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IRFU13N20DPBF

IRFU13N20DPBF
Mfr. #:
IRFU13N20DPBF
Өндіруші:
Infineon Technologies
Сипаттама:
MOSFET MOSFT 200V 13A 235mOhm 25nC
Өміршеңдік кезең:
Осы өндірушіден жаңа.
Деректер тізімі:
IRFU13N20DPBF Деректер тізімі
Жеткізу:
DHL FedEx Ups TNT EMS
Төлем:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Көбірек ақпарат:
IRFU13N20DPBF Көбірек ақпарат
Өнім атрибуты
Төлсипат мәні
Өндіруші:
Infineon
Өнім санаты:
MOSFET
RoHS:
Y
Технология:
Си
Орнату стилі:
Тесік арқылы
Пакет/қорап:
TO-251-3
Арналар саны:
1 Channel
Транзистордың полярлығы:
N-арна
Vds - ағызу көзінің бұзылу кернеуі:
200 V
Идентификатор - үздіксіз төгу тогы:
13 A
Rds On - ағызу көзіне қарсылық:
235 mOhms
Vgs - Шлюз көзі кернеуі:
30 V
Qg - қақпа заряды:
25 nC
Ең төменгі жұмыс температурасы:
- 55 C
Максималды жұмыс температурасы:
+ 175 C
Pd - қуаттың шығыны:
110 W
Конфигурация:
Бойдақ
Арна режимі:
Жақсарту
Қаптама:
Түтік
Биіктігі:
6.22 mm
Ұзындығы:
6.73 mm
Транзистор түрі:
1 N-Channel
Ені:
2.38 mm
Бренд:
Infineon Technologies
Форвард өткізгіштік - Мин:
6.2 S
Күз уақыты:
10 ns
Өнім түрі:
MOSFET
Көтеру уақыты:
27 ns
Зауыттық буманың саны:
3000
Ішкі санат:
MOSFETs
Өшірудің әдеттегі кешігу уақыты:
17 ns
Қосудың әдеттегі кешігу уақыты:
11 ns
Бөлім # Бүркеншік аттар:
SP001573640
Бірлік салмағы:
0.139332 oz
Tags
IRFU13N, IRFU13, IRFU1, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
*** Source Electronics
Trans MOSFET N-CH 200V 17A 3-Pin(3+Tab) IPAK / MOSFET N-CH 200V 17A I-PAK
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***(Formerly Allied Electronics)
MOSFET, 200V, 17A, 165 MOHM, 27 NC QG, I-PAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):165mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes
***emi
N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
***r Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***(Formerly Allied Electronics)
IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK
***ineon SCT
-150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - IPAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***ark
Mosfet Transistor, N Channel, 10 A, 250 V, 0.32 Ohm, 10 V, 4.5 V
***emi
Single N-Channel Power MOSFET 250V, 10A, 420mΩ
***r Electronics
Small Signal Field-Effect Transistor, 10A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
N CHANNEL MOSFET, 250V, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 52W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
***et
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
N-Ch/200V/10A/qfet Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Бөлім № Mfg. Сипаттама Қор Бағасы
IRFU13N20DPBF
DISTI # V99:2348_13892676		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 9000:$0.3943
  • 3000:$0.4381
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 10:$0.8195
  • 1:$0.9259
IRFU13N20DPBF
DISTI # IRFU13N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 13A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5875In Stock
  • 1000:$0.5978
  • 500:$0.7572
  • 100:$0.9764
  • 10:$1.2350
  • 1:$1.3900
IRFU13N20DPBF
DISTI # 31335313		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 16:$0.8195
IRFU13N20DPBF
DISTI # 24161208		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		1980
  • 1000:$0.5136
  • 150:$0.6096
  • 22:$0.6720
IRFU13N20DPBF
DISTI # IRFU13N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU13N20DPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.4169
  • 6000:$0.4019
  • 12000:$0.3869
  • 18000:$0.3739
  • 30000:$0.3679
IRFU13N20DPBF
DISTI # IRFU13N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK (Alt: IRFU13N20DPBF)
RoHS: Compliant
Min Qty: 3000		Asia - 0
  • 3000:$0.4600
  • 6000:$0.4472
  • 9000:$0.4351
  • 15000:$0.4237
  • 30000:$0.4182
  • 75000:$0.4128
  • 150000:$0.4076
IRFU13N20DPBF
DISTI # 70018362		Infineon Technologies AGIRFU13N20DPBF N-channel MOSFET Module,13 A,200 V,3-Pin IPAK
RoHS: Compliant		0
  • 675:$1.4400
IRFU13N20DPBFInfineon Technologies AGSingle N-Channel 200 V 0.235 Ohm 38 nC HEXFET Power Mosfet - IPAK
RoHS: Compliant		2570Tube
  • 20:$0.5550
  • 200:$0.5000
  • 1000:$0.4250
IRFU13N20DPBF
DISTI # 942-IRFU13N20DPBF		Infineon Technologies AGMOSFET MOSFT 200V 13A 235mOhm 25nC
RoHS: Compliant		2828
  • 1:$1.1900
  • 10:$1.0200
  • 100:$0.7790
  • 500:$0.6890
  • 1000:$0.5440
IRFU13N20DPBF
DISTI # 8655847P		Infineon Technologies AGMOSFET N-CH 200V 13A HEXFET SMPS IPAK, TU445
  • 100:£0.5640
  • 250:£0.5310
  • 500:£0.4990
  • 1350:£0.3930
IRFU13N20DPBF
DISTI # C1S322000496783		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 10:$0.8195
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Қол жетімділік
Қор:
Available
Тапсырыс бойынша:
1986
Саны енгізіңіз:
IRFU13N20DPBF ағымдағы бағасы тек анықтама үшін берілген, егер сіз ең жақсы бағаны алғыңыз келсе, сату тобымызға [email protected] мекенжайына сұрауды немесе тікелей электрондық поштаны жіберіңіз.
Анықтамалық баға (USD)
Саны
Тауар өлшемінің бағасы
Қосымша. Бағасы
1
1,18 $
1,18 $
10
1,01 $
10,10 $
100
0,78 $
77,90 $
500
0,69 $
344,50 $
1000
0,54 $
544,00 $
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