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| Бөлім № | Mfg. | Сипаттама | Қор | Бағасы |
|---|---|---|---|---|
| PSMN013-100ES,127 DISTI # 1727-5891-ND | Nexperia | MOSFET N-CH 100V I2PAK RoHS: Compliant Min Qty: 5000 Container: Tube | Limited Supply - Call | |
| PSMN013-100ES127 | NXP Semiconductors | Now Nexperia PSMN013-100ES - Power Field-Effect Transistor, 68A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 3989 |
|
| PSMN013-100ES,127 DISTI # 771-PSMN013-100ES127 | Nexperia | MOSFET Single NChannel 100V 272A 170W 30mOhms RoHS: Compliant | 490 |
|
| Сурет | Бөлім № | Сипаттама |
|---|---|---|
|
Mfr.#: PSMN013-30MLC,115 OMO.#: OMO-PSMN013-30MLC-115 |
MOSFET N-channel MOSFET logic level LFPAK33 |
|
Mfr.#: PSMN013-30YLC,115 OMO.#: OMO-PSMN013-30YLC-115 |
MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET |
|
|
Mfr.#: PSMN013-100YSEX OMO.#: OMO-PSMN013-100YSEX |
MOSFET N-channel 100 V 13 mo FET |
|
Mfr.#: PSMN013-30LL,115 |
MOSFET N-CH 30V QFN3333 |
|
Mfr.#: PSMN013-100ES127 OMO.#: OMO-PSMN013-100ES127-1190 |
Now Nexperia PSMN013-100ES - Power Field-Effect Transistor, 68A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: PSMN013-100PS OMO.#: OMO-PSMN013-100PS-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: PSMN013-30YLC OMO.#: OMO-PSMN013-30YLC-1190 |
Жаңа және түпнұсқа |
|
|
Mfr.#: PSMN013-80YS OMO.#: OMO-PSMN013-80YS-1190 |
Жаңа және түпнұсқа |
|
Mfr.#: PSMN013-100BS,118 |
Darlington Transistors MOSFET Std N-chanMOSFET |
|
Mfr.#: PSMN013-100XS,127 |
IGBT Transistors MOSFET N-ch 100V 13mA MOSFET |