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FDS3612

FDS3612
Mfr. #:
FDS3612
Өндіруші:
ON Semiconductor / Fairchild
Сипаттама:
MOSFET SO-8
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
FDS3612 Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS3612 DatasheetFDS3612 Datasheet (P4-P5)
ECAD Model:
Өнім атрибуты
Төлсипат мәні
Өндіруші:
ON Жартылай өткізгіш
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
SMD/SMT
Пакет/қорап:
SO-8
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
100 V
Идентификатор - үздіксіз төгу тогы:
3.4 A
Rds On - ағызу көзіне қарсылық:
120 mOhms
Vgs - Шлюз көзі кернеуі:
20 V
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
2.5 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Ролик
Биіктігі:
1.75 mm
Ұзындығы:
4.9 mm
Транзистор түрі:
1 N-Channel
Түрі:
MOSFET
Ені:
3.9 mm
Бренд:
ON Semiconductor / Fairchild
Форвард өткізгіштік - Мин:
11 S
Күз уақыты:
4.5 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
2 ns
Зауыттық буманың саны:
2500
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
23 ns
Қосудың әдеттегі кешігу уақыты:
8.5 ns
Бірлік салмағы:
0.002998 oz
Tags
FDS36, FDS3, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V 3.4A 8SOIC
***Yang
SO8, SINGLE, NCH - Bulk
***el Electronic
RS-232 TRANSMITTERS/RECIEVERS
***ser
MOSFETs SO-8
***Yang
Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ
***ure Electronics
2N-Channel 100 V 2.7 A 105 mOhm Shielded Power Trench Mosfet - SOIC-8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, NN CH, 100V, 2.7A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
*** Source Electronics
MOSFET N-CH 100V 4.5A 8-SO / Trans MOSFET N-CH 100V 4.5A Automotive 8-Pin SOIC T/R
***emi
N-Channel PowerTrench® MOSFET 100V, 4.5A, 60mΩ
***ure Electronics
N-Channel 100 V 60 mOhm PowerTrench Mosfet SOIC-8
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS3692; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***Yang
Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ
***ure Electronics
FDS89161LZ Series 100 V 2.7 A 105 mOhm Dual N-Ch PowerTrench Mosfet - SOIC-8
***enic
100V 2.7A 105m´Î@10V2.7A 1.6W 2.2V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, N-CH, 100V, 2.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Source Voltage Vds:100V; On Resistance
***rchild Semiconductor
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
***nell
MOSFET, N-CH, 100V, 2.7A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
IRF7380PBF Dual N-channel MOSFET Transistor; 3.6 A; 80 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 80 V 73 mOhm 15 nC HEXFET® Power Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC Tube
*** Stop Electro
Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Di
***ineon
Benefits: RoHS Compliant; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design; Dual N-Channel MOSFET
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
***ponent Sense
Single N-Channel 100 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC Tube / MOSFET N-CH 100V 7.3A 8-SOIC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.3A; On Resistance Rds(On):0.018Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Бөлім № Mfg. Сипаттама Қор Бағасы
FDS3612
DISTI # FDS3612-ND		ON SemiconductorMOSFET N-CH 100V 3.4A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS3612
    DISTI # 512-FDS3612    		ON SemiconductorMOSFET SO-8
    RoHS: Compliant    		0
      FDS3612Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3.4A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		4809
      • 1000:$0.6100
      • 500:$0.6400
      • 100:$0.6600
      • 25:$0.6900
      • 1:$0.7500
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      		 Жаңа және түпнұсқа
      Қол жетімділік
      Қор:
      Available
      Тапсырыс бойынша:
      3500
      Саны енгізіңіз:
      FDS3612 ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
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