10
118,97 $
1 189,73 $
100
112,71 $
11 271,15 $
500
106,45 $
53 224,90 $
1000
100,19 $
100 188,00 $
-ден бастаңыз
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